公开(公告)号：US20210028315A1

公开(公告)日：2021-01-28

申请号：US16641078

申请日：2019-02-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhaohui QIANG ,  Feng GUAN ,  Zhi WANG ,  Yupeng GAO ,  Yang LYU ,  Chao LI ,  Jianhua DU ,  Lei CHEN

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L29/417

Abstract: The present disclosure provides a thin film transistor, a pixel structure, a display device, and a manufacturing method. The thin film transistor includes: a gate on the substrate; a gate insulating layer covering the gate and the substrate; a first support portion and a second support portion, which are provided on the gate insulating layer covering the substrate and located on both sides of the gate, wherein the first support portion is not connected to the second support portion; a semiconductor layer on the first support portion, the second support portion, and the gate insulating layer covering the gate; and a source and a drain respectively connected to the semiconductor layer. The first support portion and the second support portion are respectively configured to support the semiconductor layer.

公开(公告)号：US20210005769A1

公开(公告)日：2021-01-07

申请号：US16909526

申请日：2020-06-23

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chao LI ,  Jianhua DU ,  Feng GUAN ,  Yupeng GAO ,  Zhaohui QIANG ,  Zhi WANG ,  Yang LYU ,  Chao LUO

IPC: H01L31/105 ,  H01L27/12 ,  H01L31/12 ,  H01L31/18

Abstract: The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.