公开(公告)号：US20240387631A1

公开(公告)日：2024-11-21

申请号：US18273730

申请日：2022-05-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hao WU ,  Feng GUAN ,  Yang LV

IPC: H01L29/06 ,  H01L23/64 ,  H01L29/66 ,  H01L29/786

Abstract: The present disclosure provides a nanowire, a fabrication method of an array substrate, an array substrate and an electronic device, belongs to the field of semiconductor technology, and can solve the problem of large area of an active region. The fabrication method of the nanowire includes: forming an insulating layer on a first surface of the substrate; forming a trench layer having a guide trench on a surface of the insulating layer away from the substrate, wherein a width of the guide trench is 0.8 to 1.2 times of a diameter of an induction particle having a specified size; forming the induction particle in the guide trench; forming a precipitation layer on a surface of the trench layer away from the substrate; and forming the nanowire by processing the precipitation layer to separate specified atoms out in the precipitation layer along the guide trench under induction of the induction particle.

公开(公告)号：US20240379885A1

公开(公告)日：2024-11-14

申请号：US18032582

申请日：2022-05-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hao WU ,  Feng GUAN ,  Jianhua DU ,  Yang LV ,  Rui YAN ,  Meng ZHAO ,  Chaolu WANG

IPC: H01L31/0392 ,  H01L27/146 ,  H01L29/786

Abstract: The present disclosure provides a ray detector, a method for manufacturing a ray detector, and an electronic device. The method includes: forming a buffer layer on a first surface of a substrate, wherein the first surface of the substrate includes a first region and a second region; forming a shared layer on a surface of the buffer layer distal to the substrate; processing a portion of the shared layer in the first region to obtain an active layer of a thin film transistor; and processing a portion of the shared layer in the second region to obtain an absorption layer of a photodiode.

公开(公告)号：US20240347550A1

公开(公告)日：2024-10-17

申请号：US18755700

申请日：2024-06-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yang LV ,  Feng GUAN ,  Jianhua DU ,  Meng ZHAO ,  Hao WU ,  Chaolu WANG

IPC: H01L27/12

CPC classification number: H01L27/1251 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/127

Abstract: A method for preparing a driving backplane includes: providing a base substrate, forming a connecting layer on a side of the base substrate; forming an insulating layer group on a side of the connecting layer away from the base substrate, forming a first via hole by patterning the insulating layer group; forming inducing particles on a side of the insulating layer group away from the base substrate; forming a doped amorphous silicon layer on a side of the inducing particles away from the base substrate, forming a first conductor part by the doped amorphous silicon layer formed in the first via hole, forming a raw material part by patterning the doped amorphous silicon layer; and forming a first channel part by causing the inducing particles to induce the raw material part, wherein the first channel part is connected to the first conductor part.

公开(公告)号：US20240347541A1

公开(公告)日：2024-10-17

申请号：US18749666

申请日：2024-06-21

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jianhua DU ,  Jinxiang XUE ,  Xinhong LU ,  Yingwei LIU ,  Meng ZHAO ,  Hao WU ,  Feng GUAN ,  Yang LV ,  Chaolu WANG

IPC: H01L27/12 ,  H01L25/075 ,  H01L25/16 ,  H01L33/62

CPC classification number: H01L27/1218 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/1244 ,  H01L27/1262 ,  H01L33/62

Abstract: A driving backplane, a display device and preparation methods therefor are provided. The method includes: providing a base substrate with first, second surfaces and a side surface connected therebetween; forming a flexible film layer on the first surface, and patterning the flexible film layer to form a first opening portion including first, second and third parts sequentially connected; bending partial flexible film layer to the second surface, such that first, second and third parts are opposite to the first, side and second surfaces; forming a conductive layer on a side of the flexible film layer away from the base substrate by using the flexible film layer as a mask, the conductive layer being formed in at least a part of the first opening portion to form a conductive strip; and at least removing the flexible film layer and the conductive layer around the conductive strip.

公开(公告)号：US20210217909A1

公开(公告)日：2021-07-15

申请号：US16958120

申请日：2020-01-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianhua DU ,  Chao LI ,  Zhaohui QIANG ,  Yupeng GAO ,  Feng GUAN ,  Rui HUANG ,  Zhi WANG ,  Yang LV ,  Chao LUO

IPC: H01L31/0224 ,  H01L31/20 ,  H01L31/18 ,  H01L31/0376

Abstract: The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

公开(公告)号：US20220406820A1

公开(公告)日：2022-12-22

申请号：US17779327

申请日：2021-07-08

Applicant: BOE TECHNOLOGY GROUP CO.,LTD.

Inventor： Yang LV

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A thin film transistor includes a substrate and an active layer having a channel region. The active layer includes a first active pattern and at least one second active pattern. The first active pattern includes a bottom surface, a top surface and at least one side surface. The at least one side surface connects the bottom and top surfaces, and is in contact with the at least one second active pattern. A length direction of each side surface is approximately perpendicular to a length direction of the channel region. A material of at least the top surface of the first active pattern includes a first polysilicon material, and a material of the second active pattern includes a second polysilicon material; and in the length direction of the channel region, an average grain size of the first polysilicon material is greater than an average grain size of the second polysilicon material.

公开(公告)号：US20220115413A1

公开(公告)日：2022-04-14

申请号：US17263748

申请日：2020-03-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chao LUO ,  Feng GUAN ,  Zhi WANG ,  Jianhua DU ,  Yang LV ,  Zhaohui QIANG ,  Chao LI

IPC: H01L27/12

Abstract: A thin film transistor includes a gate, a gate insulating layer, an active layer, an ionized amorphous silicon layer, a source and a drain. The gate insulating layer covers the gate. The active layer is disposed on a side of the gate insulating layer away from the gate. The ionized amorphous silicon layer is disposed on a side of the active layer away from the gate, and the ionized amorphous silicon layer is in contact with the gate insulating layer. The source and the drain are disposed on a side of the ionized amorphous silicon layer away from the gate insulating layer, and the source and the drain are coupled to the active layer through the ionized amorphous silicon layer.