Abstract:
Single crystal material of needlelike form may be obtained by means of the vapor-liquid-solid crystal growth technique, growth parameters of the growing crystalline material being controlled so as to result in the removal of the impurity agent and the concomitant decrease in the volume of the liquid solution and growth of crystalline materials evidencing sharp terminations.
Abstract:
Epitaxial growth of Group III(a)-V(a) semiconductor compound films is effected in an ultrahigh vacuum by directing collimated molecular beams at the surface of a suitable substrate member preheated to a temperature ranging from 450*-650* C. The described process is a nonequilibrium growth technique which permits the growth of epitaxial films less than 1 micron in thickness at temperatures appreciably below those commonly employed in epitaxy.