公开(公告)号：US20220298637A1

公开(公告)日：2022-09-22

申请号：US17616736

申请日：2020-05-27

Applicant: BASF SE ,  Wayne State University

Inventor： Sinja Verena KLENK ,  David Dominique SCHWEINFURTH ,  Lukas MAYR ,  Sabine WEIGUNY ,  Charles Winter ,  Nilanka WEERATHUNGA SIRIKKATHUGE ,  Tharindu KARUNARATNE

IPC: C23C16/455 ,  C07F5/06

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), or (III) in the gaseous state (I) (II) (III) wherein A is NR, NR2, PR, PR2, O, OR, S, or SR, E is N, NR, P, PR, O or S, n is 1, 2, or 3, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, and A, E, and n are chosen such that the compound of general formula (I), (II), or (III) is electronically neutral.

公开(公告)号：US20210262091A1

公开(公告)日：2021-08-26

申请号：US17251250

申请日：2019-06-04

Applicant: BASF SE

Inventor： David Dominique SCHWEINFURTH ,  Sabine WEIGUNY ,  Lukas MAYR ,  Sinja Verena KLENK

IPC: C23C16/455 ,  C07F17/00 ,  C23C16/08 ,  C23C16/56

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. The present invention relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semi-metal-containing compound in contact with a compound of general formula (Ia), (Ib), (Ic), (Id) or (Ie), wherein E is Ti, Zr, Hf, V, Nb, or Ta, L1 and L2 is a pentadienyl or a cyclopentadienyl ligand, and X1 and X2 is nothing or a neutral ligand, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R20, R21, R22, R23, R24, R25, and R26 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein for compound (Ia), at least one of R1 to R10 contains at least one carbon and/or silicon atom and A is an alkyl group, an alkenyl group, an aryl group or a silyl group.

公开(公告)号：US20220298638A1

公开(公告)日：2022-09-22

申请号：US17616751

申请日：2020-05-27

Applicant: BASF SE ,  Wayne State University

Inventor： Sinja Verena KLENK ,  David Dominique SCHWEINFURTH ,  Lukas MAYR ,  Sabine WEIGUNY ,  Charles WINTER ,  Nilanka WEERATHUNGA SIRIKKATHUGE

IPC: C23C16/455 ,  C07F5/06

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), (III), (IV), (V), (VI), or (VII) in the gaseous state (I) (II) (III) (IV) . . . (V) (VI) (VII) wherein A is NR or O, E is CR″, CNR″2, N, PR″2, or SOR″, G is CR′ or N, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R′ and R″ are hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US20210324516A1

公开(公告)日：2021-10-21

申请号：US17259666

申请日：2019-07-04

Applicant: BASF SE

Inventor： David Dominique SCHWEINFURTH ,  Lukas MAYR ,  Sinja Verena KLENK ,  David SCHESCHKEWITZ ,  Kinga Izabela LESZCZYNSKA

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/34 ,  C23C16/32 ,  C23C16/36

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with compound of general formula (II), (III), or (IV), wherein E is Ge or Sn, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, R′ are an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is nothing, hydrogen, a halide, an alkyl group, an alkylene group, an aryl group, an alkoxy group, an aryl oxy group, an amino group, or a amidinate group, or an guanidinate group, L is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US20210387156A1

公开(公告)日：2021-12-16

申请号：US17290669

申请日：2019-10-29

Applicant: BASF SE

Inventor： Bernd Dieter OSCHMANN ,  Kerstin MUELHEIMS ,  Wolfgang KRAUSE ,  Patrick LEIBACH ,  Roland Hinrich STAFF ,  Dieter FLICK ,  Lukas MAYR ,  Stephanie RENZ ,  Felicitas GUTH ,  Klaus KAHLE ,  Stephan HUEFFER ,  Tobias Maximilian MERKEL ,  Axel BINDER ,  Karl KOLTER ,  Yean Yik GEOERG ,  Regina VOGELSANG ,  Antoine Maxime Charles Jos BEZIAU

IPC: B01J13/20 ,  B01J13/22

Abstract: The present invention relates to processes for producing microparticles having, in their interior, at least one cavity which is connected via pores to the surface of the microparticles and which have been laden with at least one organic active of low molecular weight. The invention especially relates to a process for loading microparticles with at least one organic active of low molecular weight, wherein the active has been embedded in a matrix and/or the pores of the microparticles have been closed by means of a substance applied to the surface of the microparticles. The invention additionally relates to a process for sealing microparticles laden with at least one organic active of low molecular weight. The invention also relates to compositions of microparticles laden with at least one active of low molecular weight and to the use thereof.

公开(公告)号：US20190309417A1

公开(公告)日：2019-10-10

申请号：US16338915

申请日：2017-10-18

Applicant: BASF SE

Inventor： Maraike AHLF ,  David Dominique SCHWEINFURTH ,  Lukas MAYR ,  Kinga Izabela LESZCZYNSKA ,  David SCHESCHKEWITZ

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/38 ,  C23C16/40

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising depositing the compound of general formula (I) onto a solid substrate, wherein R1, R2, R3, R4, and R5 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R1, R2, R3, R4, and R5 are hydrogen, X is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2.