公开(公告)号：US07670930B2

公开(公告)日：2010-03-02

申请号：US12293193

申请日：2007-03-28

申请人： Aurélie Tauzin ,  Bruce Faure ,  Arnaud Garnier

发明人： Aurélie Tauzin ,  Bruce Faure ,  Arnaud Garnier

IPC分类号： H01L21/46 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76254

摘要： A method of fabricating a thin film from a substrate includes implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate. The method optionally further including intimate contacting of this face of the substrate with a stiffener, and detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase.

摘要翻译： 从衬底制造薄膜的方法包括将诸如由非气态物质的离子（例如镓）注入衬底中，例如由硅制成的衬底，根据材料选择植入条件和该物种 底物，以便允许形成限定在一定深度内的析出物，分布在层内，这些沉淀物由熔点低于基底的固相制成。 所述方法还可包括将基材的该表面与加强件紧密接触，以及通过在沉淀物处于其中的条件下施加机械和/或化学脱离应力而在沉淀层处破碎基板而分离薄膜 液相。

公开(公告)号：US20090061594A1

公开(公告)日：2009-03-05

申请号：US12293193

申请日：2007-03-28

申请人： Aurelie Tauzin ,  Bruce Faure ,  Arnaud Garnier

发明人： Aurelie Tauzin ,  Bruce Faure ,  Arnaud Garnier

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： A method of fabricating a thin film from a substrate includes implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate. The method optionally further including intimate contacting of this face of the substrate with a stiffener, and detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase.

摘要翻译： 从衬底制造薄膜的方法包括将诸如由非气态物质的离子（例如镓）注入衬底中，例如由硅制成的衬底，根据材料选择植入条件和该物种 底物，以便允许形成限定在一定深度内的析出物，分布在层内，这些沉淀物由熔点低于基底的固相制成。 所述方法还可包括将基材的该表面与加强件紧密接触，以及通过在沉淀物处于其中的条件下施加机械和/或化学脱离应力而在沉淀层处破碎基板而分离薄膜 液相。

公开(公告)号：US08093686B2

公开(公告)日：2012-01-10

申请号：US12672819

申请日：2008-09-01

申请人： Arnaud Garnier

发明人： Arnaud Garnier

IPC分类号： H01L29/20

CPC分类号： H01L21/76254 ,  H01L33/0079

摘要： A process for obtaining a hybrid substrate that includes at least one active layer of Group III/N material for applications in the field of electronics, optics, photovoltaics or optoelectronics. The method includes selecting a source substrate of Group III/N material having a hexagonal single crystal crystallographic structure; carrying out an implantation of He+ helium ions into the source substrate through an implantation face which lies in a plane approximately parallel with the “c” crystallographic axis of the material, at an implantation dose equal to or greater than 1×1016 He+/cm2 and 1×1017 He+/cm2, to form therein a number of nanocavities defining a weakened zone which delimits the active layer; and transferring the active layer by applying an overall energy budget capable of causing detachment of the layer from the source substrate, wherein the budget also causes the nanocavities to grow into cavities.

摘要翻译： 一种用于获得混合基板的方法，该混合基板包括用于电子，光学，光伏或光电领域领域的III / N族材料的至少一个有源层。 该方法包括选择具有六方晶单晶晶体结构的III / N族材料的源极衬底; 通过位于与材料的“c”结晶轴大致平行的平面中的注入面，以等于或大于1×10 16 He + / cm 2的注入剂量，将He +氦离子注入到源衬底中，并且 1×1017 He + / cm 2，以在其中形成限定限定活性层的弱化区的许多纳米孔; 并且通过施加能够使得所述层与所述源极基板分离的总能量预算来转移所述有源层，其中所述预算还导致所述纳米空间生长到空腔中。

公开(公告)号：US20110095400A1

公开(公告)日：2011-04-28

申请号：US12672819

申请日：2008-09-01

申请人： Arnaud Garnier

发明人： Arnaud Garnier

IPC分类号： H01L29/20 ,  H01L21/30

CPC分类号： H01L21/76254 ,  H01L33/0079

摘要： A process for obtaining a hybrid substrate that includes at least one active layer of Group III/N material for applications in the field of electronics, optics, photovoltaics or optoelectronics. The method includes selecting a source substrate of Group III/N material having a hexagonal single crystal crystallographic structure; carrying out an implantation of He+ helium ions into the source substrate through an implantation face which lies in a plane approximately parallel with the “c” crystallographic axis of the material, at an implantation dose equal to or greater than 1×1016 He+/cm2 and 1×1017 He+/cm2, to form therein a number of nanocavities defining a weakened zone which delimits the active layer; and transferring the active layer by applying an overall energy budget capable of causing detachment of the layer from the source substrate, wherein the budget also causes the nanocavities to grow into cavities.

摘要翻译： 一种用于获得混合基板的方法，该混合基板包括用于电子，光学，光伏或光电领域领域的III / N族材料的至少一个有源层。 该方法包括选择具有六方晶单晶晶体结构的III / N族材料的源极衬底; 通过位于与材料的“c”结晶轴大致平行的平面中的注入面，以等于或大于1×10 16 He + / cm 2的注入剂量，将He +氦离子注入到源衬底中，并且 1×1017 He + / cm 2，以在其中形成限定限定活性层的弱化区的许多纳米孔; 并且通过施加能够使得所述层与所述源极基板分离的总能量预算来转移所述有源层，其中所述预算还导致所述纳米空间生长成空腔。