公开(公告)号：US20240191353A1

公开(公告)日：2024-06-13

申请号：US18077225

申请日：2022-12-07

Applicant: Applied Materials, Inc.

Inventor： Yoon Ah Shin ,  Bencherki Mebarki ,  Joung Joo Lee ,  Xianmin Tang ,  Thai Cheng Chua ,  Christian W. Valencia

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02

CPC classification number: C23C16/45536 ,  H01J37/32192 ,  H01L21/02057

Abstract: Embodiments of the disclosure relate to methods for reducing metal oxide layers to pure metal using microwave radiation. Specific embodiments provide methods of reducing a native metal oxide on a metal interconnect within a substrate feature comprising dielectric sidewalls. In some embodiments, surrounding dielectric materials are undamaged by the disclosed processes.

公开(公告)号：US20250022750A1

公开(公告)日：2025-01-16

申请号：US18753020

申请日：2024-06-25

Applicant: Applied Materials, Inc.

Inventor： Shinjae Hwang ,  Yoon Ah Shin ,  Feng Chen ,  Bencherki Mebarki ,  Joung Joo Lee ,  Xianmin Tang

IPC: H01L21/768

Abstract: Embodiments of the disclosure provide methods of forming interconnect structures in the manufacture of microelectronic devices. In one or more embodiments, microelectronic devices described herein comprise at least one top interconnect structure that is interconnected to at least one bottom interconnect structure. Embodiments of the disclosure relate to methods of improving barrier layer and metal liner properties in the interconnect structures without increasing capacitance and/or damaging other layers. In some embodiments, the barrier layer is treated with microwave radiation. The treatment process can be implemented in a processing tool including a modular high-frequency emission source.