公开(公告)号：US20220328354A1

公开(公告)日：2022-10-13

申请号：US17847419

申请日：2022-06-23

Applicant: Applied Materials, Inc.

Inventor： Peng SUO ,  Ying W. WANG ,  Guan Huei SEE ,  Chang Bum YONG ,  Arvind SUNDARRAJAN

IPC: H01L21/768 ,  H01L21/308 ,  H01L21/288 ,  H01L21/285 ,  H01L21/306

Abstract: The present disclosure relates to through-via structures with dielectric shielding of interconnections for advanced wafer level semiconductor packaging. The methods described herein enable the formation of high thickness dielectric shielding layers within low aspect ratio through-via structures, thus facilitating thin and small-form-factor package structures having high I/O density with improved bandwidth and power.

公开(公告)号：US20240412948A1

公开(公告)日：2024-12-12

申请号：US18330687

申请日：2023-06-07

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Ruiping WANG ,  Raymond Hoiman HUNG ,  Ying W. WANG ,  Ke ZHENG

IPC: H01J37/32

Abstract: Embodiments of the disclosure provided herein include a system and method for plasma cleaning and activation using hybrid bonding. The system includes a processing chamber, a substrate support configured to support a substrate during hybrid bonding substrate processing, a gas delivery system coupled to the processing chamber having at least one radical generator, and a controller configured to cause the substrate processing system to form a first layer on a first substrate, dissociate a gas in the at least one radical generator to form a plasma, flow the plasma into the processing volume of the processing chamber for a period of time, exhaust the plasma, by products, and effluent gas from the processing volume after the period of time, and adhere a second layer disposed on a second substrate onto the first layer using a hybrid bonding technique.

公开(公告)号：US20240390950A1

公开(公告)日：2024-11-28

申请号：US18200539

申请日：2023-05-22

Applicant: Applied Materials, Inc.

Inventor： Ke ZHENG ,  Guan Huei SEE ,  Ying W. WANG ,  Ruiping WANG ,  Prayudi LIANTO

IPC: B08B1/00 ,  B08B1/02 ,  B08B3/02

Abstract: A brush box cleaning module is introduced as part of the pre-treatment process flow in an integrated hybrid bonding platform. It addresses the technical problem of achieving high cleanliness levels on die front-side and back-side surfaces, particularly by removing residues and particles induced by backgrinding tape and dicing tape. The brush box cleaning module efficiently removes stubborn residues and particles both chemically and mechanically, resulting in a clean and passivated surface without causing watermarks, scratches, corrosion, or surface roughness. This disclosed approach enhances the bonding yield and provides significant advantages over existing methods in die-stack hybrid bonding applications.

公开(公告)号：US20240087958A1

公开(公告)日：2024-03-14

申请号：US18508801

申请日：2023-11-14

Applicant: Applied Materials, Inc.

Inventor： Peng SUO ,  Ying W. WANG ,  Guan Huei SEE ,  Chang Bum YONG ,  Arvind SUNDARRAJAN

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/288 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L21/76898 ,  H01L21/2855 ,  H01L21/288 ,  H01L21/30625 ,  H01L21/308

Abstract: The present disclosure relates to through-via structures with dielectric shielding of interconnections for advanced wafer level semiconductor packaging. The methods described herein enable the formation of high thickness dielectric shielding layers within low aspect ratio through-via structures, thus facilitating thin and small-form-factor package structures having high I/O density with improved bandwidth and power.

公开(公告)号：US20220165621A1

公开(公告)日：2022-05-26

申请号：US16953869

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Peng SUO ,  Ying W. WANG ,  Guan Huei SEE ,  Chang Bum YONG ,  Arvind SUNDARRAJAN

IPC: H01L21/768 ,  H01L21/308 ,  H01L21/306 ,  H01L21/285 ,  H01L21/288

Abstract: The present disclosure relates to through-via structures with dielectric shielding of interconnections for advanced wafer level semiconductor packaging. The methods described herein enable the formation of high thickness dielectric shielding layers within low aspect ratio through-via structures, thus facilitating thin and small-form-factor package structures having high I/O density with improved bandwidth and power.