公开(公告)号：US20170092494A1

公开(公告)日：2017-03-30

申请号：US15377629

申请日：2016-12-13

Applicant: Applied Materials, Inc.

Inventor： Ying ZHANG ,  Uday MITRA ,  Praburam GOPALRAJA ,  Srinivas D. NEMANI ,  Hua CHUNG

IPC: H01L21/033 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L21/0332 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816

Abstract: The present disclosure provides forming nanostructures with precision dimension control and minimum lithographic related errors for features with dimension under 14 nanometers and beyond. A self-aligned multiple spacer patterning (SAMSP) process is provided herein and the process utilizes minimum lithographic exposure process, but rather multiple deposition/etching process to incrementally reduce feature sizes formed in the mask along the manufacturing process, until a desired extreme small dimension nanostructures are formed in a mask layer.

公开(公告)号：US20150371852A1

公开(公告)日：2015-12-24

申请号：US14730194

申请日：2015-06-03

Applicant: Applied Materials, Inc.

Inventor： Ying ZHANG ,  Uday MITRA ,  Praburam GOPALRAJA ,  Srinivas D. NEMANI ,  Hua CHUNG

IPC: H01L21/033 ,  H01L21/768 ,  H01L21/311 ,  H01L23/528

CPC classification number: H01L21/0332 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816

Abstract: The present disclosure provides forming nanostructures with precision dimension control and minimum lithographic related errors for features with dimension under 14 nanometers and beyond. A self-aligned multiple spacer patterning (SAMSP) process is provided herein and the process utilizes minimum lithographic exposure process, but rather multiple deposition/etching process to incrementally reduce feature sizes formed in the mask along the manufacturing process, until a desired extreme small dimension nanostructures are formed in a mask layer.

Abstract translation: 本公开提供形成具有尺寸在14纳米以下的特征的精确尺寸控制和最小光刻相关误差的纳米结构。 本文提供了自对准多间隔图案（SAMSP）工艺，并且该工艺利用最小光刻曝光工艺，而是采用多次沉积/蚀刻工艺来逐渐减小沿制造工艺在掩模中形成的特征尺寸，直到期望的极小尺寸 在掩模层中形成纳米结构。