公开(公告)号：US20190090338A1

公开(公告)日：2019-03-21

申请号：US15710667

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Travis Lee KOH ,  Haitao WANG ,  Philip Allan KRAUS ,  Vijay D. PARKHE ,  Daniel DISTASO ,  Christopher A. ROWLAND ,  Mark MARKOVSKY ,  Robert CASANOVA

IPC: H05H1/34 ,  H05B7/18 ,  H02N13/00

Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.

公开(公告)号：US20190088521A1

公开(公告)日：2019-03-21

申请号：US15710763

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng CHUA ,  Philip Allan KRAUS ,  Travis Lee KOH ,  Christian AMORMINO ,  Jaeyong CHO

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  C23C16/511 ,  C23C16/505 ,  C23C16/458 ,  C23C16/455

Abstract: The present disclosure generally relates to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide independent pulses of DC voltage through a switching system to electrodes disposed through the ESC substrate support, or to electrodes disposed on a surface of the ESC, or to electrodes embedded in the ESC substrate support. The switching system can independently alter the frequency and duty cycle of the pulsed DC voltage that is coupled to each electrode. During processing of the substrate, the process rate, such as etch rate or deposition rate, can be controlled independently in regions of the substrate because the process rate is a function of the frequency and duty cycle of the pulsed DC voltage. The processing uniformity of the process performed on the substrate is improved.

公开(公告)号：US20190088518A1

公开(公告)日：2019-03-21

申请号：US15710683

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Travis Lee KOH ,  Philip Allan KRAUS ,  Wonseok LEE

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  C23C16/511 ,  C23C16/458 ,  C23C16/505 ,  C23C16/455

Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.