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公开(公告)号：US20190090338A1
公开(公告)日：2019-03-21
申请号：US15710667
申请日：2017-09-20
Applicant: Applied Materials, Inc.
Inventor： Travis Lee KOH , Haitao WANG , Philip Allan KRAUS , Vijay D. PARKHE , Daniel DISTASO , Christopher A. ROWLAND , Mark MARKOVSKY , Robert CASANOVA
Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.
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