公开(公告)号：US11898236B2

公开(公告)日：2024-02-13

申请号：US17506075

申请日：2021-10-20

Applicant: Applied Materials, Inc.

Inventor： Zhiyong Wang ,  Halbert Chong ,  John C. Forster ,  Irena H. Wysok ,  Tiefeng Shi ,  Gang Fu ,  Renu Whig ,  Keith A Miller ,  Sundarapandian Ramalinga Vijayalakshmi Reddy ,  Jianxin Lei ,  Rongjun Wang ,  Tza-Jing Gung ,  Kirankumar Neelasandra Savandaiah ,  Avinash Nayak ,  Lei Zhou

IPC: C23C14/34 ,  H01J37/32 ,  C23C14/50

CPC classification number: C23C14/345 ,  C23C14/3485 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32174 ,  C23C14/50

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

公开(公告)号：US12176190B2

公开(公告)日：2024-12-24

申请号：US18118543

申请日：2023-03-07

Applicant: Applied Materials, Inc.

Inventor： Tiefeng Shi ,  Gang Fu ,  Keith A. Miller

IPC: H01J37/32 ,  G06N3/09

Abstract: Methods, apparatuses and systems for detecting and managing arc events during a plasma chamber process include receiving impedance data measured during a plasma chamber process, analyzing the impedance data to determine if an arc event is occurring during the plasma chamber process, and if it is determined that an arc event is occurring, an action is taken to suppress an arc of the arc event. In some instances, a machine learning model that has been trained to recognize when an arc event is occurring from received measurement data is used to determine if an arc event is occurring.

公开(公告)号：US11676801B2

公开(公告)日：2023-06-13

申请号：US17333873

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Tiefeng Shi ,  Keith A. Miller ,  Gang Fu

IPC: H03H7/40 ,  H01J37/32 ,  H01L21/02 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H01J37/32146 ,  H01L21/02266 ,  H03H7/383

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network for use with a plasma processing chamber comprises an input configured to connect to a power source, an output configured to connect to the plasma processing chamber, a V/I sensor connected between the input of the matching network and an output of the power source, a load capacitor connected in parallel with at least one capacitor connected in series with a load switch, a tuning capacitor connected in series with at least one capacitor connected in parallel with a tuning switch, and a multiple level pulsing phase/magnitude module connected to the V/I sensor and to a multiple level pulsing synchronization switch driver connected to each of the load switch and the tuning switch for activating at least one of the load switch and the tuning switch in response to a control signal, which is based on a V/I sensor measurement, received from the power source.