公开(公告)号：US20140190632A1

公开(公告)日：2014-07-10

申请号：US14050224

申请日：2013-10-09

Applicant: Applied Materials, Inc.

Inventor： Ajay KUMAR ,  Madhavi CHANDRACHOOD ,  Scott Alan ANDERSON ,  Peter SATITPUNWAYCHA ,  Wai-Fan YAU

IPC: H01J37/32

CPC classification number: H01J37/32651 ,  G03F1/80 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32871 ,  H01J2237/0225

Abstract: A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber having a substrate support pedestal adapted to receive a photomask substrate thereon. An ion-radical shield is disposed above the pedestal. A substrate is placed upon the pedestal beneath the ion-radical shield. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield.

Abstract translation: 本文提供了蚀刻光掩模的方法和设备。 在一个实施例中，蚀刻光掩模的方法包括提供具有适于在其上接收光掩模基板的基板支撑基座的处理室。 离子基屏蔽设置在基座上方。 将衬底放置在离子基屏蔽下方的基座上。 工艺气体被引入到处理室中，并且从处理气体形成等离子体。 基底主要用通过屏蔽的自由基进行蚀刻。