公开(公告)号：US20180342395A1

公开(公告)日：2018-11-29

申请号：US15988820

申请日：2018-05-24

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond HUNG ,  Namsung KIM ,  Srinivas NEMANI ,  Ellie YIEH ,  Jong CHOI ,  Christopher AHLES ,  Andrew KUMMEL

IPC: H01L21/285 ,  H01L21/324

CPC classification number: H01L21/28518 ,  H01L21/28562 ,  H01L21/324

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate.

公开(公告)号：US20190371650A1

公开(公告)日：2019-12-05

申请号：US16407510

申请日：2019-05-09

Applicant: Applied Materials, Inc.

Inventor： Shiyu SUN ,  Keith Tatseun WONG ,  Kurtis LESCHKIES ,  Namsung KIM ,  Srinivas NEMANI

IPC: H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/306 ,  H01L21/324

Abstract: Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure is oxidized by a high pressure oxidation process to form a buried oxide layer adjacent the substrate.

公开(公告)号：US20190103278A1

公开(公告)日：2019-04-04

申请号：US16189429

申请日：2018-11-13

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond HUNG ,  Namsung KIM ,  Srinivas D. NEMANI ,  Ellie Y. YIEH ,  Jong CHOI ,  Christopher AHLES ,  Andrew KUMMEL

IPC: H01L21/285 ,  H01L21/311 ,  H01L21/324 ,  C23C16/42 ,  C23C16/455 ,  C23C16/46

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate. Methods described herein also provide for selective native oxide removal which enables removal of native oxide material without etching bulk oxide materials.