公开(公告)号：US09721820B2

公开(公告)日：2017-08-01

申请号：US14336650

申请日：2014-07-21

申请人： Applied Materials, Inc.

发明人： Michael S. Cox ,  Michel Anthony Rosa

IPC分类号： H01L21/683 ,  H01L21/677

CPC分类号： H01L21/6831 ,  H01L21/67742

摘要： Embodiments of the present invention provide an end effector capable of generating an electrostatic chucking force to chuck a substrate disposed therein without damaging the substrate. In one embodiment, an end effector for a robot, the end effector includes a body having an electrostatic chucking force generating assembly, and a mounting end coupled to the body, the mounting end for coupling the body to the robot.

公开(公告)号：US09484199B2

公开(公告)日：2016-11-01

申请号：US14459357

申请日：2014-08-14

申请人： Applied Materials, Inc.

发明人： Hyo-In Chi ,  Farzad Dean Tajik ,  Michel Anthony Rosa

IPC分类号： H05H1/24 ,  H01L21/02 ,  C23C16/02 ,  C23C16/42

CPC分类号： H01L21/0262 ,  C23C16/0272 ,  C23C16/42 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02579

摘要： Embodiments of the present invention generally relate to methods for forming a SiGe layer. In one embodiment, a seed SiGe layer is first formed using plasma enhanced chemical vapor deposition (PECVD), and a bulk SiGe layer is formed directly on the PECVD seed layer also using PECVD. The processing temperature for both seed and bulk SiGe layers is less than 450 degrees Celsius.

摘要翻译： 本发明的实施方案一般涉及形成SiGe层的方法。 在一个实施例中，首先使用等离子体增强化学气相沉积（PECVD）形成种子SiGe层，并且还使用PECVD直接在PECVD晶种层上形成体SiGe层。 种子和体积SiGe层的处理温度低于450摄氏度。