公开(公告)号：US20230113961A1

公开(公告)日：2023-04-13

申请号：US18081276

申请日：2022-12-14

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Komal S. Garde ,  Kishor Kalathiparambil ,  Joung Joo Lee ,  Xianmin Tang

IPC: C23C14/34 ,  H01J37/34 ,  H01J37/32 ,  C23C14/14 ,  C23F4/00 ,  C23C14/54

Abstract: Embodiments of the disclosure relate to methods for enlarging the opening width of substrate features by reducing the overhang of deposited films. Some embodiments of the disclosure utilize a high power bias pulse to etch the deposited film near the opening of the substrate feature. Some embodiments of the disclosure etch the deposited film without damaging the underlying substrate.

公开(公告)号：US20210391176A1

公开(公告)日：2021-12-16

申请号：US16902918

申请日：2020-06-16

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Komal S. Garde ,  Kishor Kalathiparambil ,  Joung Joo Lee ,  Xianmin Tang

IPC: H01L21/285 ,  H01L21/3213 ,  H01J37/34 ,  C23C14/35 ,  C23C14/18

Abstract: Embodiments of the disclosure relate to methods for enlarging the opening width of substrate features by reducing the overhang of deposited films. Some embodiments of the disclosure utilize a highly energetic bias pulse to etch the deposited film near the opening of the substrate feature. Some embodiments of the disclosure etch the deposited film without damaging the underlying substrate.