公开(公告)号：US20240219337A1

公开(公告)日：2024-07-04

申请号：US18604257

申请日：2024-03-13

Applicant: Applied Materials, Inc.

Inventor： XIAOPU LI ,  KALLOL BERA ,  YAOLING PAN ,  KELVIN CHAN ,  AMIR BAYATI ,  PHILIP ALLAN KRAUS ,  KENRIC T. CHOI ,  WILLIAM JOHN DURAND

IPC: G01N27/22 ,  C23C16/455 ,  C23C16/52 ,  G01N33/00 ,  H01L21/67

CPC classification number: G01N27/22 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/52 ,  G01N33/0027 ,  H01L21/67017 ,  H01L21/67253

Abstract: Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.

公开(公告)号：US20240274414A1

公开(公告)日：2024-08-15

申请号：US18404391

申请日：2024-01-04

Applicant: Applied Materials, Inc.

Inventor： NEELA AYALASOMAYAJULA ,  KELVIN CHAN ,  VENUGOPAL VELLANKI ,  NIRANJANA BALESAN ,  ANDREW CONSTANT ,  NASREEN CHOPRA

IPC: H01J37/32 ,  G03F7/00

CPC classification number: H01J37/32862 ,  G03F7/70925 ,  H01J37/32449 ,  H01J2237/184

Abstract: Embodiments disclosed herein include a method of cleaning a chamber. In an embodiment, the method comprises flowing a first processing gas into the chamber, where the first processing gas reacts with a metal-organic compound in the chamber to form a first volatile compound. In an embodiment, the method further comprises flowing a second processing gas into the chamber, where the second processing gas reacts with a pure metal of the metal-organic compound to form a second volatile compound. In an embodiment, the method further comprises removing the first volatile compound and the second volatile compound from the chamber.

公开(公告)号：US20240027916A1

公开(公告)日：2024-01-25

申请号：US18198073

申请日：2023-05-16

Applicant: Applied Materials, Inc.

Inventor： RUIYING HAO ,  TODD EGAN ,  EDWARD BUDIARTO ,  PAOLA DE CECCO ,  REGINA FREED ,  BEKELE WORKU ,  MADHUR SACHAN ,  LUISA BOZANO ,  KELVIN CHAN

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70491 ,  G03F7/70653 ,  G03F7/706843 ,  G03F7/70808 ,  G03F7/7085

Abstract: Embodiments disclosed herein include a method of monitoring a photoresist deposition process. In an embodiment, the method comprises depositing a photoresist layer to a first thickness over a substrate, measuring a property of the photoresist layer with a first electromagnetic (EM) radiation source, depositing the photoresist layer to a second thickness over the substrate, and measuring the property of the photoresist layer with the first EM radiation source.

公开(公告)号：US20240128061A1

公开(公告)日：2024-04-18

申请号：US18233760

申请日：2023-08-14

Applicant: Applied Materials, Inc.

Inventor： FARZAD HOUSHMAND ,  KELVIN CHAN ,  RUIYING HAO ,  WAYNE FRENCH

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32357 ,  H01J37/32449 ,  H01J2237/20214 ,  H01J2237/334

Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a pedestal, an annular separator over the pedestal to define a first domain within the annular separator and a second domain outside of the annular separator, a first gas inlet within the annular separator, and a second gas inlet outside of the annular separator.

公开(公告)号：US20230064100A1

公开(公告)日：2023-03-02

申请号：US17869412

申请日：2022-07-20

Applicant: Applied Materials, Inc.

Inventor： KELVIN CHAN ,  RUIYING HAO

IPC: C23F1/44 ,  C23C16/455

Abstract: Embodiments disclosed herein include methods for removing a metal containing layer from a chamber of a tool. In an embodiment, the method comprises generating a remote plasma in the tool. The method may continue with flowing reactive species from the remote plasma into the chamber, and flowing a hydrocarbon gas into the chamber. In an embodiment, the method may include reacting the reactive species with the hydrocarbon gas within the chamber. In an embodiment, the method may further comprise etching the metal-containing material in the chamber.