公开(公告)号：US20220216058A1

公开(公告)日：2022-07-07

申请号：US17142626

申请日：2021-01-06

申请人： Applied Materials, Inc.

发明人： Jialiang Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC分类号： H01L21/285 ,  H01L23/532

摘要： Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.

公开(公告)号：US20230335402A1

公开(公告)日：2023-10-19

申请号：US17659350

申请日：2022-04-15

申请人： Applied Materials, Inc.

发明人： Eswaranand Venkatasubramanian ,  Rajaram Narayanan ,  Pramit Manna ,  Abhijit B. Mallick ,  Karthik Janakiraman ,  Jialiang Wang

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/26 ,  C23C16/56 ,  C23C16/505

CPC分类号： H01L21/0337 ,  H01L21/0332 ,  H01L21/31144 ,  H01J37/32449 ,  H01J37/32357 ,  C23C16/26 ,  C23C16/56 ,  C23C16/505 ,  H01J2237/3321

摘要： A method of processing a substrate is provided including flowing a deposition gas comprising a hydrocarbon compound and a dopant compound into a process volume having a substrate disposed positioned on a substrate support. The process volume is maintained at a pressure of about 0.5 mTorr to about 10 mTorr. The method includes generating a plasma at the substrate by applying a first RF bias to the substrate support to deposit a doped diamond-like carbon film on the substrate. The doped diamond-like carbon film includes about 5 at. % to about 25 at. % of dopant and a first stress property. The method includes annealing the doped diamond-like carbon film at about 220° C. to about 450° C. to form an annealed film. The annealed film includes a second stress property. The second stress property having an absolute value less than or within 10% the first stress property.

公开(公告)号：US20230056280A1

公开(公告)日：2023-02-23

申请号：US17974859

申请日：2022-10-27

申请人： Applied Materials, Inc.

发明人： Jialiang Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC分类号： H01L21/285 ,  H01L23/532 ,  C23C16/26 ,  C01B32/184 ,  C23C16/455 ,  H01L21/02

摘要： Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.

公开(公告)号：US11515163B2

公开(公告)日：2022-11-29

申请号：US17142626

申请日：2021-01-06

申请人： Applied Materials, Inc.

发明人： Jialiang Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC分类号： H01L21/285 ,  H01L23/532 ,  C23C16/26 ,  C01B32/184 ,  C23C16/455 ,  H01L21/02

摘要： Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.