公开(公告)号：US20250006518A1

公开(公告)日：2025-01-02

申请号：US18753006

申请日：2024-06-25

Applicant: Applied Materials, Inc.

Inventor： Shiyu YUE ,  Wei LEI ,  Yu LEI ,  Ju Hyun OH ,  Zhimin QI ,  Sahil Jaykumar PATEL ,  Yi XU ,  Aixi ZHANG ,  Bingqian LIU ,  Cong TRINH ,  Xianmin TANG ,  Hayrensa ABLAT

IPC: H01L21/67 ,  H01L21/321 ,  H01L21/768 ,  H01L23/532

Abstract: Embodiments herein relate to a method, semiconductor device structures, and multi-chamber processing system for exposing a semiconductor device structure to an oxidizing plasma to form an oxide layer on at least one electrical connection formed in at least one feature formed within a dielectric layer of the semiconductor device structure, performing an etch process to remove the oxide layer and form an etch recess between a portion of the electrical connection and the dielectric layer At least a portion of the etch recess extends underneath at least a portion of the dielectric layer, and filling the at least one feature and the etch recess with a metal material.