公开(公告)号：US20080075880A1

公开(公告)日：2008-03-27

申请号：US11527158

申请日：2006-09-26

Applicant: Anthony Renau ,  Vikram Singh

Inventor： Anthony Renau ,  Vikram Singh

IPC: C23C14/00

CPC classification number: H01L21/2236 ,  H01L21/265

Abstract: Non-doping implantation process utilizing a plasma ion implantation system. A plasma ion implantation system is used to perform a non-doping implantation process such as a pre-amorphization implantation process or a strain altering implantation. Use of the plasma ion implantation system to perform a non-doping implantation process results in higher throughput and is conducive to sequential ion implantation processing.

Abstract translation: 利用等离子体离子注入系统的非掺杂注入工艺。 等离子体离子注入系统用于执行非掺杂注入工艺，例如预非晶化注入工艺或应变改变注入。 使用等离子体离子注入系统执行非掺杂注入工艺导致更高的生产量并且有助于顺序离子注入处理。

公开(公告)号：US20070065576A1

公开(公告)日：2007-03-22

申请号：US11221710

申请日：2005-09-09

Applicant: Vikram Singh ,  Harold Persing ,  Edmund Winder ,  Jeffrey Hopwood ,  Anthony Renau

Inventor： Vikram Singh ,  Harold Persing ,  Edmund Winder ,  Jeffrey Hopwood ,  Anthony Renau

IPC: C23C16/00

CPC classification number: C23C16/45546 ,  C23C16/452 ,  C23C16/4554 ,  C23C16/45544

Abstract: A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for atomic layer deposition. The apparatus may comprise a process chamber having a substrate platform to hold at least one substrate. The apparatus may also comprise a supply of a precursor substance, wherein the precursor substance comprises atoms of at least one first species and atoms of at least one second species, and wherein the supply provides the precursor substance to saturate a surface of the at least one substrate. The apparatus may further comprise a plasma source of metastable atoms of at least one third species, wherein the metabstable atoms are capable of desorbing the atoms of the at least one second species from the saturated surface of the at least one substrate to form one or more atomic layers of the at least one first species.

Abstract translation: 公开了一种用于原子层沉积的技术。 在一个特定的示例性实施例中，该技术可以通过用于原子层沉积的装置来实现。 该装置可以包括具有用于保持至少一个基板的基板平台的处理室。 该装置还可以包括前体物质的供应，其中所述前体物质包含至少一种第一种类的原子和至少一种第二物质的原子，并且其中所述供应提供所述前体物质以饱和所述至少一种 基质。 该装置可以进一步包含至少一种第三种类的亚稳态原子的等离子体源，其中可重构原子能够从至少一种底物的饱和表面解吸所述至少一种第二种类的原子以形成一种或多种 所述至少一种第一种类的原子层。

公开(公告)号：US08664098B2

公开(公告)日：2014-03-04

申请号：US13353993

申请日：2012-01-19

Applicant: Ludovic Godet ,  Timothy J. Miller ,  Svetlana B. Radovanov ,  Anthony Renau ,  Vikram Singh

Inventor： Ludovic Godet ,  Timothy J. Miller ,  Svetlana B. Radovanov ,  Anthony Renau ,  Vikram Singh

IPC: H01L21/26 ,  C23F1/00 ,  C23C16/00 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  C23C14/48

Abstract: A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

Abstract translation: 等离子体处理装置包括处理室，用于支撑工件的压板，被配置为在处理室中产生等离子体的源和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。

公开(公告)号：US08461030B2

公开(公告)日：2013-06-11

申请号：US12947078

申请日：2010-11-16

Applicant: Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Deepak A. Ramappa ,  Russell J. Low ,  Atul Gupta ,  Kevin M. Daniels

Inventor： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Deepak A. Ramappa ,  Russell J. Low ,  Atul Gupta ,  Kevin M. Daniels

IPC: H01L21/26 ,  H01L21/42

CPC classification number: B01J19/081 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0453 ,  H01J2237/1205 ,  H01L21/2236 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/08 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

公开(公告)号：US08101510B2

公开(公告)日：2012-01-24

申请号：US12644103

申请日：2009-12-22

Applicant: Ludovic Godet ,  Timothy Miller ,  Svetlana Radovanov ,  Anthony Renau ,  Vikram Singh

Inventor： Ludovic Godet ,  Timothy Miller ,  Svetlana Radovanov ,  Anthony Renau ,  Vikram Singh

IPC: H01L21/26 ,  H01L21/3065 ,  C23F1/00 ,  C23C16/00

CPC classification number: H01J37/32623 ,  C23C14/48

Abstract: A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

Abstract translation: 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。

公开(公告)号：US20080090392A1

公开(公告)日：2008-04-17

申请号：US11537274

申请日：2006-09-29

Applicant: Vikram Singh ,  Edwin A. Arevalo ,  Anthony Renau

Inventor： Vikram Singh ,  Edwin A. Arevalo ,  Anthony Renau

IPC: H01L21/425 ,  H01L21/26 ,  H01L21/42

CPC classification number: H01L21/265 ,  H01J37/32412 ,  H01J2237/2001 ,  H01L21/26513 ,  H01L21/26593

Abstract: A technique for improved damage control in plasma doping (PLAD) ion implantation is disclosed. According to a particular exemplary embodiment, the technique may be realized as a method for improved damage control in plasma doping (PLAD) ion implantation. The method may comprise placing a wafer on a platen in a chamber. The method may also comprise generating a plasma in the chamber. The method may additionally comprise implanting at least a portion of ions produced from the plasma into the wafer, wherein the wafer is cooled to a temperature no higher than 0° C during ion implantation, and wherein a dose rate associated with the portion of ions is at least 1×1013 atoms/cm2/second.

Abstract translation: 公开了一种用于改进等离子体掺杂（PLAD）离子注入中的损伤控制的技术。 根据特定示例性实施例，该技术可以被实现为用于改进等离子体掺杂（PLAD）离子注入中的损伤控制的方法。 该方法可以包括将晶片放置在室中的压板上。 该方法还可以包括在腔室中产生等离子体。 该方法可以另外包括将从等离子体产生的离子的至少一部分植入到晶片中，其中在离子注入期间将晶片冷却至不高于0℃的温度，并且其中与离子部分相关联的剂量率为 至少1×10 3原子/ cm 2 /秒。

公开(公告)号：US20070224840A1

公开(公告)日：2007-09-27

申请号：US11687822

申请日：2007-03-19

Applicant: Anthony Renau ,  Vikram Singh ,  Atul Gupta ,  Timothy Miller ,  Edwin Arevalo ,  George Papasouliotis ,  Yong Bae Jeon

Inventor： Anthony Renau ,  Vikram Singh ,  Atul Gupta ,  Timothy Miller ,  Edwin Arevalo ,  George Papasouliotis ,  Yong Bae Jeon

IPC: H01L21/00 ,  H01L21/336 ,  H01L21/22 ,  H01L21/38

CPC classification number: H01J37/32935 ,  H01J37/32412 ,  H01J37/3299 ,  H01L22/20

Abstract: A method of selecting plasma doping process parameters includes determining a recipe parameter database for achieving at least one plasma doping condition. The initial recipe parameters are determined from the recipe parameter database. In-situ measurements of at least one plasma doping condition are performed. The in-situ measurements of the at least one plasma doping condition are correlated to at least one plasma doping result. At least one recipe parameter is changed in response to the correlation so as to improve at least one plasma doping process performance metric.

Abstract translation: 选择等离子体掺杂工艺参数的方法包括确定用于实现至少一种等离子体掺杂条件的配方参数数据库。 从配方参数数据库确定初始配方参数。 进行至少一个等离子体掺杂条件的原位测量。 至少一种等离子体掺杂条件的原位测量与至少一种等离子体掺杂结果相关。 响应于相关性改变至少一个配方参数，以便改进至少一个等离子体掺杂工艺性能度量。

公开(公告)号：US20120111834A1

公开(公告)日：2012-05-10

申请号：US13353993

申请日：2012-01-19

Applicant: Ludovic Godet ,  Timothy Miller ,  Svetlana Radovanov ,  Anthony Renau ,  Vikram Singh

Inventor： Ludovic Godet ,  Timothy Miller ,  Svetlana Radovanov ,  Anthony Renau ,  Vikram Singh

IPC: B44C1/22 ,  H01L21/02 ,  H05H1/24 ,  C23C16/50 ,  C23C16/52

CPC classification number: H01J37/32623 ,  C23C14/48

Abstract: A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

Abstract translation: 等离子体处理装置包括处理室，用于支撑工件的压板，被配置为在处理室中产生等离子体的源和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。

公开(公告)号：US20110124186A1

公开(公告)日：2011-05-26

申请号：US12947078

申请日：2010-11-16

Applicant: Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Frank Sinclair ,  Deepak A. Ramappa ,  Russell Low ,  Atul Gupta ,  Kevin M. Daniels

Inventor： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Frank Sinclair ,  Deepak A. Ramappa ,  Russell Low ,  Atul Gupta ,  Kevin M. Daniels

IPC: H01L21/265 ,  G21K5/10

CPC classification number: B01J19/081 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0453 ,  H01J2237/1205 ,  H01L21/2236 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/08 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

Abstract translation: 等离子体处理装置包括等离子体源，其被配置为在等离子体室中产生等离子体，使得等离子体包含用于注入工件的离子。 该装置还包括聚焦板装置，该聚焦板装置具有孔结构，其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状，使得离开孔结构的孔的离子限定聚焦离子。 该设备还包括处理室，其包含与聚焦板间隔开的工件，使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。 该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。

公开(公告)号：US20100255665A1

公开(公告)日：2010-10-07

申请号：US12644103

申请日：2009-12-22

Applicant: Ludovic Godet ,  Timothy Miller ,  Svetlana Radovanov ,  Anthony Renau ,  Vikram Singh

Inventor： Ludovic Godet ,  Timothy Miller ,  Svetlana Radovanov ,  Anthony Renau ,  Vikram Singh

IPC: H01L21/26 ,  C23F1/00 ,  C23C16/00 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  C23C14/48

Abstract: A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

Abstract translation: 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。