公开(公告)号：US20140007413A1

公开(公告)日：2014-01-09

申请号：US14022111

申请日：2013-09-09

申请人： Eric Hudson ,  Andreas Fischer

发明人： Eric Hudson ,  Andreas Fischer

IPC分类号： C23C16/00 ,  C23F1/00

CPC分类号： C23C16/00 ,  C23F1/00 ,  H01J37/32082 ,  H01J37/32623

摘要： A method for manufacturing a plasma processing system is provided. The method includes providing a movable plasma-facing structure configured to surround a plasma that is generated during processing of a substrate. The method also includes disposing a movable electrically conductive structure outside of the movable plasma-facing structure, wherein both structures configured to be deployed and retracted as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. During processing, the RF current from the plasmas flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing. The method further includes coupling a set of conductive straps to the movable electrically conductive structure. The set of conductive straps accommodates the movable electrically conductive structure when it is deployed and retracted while providing the RF current a low impedance path to ground.

摘要翻译： 提供了一种制造等离子体处理系统的方法。 该方法包括提供构造成围绕在衬底的处理期间产生的等离子体的可移动等离子体面向结构。 该方法还包括将可移动导电结构设置在可移动等离子体面向结构的外部，其中两个结构构造成作为单个单元展开和缩回以便于处理基板。 可移动导电结构是在等离子体处理期间接地的射频（RF）。 在处理期间，来自等离子体的RF电流在等离子体处理期间通过可移动等离子体面向结构流动到可移动导电结构。 该方法还包括将一组导电带耦合到可移动导电结构。 一组导电带在展开和缩回时容纳可移动的导电结构，同时为RF电流提供一个低阻抗地线路径。

公开(公告)号：US20110059615A1

公开(公告)日：2011-03-10

申请号：US12945314

申请日：2010-11-12

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

IPC分类号： H01L21/3065

CPC分类号： H01J37/321 ,  H01J37/32091 ,  H01J2237/03

摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

摘要翻译： 用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。 该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。 该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。 每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。 线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

公开(公告)号：US07829468B2

公开(公告)日：2010-11-09

申请号：US11447946

申请日：2006-06-07

申请人： Douglas Keil ,  Eric Hudson ,  Chris Kimball ,  Andreas Fischer

发明人： Douglas Keil ,  Eric Hudson ,  Chris Kimball ,  Andreas Fischer

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/52 ,  C23C16/509 ,  H01J37/32935 ,  H01J37/3299

摘要： A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber with a single planar ion flux (PIF) probe, analyzing the resulting information, measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed to reveal a specific fault. The PIF probe is preferably positioned at a grounded surface within the reactor. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement.

摘要翻译： 提供了一种用于等离子体处理室的故障检测方法。 该方法包括使用单个平面离子通量（PIF）探针监测等离子体室内的等离子体参数，分析所得信息，测量作为时间的函数的等离子体参数并分析所得数据。 数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。 PIF探针优选地位于反应器内的接地表面上。 可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。

公开(公告)号：US20080020574A1

公开(公告)日：2008-01-24

申请号：US11487999

申请日：2006-07-18

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

IPC分类号： C23F1/00 ,  H01L21/302 ,  C23C16/00

CPC分类号： H01J37/321 ,  H01J37/32091 ,  H01J2237/03

摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

摘要翻译： 用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。 该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。 该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。 每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。 线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

公开(公告)号：US20070284246A1

公开(公告)日：2007-12-13

申请号：US11447946

申请日：2006-06-07

申请人： Douglas Keil ,  Eric Hudson ,  Chris Kimball ,  Andreas Fischer

发明人： Douglas Keil ,  Eric Hudson ,  Chris Kimball ,  Andreas Fischer

IPC分类号： C23C14/00

CPC分类号： C23C16/52 ,  C23C16/509 ,  H01J37/32935 ,  H01J37/3299

摘要： A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.

摘要翻译： 提供了一种用于等离子体处理室的故障检测方法。 该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。 这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。 该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。 数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。 可以用诸如探针的检测器进行监测，该探针优选地保持在与腔室内的表面基本上共面的等离子体室内，并且直接测量净离子通量和其它等离子体参数。 检测器优选地位于反应器内的接地表面，例如接地喷头电极，并且可以是平面离子通量探针（PIF）型或非电容型。 可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。 如果检测器是探针，则探针可以嵌入在等离子体处理室的一部分中，并且可以包括一个或多个气体馈通孔。

公开(公告)号：US09251999B2

公开(公告)日：2016-02-02

申请号：US13526391

申请日：2012-06-18

申请人： Rajinder Dhindsa ,  Eric Hudson ,  Alexei Marakhtanov ,  Andreas Fischer

发明人： Rajinder Dhindsa ,  Eric Hudson ,  Alexei Marakhtanov ,  Andreas Fischer

IPC分类号： H01J37/32 ,  H01L21/306 ,  G03F7/42 ,  H01L21/311

CPC分类号： H01J37/32174 ,  G03F7/427 ,  H01J37/32091 ,  H01J37/32128 ,  H01J37/32165 ,  H01J37/32532 ,  H01L21/306 ,  H01L21/31138

摘要： A capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate, the substrate being disposed on the lower electrode during plasma processing. The plasma processing system further includes means for providing at least a first RF signal to the lower electrode, the first RF signal having a first RF frequency. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The plasma processing system further includes means for rectifying the induced RF signal to generate a rectified RF signal such that the rectified RF signal is more positively biased than negatively biased, wherein the substrate is configured to be processed while the rectified RF signal is provided to the upper electrode.

摘要翻译： 提供了具有用于处理衬底的等离子体处理室的电容耦合等离子体处理系统。 等离子体处理系统至少包括用于处理衬底的上电极和下电极，衬底在等离子体处理期间设置在下电极上。 等离子体处理系统还包括用于向下电极提供至少第一RF信号的装置，第一RF信号具有第一RF频率。 第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。 等离子体处理系统还包括用于整流感应RF信号以产生经整流的RF信号的装置，使得整流的RF信号比负偏置更积极地偏置，其中衬底被配置为在被整流的RF信号被提供给 上电极。

公开(公告)号：US08677590B2

公开(公告)日：2014-03-25

申请号：US14022111

申请日：2013-09-09

申请人： Eric Hudson ,  Andreas Fischer

发明人： Eric Hudson ,  Andreas Fischer

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/50 ,  C23C16/509 ,  B25B27/14 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/00 ,  C23F1/00 ,  H01J37/32082 ,  H01J37/32623

摘要： A method for manufacturing a plasma processing system is provided. The method includes providing a movable plasma-facing structure configured to surround a plasma that is generated during processing of a substrate. The method also includes disposing a movable electrically conductive structure outside of the movable plasma-facing structure, wherein both structures configured to be deployed and retracted as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. During processing, the RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing. The method further includes coupling a set of conductive straps to the movable electrically conductive structure. The set of conductive straps accommodates the movable electrically conductive structure when it is deployed and retracted while providing the RF current a low impedance path to ground.

摘要翻译： 提供了一种制造等离子体处理系统的方法。 该方法包括提供构造成围绕在衬底的处理期间产生的等离子体的可移动等离子体面向结构。 该方法还包括将可移动导电结构设置在可移动等离子体面向结构的外部，其中两个结构构造成作为单个单元展开和缩回以便于处理基板。 可移动导电结构是在等离子体处理期间接地的射频（RF）。 在处理期间，等离子体处理期间来自等离子体的RF电流通过可移动等离子体面向结构流动到可移动导电结构。 该方法还包括将一组导电带耦合到可移动导电结构。 一组导电带在展开和缩回时容纳可移动的导电结构，同时为RF电流提供一个低阻抗地线路径。

公开(公告)号：US08540844B2

公开(公告)日：2013-09-24

申请号：US12361494

申请日：2009-01-28

申请人： Eric Hudson ,  Andreas Fischer

发明人： Eric Hudson ,  Andreas Fischer

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/50 ,  C23C16/509 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/00 ,  C23F1/00 ,  H01J37/32082 ,  H01J37/32623

摘要： A movable plasma confinement structure configured for confining plasma in a plasma processing chamber during plasma processing of a substrate is provided. The movable plasma confinement structure includes a movable plasma-facing structure configured to surround the plasma. The movable plasma confinement structure also includes a movable electrically conductive structure disposed outside of the movable plasma-facing structure and configured to be deployed and retracted with the movable plasma-facing structure as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. The movable plasma-facing structure is disposed between the plasma and the movable electrically conductive structure during the plasma processing such that RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing.

摘要翻译： 提供了一种可移动的等离子体限制结构，其被配置为在等离子体处理过程中将等离子体限制在等离子体处理室中。 可移动等离子体限制结构包括构造成围绕等离子体的可移动等离子体面向结构。 可移动等离子体限制结构还包括可移动导电结构，其设置在可移动等离子体面向结构的外部，并且被配置为以可移动的等离子体面向结构作为单个单元展开和缩回以便于处理基板。 可移动导电结构是在等离子体处理期间接地的射频（RF）。 等离子体等离子体结构在等离子体处理期间设置在等离子体和可移动导电结构之间，使得来自等离子体处理期间来自等离子体处理的来自等离子体的RF电流通过可移动等离子体面向结构流动到可移动导电结构。

公开(公告)号：US09536711B2

公开(公告)日：2017-01-03

申请号：US12047820

申请日：2008-03-13

申请人： Rajinder Dhindsa ,  Eric Hudson ,  Alexei Marakhtanov ,  Maryam Moravej ,  Andreas Fischer

发明人： Rajinder Dhindsa ,  Eric Hudson ,  Alexei Marakhtanov ,  Maryam Moravej ,  Andreas Fischer

IPC分类号： H01J37/32

CPC分类号： H01J37/32642 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32623 ,  H01J37/32697

摘要： In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.

摘要翻译： 在等离子体处理室中，提供了一种处理基板的方法。 该方法包括在配置有上电极（UE）和下电极（LE）的等离子体处理室中支撑衬底，配置至少一个射频电源以点燃UE和LE之间的等离子体，并提供导电耦合 导电耦合环耦合到LE以提供导电路径。 该方法还包括提供等离子体对衬底周边（PFSP）环，PFSP环设置在导电耦合环上方。 该方法还包括将PFSP环耦合到通过RF滤波器的直流（DC）接地中的至少一个，通过RF滤波器的DC接地和可变电阻器，通过RF滤波器的正直流电源以及 负直流电源通过RF滤波器控制等离子体处理参数。

公开(公告)号：US20120175060A1

公开(公告)日：2012-07-12

申请号：US13422670

申请日：2012-03-16

申请人： Eric Hudson ,  Andreas Fischer

发明人： Eric Hudson ,  Andreas Fischer

IPC分类号： H01L21/3065 ,  C23C16/50

CPC分类号： H01J37/32972 ,  H01J37/32935

摘要： A method of detecting substrate arcing in a semiconductor plasma processing apparatus is provided. A substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. Process gas is introduced into the reaction chamber. A plasma is generated from the process gas and the substrate is processed with the plasma. Intensities of real-time spectrometry signals of selected gas species produced in the reaction chamber during plasma processing are monitored. The selected gas species are generated by a substrate arcing event. The arcing event is detected when the intensities are above a threshold value.

摘要翻译： 提供了一种在半导体等离子体处理装置中检测基板电弧的方法。 将衬底放置在等离子体处理设备的反应室中的衬底支撑件上。 将工艺气体引入反应室。 从处理气体产生等离子体，并用等离子体处理衬底。 监测在等离子体处理期间在反应室中产生的选定气体种类的实时光谱信号的强度。 选择的气体种类通过基板电弧事件产生。 当强度高于阈值时，检测到电弧事件。