公开(公告)号：US20040140468A1

公开(公告)日：2004-07-22

申请号：US10754060

申请日：2004-01-07

Applicant: AU Optronics Corp.

Inventor： Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

IPC: H01L029/04

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/2205 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract translation: 用于促进电子迁移率的缓冲层。 缓冲层包括非晶硅层（a-Si）和含氧化物层。 a-Si具有足够高的密度，通过a-Si缓冲层防止衬底中的颗粒扩散到有源层中。 同样，具有导热性的缓冲器为通过受激准分子激光退火（ELA）的无定形有源层重结晶期间的热扩散提供了良好的途径。 因此，结晶硅的晶粒尺寸的均匀性提高，TFT的电子迁移率提高。

公开(公告)号：US20040106240A1

公开(公告)日：2004-06-03

申请号：US10410041

申请日：2003-04-08

Applicant: AU Optronics Corp.

Inventor： Chia-Tien Peng ,  Long-Sheng Liao ,  Yi-Chang Tsao

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

Abstract: A process for forming a polysilicon layer. First, an amorphous silicon layer is formed. Next, the amorphous silicon layer is pre-treated such that a surface of the amorphous silicon layer is oxidized to a silicon oxide layer or nitridized to a silicon nitride layer. Next, the amorphous silicon layer is crystallized to form a polysilicon layer. TFT fabricated by the present invention has smaller Vt and higher electron mobility.

Abstract translation: 一种形成多晶硅层的工艺。 首先，形成非晶硅层。 接下来，非晶硅层被预处理，使得非晶硅层的表面被氧化成氧化硅层或氮化成氮化硅层。 接下来，非晶硅层被结晶以形成多晶硅层。 通过本发明制造的TFT具有更小的Vt和更高的电子迁移率。

公开(公告)号：US20040241889A1

公开(公告)日：2004-12-02

申请号：US10751238

申请日：2003-12-30

Applicant: AU Optronics Corp.

Inventor： Long-Sheng Liao ,  Chien-Chou Hsu ,  Yi-Chang Tsao

IPC: H01L021/66

CPC classification number: H01L21/02667 ,  H01L21/2026

Abstract: A method and system of automatic beam energy control. First, a substrate is provided. Next, hydrogen content of the substrate is measured to determine whether hydrogen content exceeds a critical hydrogen content limit. A warning is issued when hydrogen content exceeds a critical hydrogen content limit. Substrate thickness is measured when hydrogen content does not exceed a critical hydrogen content limit. A database comprising a plurality of beam energy values individually absorbed by substrates of different thicknesses is provided. An appropriate beam energy level corresponding to the measured thickness is provided by the database. Finally, beam energy is delivered to the substrate accordingly.

Abstract translation: 自动光束能量控制的方法和系统。 首先，提供基板。 接下来，测量衬底的氢含量以确定氢含量是否超过临界氢含量极限。 当氢含量超过临界氢含量限制时，会发出警告。 当氢含量不超过临界氢含量极限时，测量基板厚度。 提供了包括由不同厚度的基板单独吸收的多个光束能量值的数据库。 由数据库提供与测量厚度对应的适当的光束能级。 最后，光束能量被相应地传送到衬底。

公开(公告)号：US20040115337A1

公开(公告)日：2004-06-17

申请号：US10607607

申请日：2003-06-27

Applicant: AU Optronics Corp.

Inventor： Yi-Chang Tsao ,  Long-Sheng Liao

IPC: B05D003/06 ,  G01J005/00

CPC classification number: G01N21/55 ,  G01N21/9501 ,  H01L21/268

Abstract: A method for inspecting crystal quality of a polysilicon film. First, a substrate covered by a polysilicon layer is provided. Next, a probe light beam having a predetermined wavelength is irradiated through a beam splitter to separate into a first light beam and a second light beam, which is used for irradiating the polysilicon layer. Thereafter, the light intensity of the first light beam and the light intensity of the second light beam reflected from the polysilicon layer are detected to achieve a light intensity ratio. Finally, crystal quality of the polysilicon layer is monitored by the light intensity ratio. An apparatus for inspecting crystal quality of a polysilicon film and the method for controlling the same are also disclosed.

Abstract translation: 一种用于检查多晶硅膜的晶体质量的方法。 首先，提供被多晶硅层覆盖的基板。 接下来，通过分束器照射具有预定波长的探测光束，以分离成用于照射多晶硅层的第一光束和第二光束。 此后，检测第一光束的光强度和从多晶硅层反射的第二光束的光强度以实现光强度比。 最后，通过光强比监测多晶硅层的晶体质量。 还公开了一种用于检查多晶硅膜的晶体质量的装置及其控制方法。

公开(公告)号：US20040075835A1

公开(公告)日：2004-04-22

申请号：US10410557

申请日：2003-04-07

Applicant: AU Optronics Corp.

Inventor： Kun-Chih Lin ,  Long-Sheng Liao ,  Chen-Chou Hsu

IPC: G01J004/00

CPC classification number: G01N21/211 ,  G01N2021/213 ,  G01N2021/9513

Abstract: A method of inspecting the grain size of a polysilicon film. A substrate covered by an amorphous silicon layer is provided. Next, the amorphous silicon layer is annealed by a laser beam with a predetermined laser energy density to transfer it to a polysilicon layer. Thereafter, the polysilicon layer is measured by a spectrometer under a predetermined photon energy range to achieve an optical parameter. Finally, the optical parameter is quantized to achieve a determining index, thereby monitoring the grain size of the polysilicon layer.

Abstract translation: 检查多晶硅膜的晶粒尺寸的方法。 提供了由非晶硅层覆盖的衬底。 接下来，通过具有预定激光能量密度的激光束对非晶硅层进行退火，将其转移到多晶硅层。 此后，通过光谱仪在预定的光子能量范围内测量多晶硅层以实现光学参数。 最后，对光学参数进行量化以获得确定指标，从而监测多晶硅层的晶粒尺寸。