公开(公告)号：US20040140468A1

公开(公告)日：2004-07-22

申请号：US10754060

申请日：2004-01-07

Applicant: AU Optronics Corp.

Inventor： Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

IPC: H01L029/04

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/2205 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract translation: 用于促进电子迁移率的缓冲层。 缓冲层包括非晶硅层（a-Si）和含氧化物层。 a-Si具有足够高的密度，通过a-Si缓冲层防止衬底中的颗粒扩散到有源层中。 同样，具有导热性的缓冲器为通过受激准分子激光退火（ELA）的无定形有源层重结晶期间的热扩散提供了良好的途径。 因此，结晶硅的晶粒尺寸的均匀性提高，TFT的电子迁移率提高。

公开(公告)号：US20040075835A1

公开(公告)日：2004-04-22

申请号：US10410557

申请日：2003-04-07

Applicant: AU Optronics Corp.

Inventor： Kun-Chih Lin ,  Long-Sheng Liao ,  Chen-Chou Hsu

IPC: G01J004/00

CPC classification number: G01N21/211 ,  G01N2021/213 ,  G01N2021/9513

Abstract: A method of inspecting the grain size of a polysilicon film. A substrate covered by an amorphous silicon layer is provided. Next, the amorphous silicon layer is annealed by a laser beam with a predetermined laser energy density to transfer it to a polysilicon layer. Thereafter, the polysilicon layer is measured by a spectrometer under a predetermined photon energy range to achieve an optical parameter. Finally, the optical parameter is quantized to achieve a determining index, thereby monitoring the grain size of the polysilicon layer.

Abstract translation: 检查多晶硅膜的晶粒尺寸的方法。 提供了由非晶硅层覆盖的衬底。 接下来，通过具有预定激光能量密度的激光束对非晶硅层进行退火，将其转移到多晶硅层。 此后，通过光谱仪在预定的光子能量范围内测量多晶硅层以实现光学参数。 最后，对光学参数进行量化以获得确定指标，从而监测多晶硅层的晶粒尺寸。