公开(公告)号：US20150153657A1

公开(公告)日：2015-06-04

申请号：US14413394

申请日：2013-06-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander Alexandrovich Danilin ,  Boris Menchtchikov ,  Alexander Viktorovych Padiy ,  Alejandro Xabier Arrizabalaga Uriarte

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70516 ,  G03F7/70725

Abstract: A method of calibrating a substrate positioning system of a lithographic apparatus, the method including: exposing a pattern with the lithographic apparatus on an exposed layer on the surface of a substrate having a reference layer, wherein the pattern corresponds to a movement of the substrate by the substrate positioning system; measuring overlay data between the exposed layer and the reference layer on a plurality of positions on the substrate; transforming the overlay data from a spatial domain to a frequency domain by a discrete cosine transformation; modifying the overlay data in the frequency domain by selecting a subset of the overlay data; transforming the modified overlay data from the frequency domain back to the spatial domain by an inverse discrete cosine transformation; calibrating the substrate positioning system by using the modified overlay data in the spatial domain.

Abstract translation: 一种校准光刻设备的衬底定位系统的方法，所述方法包括：将具有光刻设备的图案暴露在具有参考层的衬底的表面上的暴露层上，其中该图案对应于衬底的移动 基板定位系统; 在所述衬底上的多个位置上测量所述暴露层和所述参考层之间的覆盖数据; 通过离散余弦变换将覆盖数据从空间域变换到频域; 通过选择覆盖数据的子集来修改频域中的覆盖数据; 通过反相离散余弦变换将经修改的覆盖数据从频域转换回空间域; 通过使用空间域中的修改的覆盖数据来校准衬底定位系统。

公开(公告)号：US09395633B2

公开(公告)日：2016-07-19

申请号：US14413394

申请日：2013-06-14

Applicant: ASML Netherlands B.V.

Inventor： Alexander Alexandrovich Danilin ,  Alejandro Xabier Arrizabalaga Uriarte ,  Boris Menchtchikov ,  Alexander Viktorovych Padiy

IPC: G03B27/68 ,  G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70516 ,  G03F7/70725

Abstract: A method of calibrating a substrate positioning system of a lithographic apparatus, the method including: exposing a pattern with the lithographic apparatus on an exposed layer on the surface of a substrate having a reference layer, wherein the pattern corresponds to a movement of the substrate by the substrate positioning system; measuring overlay data between the exposed layer and the reference layer on a plurality of positions on the substrate; transforming the overlay data from a spatial domain to a frequency domain by a discrete cosine transformation; modifying the overlay data in the frequency domain by selecting a subset of the overlay data; transforming the modified overlay data from the frequency domain back to the spatial domain by an inverse discrete cosine transformation; calibrating the substrate positioning system by using the modified overlay data in the spatial domain.

Abstract translation: 一种校准光刻设备的衬底定位系统的方法，所述方法包括：将具有光刻设备的图案暴露在具有参考层的衬底的表面上的暴露层上，其中该图案对应于衬底的移动 基板定位系统; 在所述衬底上的多个位置上测量所述暴露层和所述参考层之间的覆盖数据; 通过离散余弦变换将覆盖数据从空间域变换到频域; 通过选择覆盖数据的子集来修改频域中的覆盖数据; 通过反相离散余弦变换将经修改的覆盖数据从频域转换回空间域; 通过使用空间域中的修改的覆盖数据来校准衬底定位系统。

公开(公告)号：US10444635B2

公开(公告)日：2019-10-15

申请号：US16098350

申请日：2017-04-05

Applicant: ASML Netherlands B.V.

Inventor： Carolus Johannes Catharina Schoormans ,  Johannes Jacobus Matheus Baselmans ,  Engelbertus Antonius Fransiscus Van Der Pasch ,  Johannes Aldegonda Theodorus Marie Van Den Homberg ,  Maksym Yuriiovych Sladkov ,  Andreas Johannes Antonius Brouns ,  Alexander Viktorovych Padiy

IPC: G03B27/32 ,  G03F7/20 ,  G03F9/00

Abstract: A lithographic method for measuring a position of a target grating with a mask sensor apparatus which comprises a plurality of detector modules each comprising a diffraction grating located at a mask side of a projection system of a lithographic apparatus and an associated detector, the method comprising a first step of measuring first intensities of a combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along a first direction; a second step of displacing the mask sensor apparatus relative to the target grating in a second direction, wherein a size of the relative displacement is proportional to a spatial frequency of a potential error; and a third step of measuring second intensities of the combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along the first direction.