公开(公告)号：US20230393487A1

公开(公告)日：2023-12-07

申请号：US18033028

申请日：2021-11-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Gijs TEN HAAF ,  Shreya ADYANTHAYA

IPC: G03F7/00 ,  G03F9/00 ,  G06F30/20

CPC classification number: G03F7/705 ,  G06F30/20 ,  G03F9/7019

Abstract: A method for modeling measurement data over a substrate area relating to a substrate in a lithographic process. The method includes obtaining measurement data relating to the substrate and performing a combined fitting to fit to the measurement data: at least a first interfield model which describes distortion over the substrate and a field distortion model which describes distortion within an exposure field; wherein either: the at least a first interfield model includes a radial basis function model or an elastic energy minimizing spline model; or the method further includes fitting a radial basis function model or an elastic energy minimizing spline model to a distortion residual of the combined fit of a different interfield model and the field distortion model.