公开(公告)号：US12107005B2

公开(公告)日：2024-10-01

申请号：US17491684

申请日：2021-10-01

申请人： ASM IP Holding B.V.

发明人： Zecheng Liu ,  Viljami Pore ,  Tommi Paavo Tynell ,  Yu Xu ,  Mikko Ruoho

IPC分类号： H01L21/768 ,  H01J37/32 ,  H01L21/02

CPC分类号： H01L21/76837 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01J2237/332

摘要： The current disclosure relates to methods of depositing silicon-containing material on a substrate comprising a gap, wherein the method comprises providing the substrate in a reaction chamber and depositing a carbon-containing inhibition layer on the substrate, and depositing silicon-containing material on the substrate. Depositing the inhibition layer comprises supplying a carbon precursor comprising carbon in the reaction chamber and supplying first plasma in the reaction chamber to form a first reactive species from the carbon precursor for forming the inhibition layer on the substrate. The inhibition layer is deposited preferentially in the vicinity of the top of the gap. The disclosure further relates to methods of forming a structure, methods of manufacturing a device and to a semiconductor processing apparatus.

公开(公告)号：US20220108915A1

公开(公告)日：2022-04-07

申请号：US17491684

申请日：2021-10-01

申请人： ASM IP Holding B.V.

发明人： Zecheng Liu ,  Viljami Pore ,  Tommi Paavo Tynell ,  Yu Xu ,  Mikko Ruoho

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01J37/32

摘要： The current disclosure relates to methods of depositing silicon-containing material on a substrate comprising a gap, wherein the method comprises providing the substrate in a reaction chamber and depositing a carbon-containing inhibition layer on the substrate, and depositing silicon-containing material on the substrate. Depositing the inhibition layer comprises supplying a carbon precursor comprising carbon in the reaction chamber and supplying first plasma in the reaction chamber to form a first reactive species from the carbon precursor for forming the inhibition layer on the substrate. The inhibition layer is deposited preferentially in the vicinity of the top of the gap. The disclosure further relates to methods of forming a structure, methods of manufacturing a device and to a semiconductor processing apparatus.

公开(公告)号：US20220319834A1

公开(公告)日：2022-10-06

申请号：US17708299

申请日：2022-03-30

申请人： ASM IP Holding, B.V.

发明人： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Viljami Pore ,  Yu Xu

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01J37/32 ,  C23C16/50 ,  C23C16/40 ,  C23C16/52 ,  C23C16/455

摘要： Disclosed are methods and systems for filling a gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.