公开(公告)号：US10138397B2

公开(公告)日：2018-11-27

申请号：US15623540

申请日：2017-06-15

Applicant: ASAHI GLASS COMPANY, LIMITED

Inventor： Iori Yoshida ,  Satoshi Takemiya ,  Hiroyuki Tomonaga

IPC: C30B29/36 ,  C30B25/18 ,  C30B23/02 ,  C09G1/04 ,  H01L21/02 ,  C30B33/00 ,  H01L29/16

Abstract: The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.

公开(公告)号：US20170342298A1

公开(公告)日：2017-11-30

申请号：US15662798

申请日：2017-07-28

Applicant: ASAHI GLASS COMPANY, LIMITED

Inventor： Iori Yoshida ,  Satoshi Takemiya ,  Hiroyuki Tomonaga

IPC: C09G1/04 ,  H01L21/02 ,  C30B33/00 ,  C30B29/36 ,  H01L29/16

CPC classification number: C09G1/04 ,  C30B29/36 ,  C30B33/00 ,  H01L21/02024 ,  H01L29/1608 ,  Y10T428/24355

Abstract: The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.

公开(公告)号：US20140220299A1

公开(公告)日：2014-08-07

申请号：US14246556

申请日：2014-04-07

Applicant: ASAHI GLASS COMPANY, LIMITED

Inventor： Iori YOSHIDA ,  Satoshi Takemiya ,  Hiroyuki Tomonaga

IPC: C09G1/04 ,  C30B29/36

CPC classification number: C09G1/04 ,  C30B29/36 ,  C30B33/00 ,  H01L21/02024 ,  H01L29/1608 ,  Y10T428/24355

Abstract: The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.

Abstract translation: 本发明涉及一种单晶碳化硅基板，其具有主表面，该主表面具有包含原子台阶的原子台阶结构和源自晶体结构的台阶，其中原子台阶结构具有 原子台阶的前端部的平均线粗糙度与原子台阶的高度的比例为20％以下。

公开(公告)号：US20130071669A1

公开(公告)日：2013-03-21

申请号：US13676651

申请日：2012-11-14

Applicant: ASAHI GLASS COMPANY, LIMITED

Inventor： Hirokazu Kodaira ,  Hiroyuki Tomonaga

IPC: G02B5/22

CPC classification number: G02B5/22 ,  C03C17/008 ,  C03C2217/74 ,  C09D5/32 ,  C09D7/48 ,  C09D183/02 ,  C09D183/04 ,  C09D183/06 ,  G02B5/223 ,  Y10T428/31612

Abstract: There are provided a coating solution for forming an ultraviolet-absorbing film that has mechanical durability such as abrasion resistance, sufficiently secures colorlessness and transparency, and has less deterioration of ultraviolet-absorbing ability caused by long-time light exposure, and an ultraviolet-absorbing glass article having an ultraviolet-absorbing film that is formed by using the coating solution, has mechanical durability such as abrasion resistance, sufficiently secures colorlessness and transparency, and has less deterioration of ultraviolet-absorbing ability caused by long-time light exposure. A coating solution for forming an ultraviolet-absorbing film including: a silicon oxide-based matrix material component consisting of at least one selected from hydrolyzable silicon compounds; an ultraviolet absorber; an acid having a primary proton pKa from of 1.0 to 5.0; and a water and an ultraviolet-absorbing glass article obtained by using it.

Abstract translation: 提供了一种用于形成具有机械耐久性如耐磨性，足够确保无色透明度并且具有较少的长时间曝光引起的紫外线吸收能力劣化的紫外线吸收膜的涂布溶液和紫外线吸收 具有通过使用该涂布液形成的紫外线吸收膜的玻璃制品具有机械耐久性如耐磨性，足够确保无色透明度，并且由于长时间曝光而引起的紫外线吸收能力的劣化较小。 一种用于形成紫外线吸收膜的涂布溶液，包括：由选自可水解硅化合物中的至少一种构成的氧化硅类基质材料成分; 紫外线吸收剂; 初级质子pKa为1.0〜5.0的酸; 以及通过使用它获得的水和紫外线吸收玻璃制品。

公开(公告)号：US10040972B2

公开(公告)日：2018-08-07

申请号：US15662798

申请日：2017-07-28

Applicant: ASAHI GLASS COMPANY, LIMITED

Inventor： Iori Yoshida ,  Satoshi Takemiya ,  Hiroyuki Tomonaga

IPC: H01L21/02 ,  H01L21/306 ,  C09G1/04 ,  C30B29/36 ,  C30B33/00 ,  H01L29/16

Abstract: A process of manufacturing a single-crystal silicon-carbide substrate, includes contacting a surface of a single-crystal silicon-carbide plate with a surface of a polishing pad; and moving the surface of the single-crystal silicon-carbide plate relative to the surface of the polishing pad while supplying a polishing solution to the surface the polishing pad, to polish the surface of the single-crystal silicon-carbide plate. The polishing pad comprises a non-woven fabric or a porous resin. The polishing solution comprises an oxidizing agent which comprises a transition metal having oxidation-reduction potential of 0.5 V or more. Neither the polishing pad nor the polishing solution comprises an abrasive.

公开(公告)号：US20140057438A1

公开(公告)日：2014-02-27

申请号：US14064397

申请日：2013-10-28

Applicant: ASAHI GLASS COMPANY, LIMITED

Inventor： Iori YOSHIDA ,  Satoshi Takemiya ,  Hiroyuki Tomonaga

IPC: H01L21/306

CPC classification number: H01L21/30625 ,  C09G1/04 ,  H01L21/02024 ,  H01L29/1608

Abstract: There is provided a polishing method for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate at a high polishing rate to obtain a high-quality surface that is smooth and excellent in surface properties. This polishing method is a method of supplying a polishing liquid to a polishing pad not including abrasive grains to bring a surface to be polished of the non-oxide single-crystal substrate and the polishing pad into contact with each other and polishing the surface to be polished by a relative movement between them, the method characterized in that the polishing liquid comprises: an oxidant whose redox potential is 0.5 V or more and which contains a transition metal; and water, and does not contain abrasive grains.

Abstract translation: 提供了以高抛光速度对非氧化物单晶基板如碳化硅单晶基板进行抛光的抛光方法，以获得光滑且表面性能优异的高质量表面。 该抛光方法是将研磨液供给到不含磨粒的研磨垫的方法，使非氧化物单晶基板和抛光垫的被研磨面相互接触并研磨成为 通过它们之间的相对运动抛光，其特征在于抛光液体包括：氧化还原电位为0.5V以上并含有过渡金属的氧化剂; 和水，不含磨粒。

公开(公告)号：US09725355B2

公开(公告)日：2017-08-08

申请号：US14035339

申请日：2013-09-24

Applicant: ASAHI GLASS COMPANY, LIMITED

Inventor： Hirokazu Kodaira ,  Yutaka Hayami ,  Hiroyuki Tomonaga

IPC: C03C17/32 ,  C03C17/00 ,  C09D5/02 ,  C09D5/32 ,  C09D7/12 ,  C08K3/22 ,  C08K5/3475 ,  C08K5/3492 ,  C08L63/00

CPC classification number: C03C17/326 ,  C03C17/008 ,  C03C2217/445 ,  C03C2217/476 ,  C03C2217/74 ,  C08K3/22 ,  C08K5/3475 ,  C08K5/34926 ,  C08L63/00 ,  C09D5/027 ,  C09D5/32 ,  C09D7/48 ,  C09D7/61 ,  Y10T428/265

Abstract: To provide a liquid composition capable of forming a coating film which has sufficient ultraviolet-absorbing ability and infrared-absorbing ability.A liquid composition for forming a coating film comprising an infrared absorber selected from indium tin oxide, antinomy tin oxide and a composite tungsten oxide, an ultraviolet absorber selected from a benzophenone compound, a triazine compound and a benzotriazole compound, a dispersing agent having an acid value and/or an amine value, a binder component and a liquid medium, wherein the dispersing agent is contained in a content such that the product of the sum (mgKOH/g) of the acid value and the amine value of the dispersing agent, and the mass ratio of the dispersing agent to the infrared absorber, is from 2 to 30 (mgKOH/g).

公开(公告)号：US09129901B2

公开(公告)日：2015-09-08

申请号：US14064397

申请日：2013-10-28

Applicant: ASAHI GLASS COMPANY, LIMITED

Inventor： Iori Yoshida ,  Satoshi Takemiya ,  Hiroyuki Tomonaga

IPC: H01L21/306 ,  H01L21/02 ,  C09G1/04 ,  H01L29/16

CPC classification number: H01L21/30625 ,  C09G1/04 ,  H01L21/02024 ,  H01L29/1608

Abstract: There is provided a polishing method for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate at a high polishing rate to obtain a high-quality surface that is smooth and excellent in surface properties. This polishing method is a method of supplying a polishing liquid to a polishing pad not including abrasive grains to bring a surface to be polished of the non-oxide single-crystal substrate and the polishing pad into contact with each other and polishing the surface to be polished by a relative movement between them, the method characterized in that the polishing liquid comprises: an oxidant whose redox potential is 0.5 V or more and which contains a transition metal; and water, and does not contain abrasive grains.

Abstract translation: 提供了以高抛光速度对非氧化物单晶基板如碳化硅单晶基板进行抛光的抛光方法，以获得光滑且表面性能优异的高质量表面。 该抛光方法是将研磨液供给到不含磨粒的研磨垫的方法，使非氧化物单晶基板和抛光垫的被研磨面相互接触并研磨成为 通过它们之间的相对运动抛光，其特征在于抛光液体包括：氧化还原电位为0.5V以上并含有过渡金属的氧化剂; 和水，不含磨粒。

公开(公告)号：US09085714B2

公开(公告)日：2015-07-21

申请号：US14095384

申请日：2013-12-03

Applicant: ASAHI GLASS COMPANY, LIMITED

Inventor： Iori Yoshida ,  Satoshi Takemiya ,  Hiroyuki Tomonaga

IPC: C09K13/00 ,  C09G1/02 ,  H01L21/02 ,  H01L21/04 ,  H01L21/306

CPC classification number: C09G1/02 ,  H01L21/02024 ,  H01L21/0475 ,  H01L21/30625

Abstract: A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles, cerium oxide particles and a dispersion medium, in which a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20.

Abstract translation: 提供了用于抛光具有高抛光速率的诸如碳化硅单晶衬底的非氧化物单晶衬底以获得光滑表面的抛光剂。 该抛光剂包括氧化还原电位为0.5V以上且含有过氧化物金属，氧化硅粒子，氧化铈粒子和分散介质的氧化物，氧化硅粒子与氧化铈粒子的质量比为0.2以下 到20。