公开(公告)号：US20170125215A1

公开(公告)日：2017-05-04

申请号：US14986168

申请日：2015-12-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Yana CHENG ,  Zhefeng LI ,  Chi Hong CHING ,  Yong CAO ,  Rongjun WANG

IPC: H01J37/32 ,  C23C14/34

Abstract: Methods are disclosed for depositing a thin film of compound material on a substrate. In some embodiments, a method of depositing a layer of compound material on a substrate include: flowing a reactive gas into a plasma processing chamber having a substrate to be sputter deposited disposed therein in opposition to a sputter target comprising a metal; exciting the reactive gas into a reactive gas plasma to react with the sputter target and to form a first layer of compound material thereon; flowing an inert gas into the plasma processing chamber; and exciting the inert gas into a plasma to sputter a second layer of the compound material onto the substrate directly from the first layer of compound material. The cycles of target poisoning and sputtering may be repeated until a compound material layer of appropriate thickness has been formed on the substrate.