公开(公告)号：US20210057186A1

公开(公告)日：2021-02-25

申请号：US16545414

申请日：2019-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： SIEW KIT HOI ,  ZHONG YAOYING ,  XINXIN WANG

IPC: H01J37/32 ,  H01L21/02 ,  C23C14/14 ,  C23C14/35 ,  H01J37/34

Abstract: Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a second aluminum layer atop the first aluminum layer, wherein the second aluminum layer has a second grain size larger than the first grain size; and depositing aluminum atop the second aluminum layer under conditions sufficient to increase the second grain size.