公开(公告)号：US20180142340A1

公开(公告)日：2018-05-24

申请号：US15814696

申请日：2017-11-16

Applicant: APPLIED MATERIALS, INC.

Inventor： WILLIAM JOHANSON ,  SIEW KIT HOI ,  JOHN MAZZOCCO ,  KIRANKUMAR SAVANDAIAH ,  PRASHANT PRABHU

IPC: C23C14/04 ,  C23C14/34

CPC classification number: C23C14/042 ,  C23C14/34 ,  H01J37/32477 ,  H01J37/34

Abstract: Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes an adapter having an adapter body and a shield portion radially inward of the adapter body; a heat transfer channel formed in the adapter body; a shadow ring coupled to the adapter such that the shield portion of the adapter extends over a portion of the shadow ring; and a ceramic insulator disposed between the shadow ring and the adapter to electrically isolate the shadow ring from the adapter.

公开(公告)号：US20210057186A1

公开(公告)日：2021-02-25

申请号：US16545414

申请日：2019-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： SIEW KIT HOI ,  ZHONG YAOYING ,  XINXIN WANG

IPC: H01J37/32 ,  H01L21/02 ,  C23C14/14 ,  C23C14/35 ,  H01J37/34

Abstract: Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a second aluminum layer atop the first aluminum layer, wherein the second aluminum layer has a second grain size larger than the first grain size; and depositing aluminum atop the second aluminum layer under conditions sufficient to increase the second grain size.

公开(公告)号：US20180226282A1

公开(公告)日：2018-08-09

申请号：US15887446

申请日：2018-02-02

Applicant: APPLIED MATERIALS, INC.

Inventor： SIEW KIT HOI ,  Ananthkrishna JUPUDI ,  YUEH SHENG OW

IPC: H01L21/67 ,  G01J1/42 ,  G01J3/45 ,  G01J5/08 ,  G01J5/00

CPC classification number: H01L21/67248 ,  G01J1/42 ,  G01J3/45 ,  G01J5/0007 ,  G01J5/026 ,  G01J5/0821 ,  G01J5/0896 ,  H01L21/67115

Abstract: In some embodiments, an apparatus for processing substrates includes: a substrate support within a processing chamber; a light source directly coupled to a light isolator and configured to deliver incident light to and through a first surface of the substrate when disposed on the substrate support; an optical fiber having a first end spaced apart a first distance from the first surface and a second end directly coupled to the light source via a coupling element; a photodetector directly coupled to the second end of the optical fiber via the coupling element and configured to receive a first reflected light beam reflected off the first surface and a second reflected light beam reflected off an inner boundary of a second surface of the substrate, opposite the first surface; and a signal processor to determine a temperature of the substrate based on the first and second reflected light beams.