公开(公告)号：US20150262834A1

公开(公告)日：2015-09-17

申请号：US14642340

申请日：2015-03-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Sergey G. BELOSTOTSKIY ,  Chinh DINH ,  Qingjun ZHOU ,  Srinivas D. NEMANI ,  Andrew NGUYEN

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/263

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01L21/263

Abstract: A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.

Abstract translation: 提供了一种用于蚀刻设置在基板上的电介质层的方法。 该方法包括在蚀刻处理室中从静电卡盘取下基板，并在基板从静电卡盘脱卡的同时循环蚀刻电介质层。 循环蚀刻包括在提供到蚀刻处理室中的蚀刻气体混合物中远程产生等离子体，以在第一温度下蚀刻设置在基板上的电介质层。 蚀刻介电层产生蚀刻副产物。 循环蚀刻还包括将衬底垂直移动到蚀刻处理室中的气体分配板，并且使升华气体从气体分配板朝向衬底流动以升华蚀刻副产物。 升华在第二温度下进行，其中第二温度大于第一温度。