公开(公告)号：US09842875B2

公开(公告)日：2017-12-12

申请号：US15161179

申请日：2016-05-20

Applicant: Apple Inc.

Inventor： Xiaofeng Fan ,  Philip H. Li ,  Chung Chun Wan ,  Anup K. Sharma ,  Xiangli Li

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685

Abstract: A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.

公开(公告)号：US09741754B2

公开(公告)日：2017-08-22

申请号：US13787094

申请日：2013-03-06

Applicant: Apple Inc.

Inventor： Xiangli Li ,  Xiaofeng Fan ,  Chung Chun Wan

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/378

CPC classification number: H01L27/14609 ,  H01L27/14616 ,  H04N5/35572 ,  H04N5/37452 ,  H04N5/378

Abstract: Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node.

公开(公告)号：US20160343756A1

公开(公告)日：2016-11-24

申请号：US15161179

申请日：2016-05-20

Applicant: Apple Inc.

Inventor： Xiaofeng Fan ,  Philip H. Li ,  Chung Chun Wan ,  Anup K. Sharma ,  Xiangli Li

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685

Abstract: A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.

公开(公告)号：US20140247378A1

公开(公告)日：2014-09-04

申请号：US13782532

申请日：2013-03-01

Applicant: APPLE INC.

Inventor： Anup K. Sharma ,  Xiaofeng Fan ,  Xiangli Li ,  Chung Chun Wan ,  Chiajen Lee ,  Terry L. Gilton

IPC: H04N5/372

CPC classification number: H01L27/14641 ,  H04N5/35536 ,  H04N5/3591 ,  H04N5/37452

Abstract: A method of operating an image sensor. Charge accumulated in a photodiode during a first sub-exposure may be selectively stored in a storage node responsive to a first control signal. Charge accumulated in the photodiode during a first reset period may be selectively discarded responsive to a second control signal. Charge accumulated in the photodiode during a second sub-exposure may be selectively stored responsive to the first control signal. Charge stored in the storage node from the first and second sub-exposures may be transferred to a floating diffusion node responsive to a third control signal.

Abstract translation: 一种操作图像传感器的方法。 在第一次曝光期间累积在光电二极管中的电荷可以响应于第一控制信号被选择性地存储在存储节点中。 响应于第二控制信号，可以选择性地丢弃在第一复位周期期间在光电二极管中累积的电荷。 可以响应于第一控制信号选择性地存储在第二副曝光期间在光电二极管中累积的电荷。 响应于第三控制信号，可以将存储在第一和第二子曝光中的存储节点中的电荷传送到浮动扩散节点。

公开(公告)号：US09356061B2

公开(公告)日：2016-05-31

申请号：US13959362

申请日：2013-08-05

Applicant: Apple Inc.

Inventor： Xiaofeng Fan ,  Philip H. Li ,  Chung Chun Wan ,  Anup K. Sharma ,  Xiangli Li

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685

Abstract: A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.

Abstract translation: 图像传感器中的像素可以包括设置在一个基板中的光电检测器和存储区域，或者设置在一个基板中的光电检测器和另一个基板中的存储区域。 掩埋的光屏蔽设置在光电检测器和存储区之间。 诸如浮动扩散的感测区域可以与存储区域相邻，其中掩埋的光屏蔽件设置在光电检测器和存储和感测区域之间。 当光电检测器和存储区域设置在分离的基板中时，可以通过掩埋的光屏蔽形成垂直栅极，并且用于开始从光电检测器和存储区域传输电荷。 形成在垂直栅极附近或周围的转移通道提供用于电荷从光电检测器转移到存储区域的通道。

公开(公告)号：US10263032B2

公开(公告)日：2019-04-16

申请号：US15056752

申请日：2016-02-29

Applicant: Apple Inc.

Inventor： Chung Chun Wan

IPC: H01L27/00 ,  H01L27/146 ,  H04N5/225 ,  G06F3/044

Abstract: An image sensor pixel is disclosed. The pixel may include a photodiode having a first region with a first potential and a second region with a second, higher potential, with the second region being offset in depth from the first region in a semiconductor chip. A storage node may be positioned at substantially the same depth as the second region of the photodiode. A storage gate may be operable to transfer charge between the photodiode and the storage node.

公开(公告)号：US20160365380A1

公开(公告)日：2016-12-15

申请号：US15056752

申请日：2016-02-29

Applicant: Apple Inc.

Inventor： Chung Chun Wan

IPC: H01L27/146 ,  H04N5/225

CPC classification number: H01L27/14643 ,  G06F3/044 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/1464 ,  H04N5/2253

Abstract: An image sensor pixel is disclosed. The pixel may include a photodiode having a first region with a first potential and a second region with a second, higher potential, with the second region being offset in depth from the first region in a semiconductor chip. A storage node may be positioned at substantially the same depth as the second region of the photodiode. A storage gate may be operable to transfer charge between the photodiode and the storage node.

Abstract translation: 公开了一种图像传感器像素。 像素可以包括具有第一电位的第一区域和具有第二较高电位的第二区域的光电二极管，其中第二区域在半导体芯片中与第一区域深度偏移。 存储节点可以位于与光电二极管的第二区域基本相同的深度处。 存储门可以可操作以在光电二极管和存储节点之间传送电荷。

公开(公告)号：US20150035028A1

公开(公告)日：2015-02-05

申请号：US13959362

申请日：2013-08-05

Applicant: Apple Inc.

Inventor： Xiaofeng Fan ,  Philip H. Li ,  Chung Chun Wan ,  Anup K. Sharma ,  Xiangli Li

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685

Abstract: A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.

Abstract translation: 图像传感器中的像素可以包括设置在一个基板中的光电检测器和存储区域，或者设置在一个基板中的光电检测器和另一个基板中的存储区域。 掩埋的光屏蔽设置在光电检测器和存储区之间。 诸如浮动扩散的感测区域可以与存储区域相邻，其中掩埋的光屏蔽件设置在光电检测器和存储和感测区域之间。 当光电检测器和存储区域设置在分离的基板中时，可以通过掩埋的光屏蔽形成垂直栅极，并且用于开始从光电检测器和存储区域传输电荷。 形成在垂直栅极附近或周围的转移通道提供用于电荷从光电检测器转移到存储区域的通道。

公开(公告)号：US20140246568A1

公开(公告)日：2014-09-04

申请号：US13783536

申请日：2013-03-04

Applicant: APPLE INC.

Inventor： Chung Chun Wan

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14643 ,  G06F3/044 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/1464 ,  H04N5/2253

Abstract: An image sensor pixel is disclosed. The pixel may include a photodiode having a first region with a first potential and a second region with a second, higher potential, with the second region being offset in depth from the first region in a semiconductor chip. A storage node may be positioned at substantially the same depth as the second region of the photodiode. A storage gate may be operable to transfer charge between the photodiode and the storage node.

Abstract translation: 公开了一种图像传感器像素。 像素可以包括具有第一电位的第一区域和具有第二较高电位的第二区域的光电二极管，其中第二区域在半导体芯片中与第一区域深度偏移。 存储节点可以位于与光电二极管的第二区域基本相同的深度处。 存储门可以可操作以在光电二极管和存储节点之间传送电荷。

公开(公告)号：US10943935B2

公开(公告)日：2021-03-09

申请号：US15682255

申请日：2017-08-21

Applicant: Apple Inc.

Inventor： Xiangli Li ,  Xiaofeng Fan ,  Chung Chun Wan

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/369

Abstract: Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node.