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1.
公开(公告)号:US20240140798A1
公开(公告)日:2024-05-02
申请号:US18550924
申请日:2022-03-18
申请人: AMOTECH CO., LTD.
发明人: Kyu Hwan PARK , Hun CHEONG
IPC分类号: C01B21/068
CPC分类号: C01B21/0682 , C01B21/0687 , C01P2004/62 , C01P2006/32 , C01P2006/40
摘要: Provided is a method for preparing silicon nitride powder for manufacturing a substrate. The method for preparing silicon nitride powder for manufacturing a substrate, according to an embodiment of the present invention, comprises the steps of: preparing mixed raw material powder comprising metallic silicon powder and crystalline phase control powder; preparing the mixed raw material powder into granules having a predetermined particle size; nitrifying the granules at a predetermined temperature ranging from 1,200-1,500° C. while nitrogen gas is applied to the granules at a predetermined pressure; and pulverizing the nitrified granules. According to the method, it is easy to realize powder having an α crystal phase at a desired level, and when this is realized as a substrate, a substrate having compact density can be manufactured.
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2.
公开(公告)号:US20240116822A1
公开(公告)日:2024-04-11
申请号:US18289372
申请日:2022-05-03
申请人: AMOTECH CO., LTD.
发明人: Kyu Hwan PARK , Hun CHEONG
IPC分类号: C04B35/591 , C04B35/622 , C04B35/634
CPC分类号: C04B35/591 , C04B35/62204 , C04B35/6342 , C04B2235/3206 , C04B2235/3225 , C04B2235/3873 , C04B2235/428 , C04B2235/5436 , C04B2235/5445 , C04B2235/6025 , C04B2235/6562 , C04B2235/6567 , C04B2235/6586 , C04B2235/9607
摘要: A method for manufacturing a silicon nitride substrate is provided. The method comprises the steps of: preparing a ceramic composition containing a metal silicon powder and a crystalline phase control powder containing a rare earth element-containing compound and a magnesium-containing compound; manufacturing a sheet-shaped molded body of a slurry prepared by mixing a solvent and an organic binder with the ceramic composition; and performing heat treatment including a nitrification section where heat treatment is performed at a first temperature in the range of 1300-1500° C. together with the application of nitrogen gas to the molded body at a predetermined pressure and a sintering section where heat treatment is performed at a second temperature in the range of 1700-1900° C.
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