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公开(公告)号：US20230335474A1
公开(公告)日：2023-10-19
申请号：US17722682
申请日：2022-04-18
发明人： Zhiqiang Niu , Bum-Seok Suh , Junho Lee , Jong-Mu Lee , Jun Lu , Xiaorong Ge
IPC分类号： H01L23/495 , H01L23/00
CPC分类号： H01L23/49575 , H01L23/49562 , H01L23/49503 , H01L24/16 , H01L23/49555 , H01L2224/48177 , H03K17/6871
摘要： A power module includes a lead frame, a substrate mounted on the lead frame, a first anchor pad, a second anchor pad, a plurality of die pads, and a plurality of transistor dies. The lead frame includes a first lead frame anchored bar attached to the first anchor pad, and a second lead frame anchored bar attached to the second anchor pad. The power module may include a single control IC or two or more control ICs. For the case including a single control IC, the singe control IC controls a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. For the case including two control ICs, a low voltage IC controls a first transistor, a second transistor, and a third transistor and the high voltage IC controls a fourth transistor, a fifth transistor, and a sixth transistor.
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公开(公告)号：US20210098448A1
公开(公告)日：2021-04-01
申请号：US17093097
申请日：2020-11-09
发明人： Bum-Seok Suh , Madhur Bobde , Zhiqiang Niu , Junho Lee , Xiaojing Xu , Zhaorong Zhuang
摘要： An intelligent power module (IPM) comprises a first, second, third and fourth die supporting elements, a first group of insulated gate bipolar transistors (IGBTs), a second group of IGBTs, a first group of super-junction metal-oxide-semiconductor field-effect transistors (MOSFETs), a second group of super-junction MOSFETs, a fifth die supporting element, a low voltage IC, a high voltage IC, and a molding encapsulation. The low and high voltage ICs are attached to the fifth die supporting element. The molding encapsulation encloses the first, second, third and fourth die supporting elements, the first group of IGBTs, the second group of IGBTs, the first group of super-junction MOSFETs, the second group of super-junction MOSFETs, the fifth die supporting element, the low voltage IC, the high voltage IC.
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公开(公告)号：USD1042375S1
公开(公告)日：2024-09-17
申请号：US29838478
申请日：2022-05-12
设计人： Zhiqiang Niu , Bum-Seok Suh , Jong-Mu Lee , Jia-long Yuan , Junho Lee , Xiaorong Ge
摘要： FIG. 1 is a right, front, top perspective view of a power semiconductor module showing our new design;
FIG. 2 is a front elevation view thereof;
FIG. 3 is a left side elevation view thereof;
FIG. 4 is a top plan view thereof; and,
FIG. 5 is a bottom plan view thereof.
The broken lines are shown for environmental purposes only and form no part of the claimed design.
All surfaces not shown form no part of the claimed design.-
公开(公告)号：USD1037187S1
公开(公告)日：2024-07-30
申请号：US29838459
申请日：2022-05-12
设计人： Zhiqiang Niu , Bum-Seok Suh , Jong-Mu Lee , Jia-long Yuan , Junho Lee , Xiaorong Ge
摘要： FIG. 1 is a right, front, top perspective view of a power semiconductor module showing our new design;
FIG. 2 is a front elevation view thereof;
FIG. 3 is a left side elevation view thereof;
FIG. 4 is a top plan view thereof; and,
FIG. 5 is a bottom plan view thereof.
The broken lines are shown for environmental purposes only and form no part of the claimed design.
All surfaces not shown form no part of the claimed design.-
5.发明公开公开(公告)号：US20230282554A1
公开(公告)日：2023-09-07
申请号：US17683354
申请日：2022-03-01
发明人： Zhiqiang Niu , Bum-Seok Suh , Junho Lee , Jong-Mu Lee , Xiaorong Ge
IPC分类号： H01L23/495 , H01L23/31 , H01L23/00
CPC分类号： H01L23/49575 , H01L23/3107 , H01L24/48 , H01L23/49555 , H01L23/49562 , H01L2224/48137 , H02P29/00
摘要： An intelligent power module (IPM) comprises a first transistor die supporting element, a second transistor die supporting element, a third transistor die supporting element, and a fourth transistor die supporting element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a tie bar, a low voltage IC, a high voltage IC, a plurality of leads, a first slanted section, a second slanted section, a third slanted section, a fourth slanted section, a fifth slanted section, and a molding encapsulation. A respective bottom surface of each of the first, second, third, and fourth transistor die supporting elements are exposed from the molding encapsulation.
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公开(公告)号：US11417648B2
公开(公告)日：2022-08-16
申请号：US17093097
申请日：2020-11-09
发明人： Bum-Seok Suh , Madhur Bobde , Zhiqiang Niu , Junho Lee , Xiaojing Xu , Zhaorong Zhuang
摘要： An intelligent power module (IPM) comprises a first, second, third and fourth die supporting elements, a first group of insulated gate bipolar transistors (IGBTs), a second group of IGBTs, a first group of super-junction metal-oxide-semiconductor field-effect transistors (MOSFETs), a second group of super-junction MOSFETs, a fifth die supporting element, a low voltage IC, a high voltage IC, and a molding encapsulation. The low and high voltage ICs are attached to the fifth die supporting element. The molding encapsulation encloses the first, second, third and fourth die supporting elements, the first group of IGBTs, the second group of IGBTs, the first group of super-junction MOSFETs, the second group of super-junction MOSFETs, the fifth die supporting element, the low voltage IC, the high voltage IC.
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