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公开(公告)号：US20210098448A1
公开(公告)日：2021-04-01
申请号：US17093097
申请日：2020-11-09
发明人： Bum-Seok Suh , Madhur Bobde , Zhiqiang Niu , Junho Lee , Xiaojing Xu , Zhaorong Zhuang
摘要： An intelligent power module (IPM) comprises a first, second, third and fourth die supporting elements, a first group of insulated gate bipolar transistors (IGBTs), a second group of IGBTs, a first group of super-junction metal-oxide-semiconductor field-effect transistors (MOSFETs), a second group of super-junction MOSFETs, a fifth die supporting element, a low voltage IC, a high voltage IC, and a molding encapsulation. The low and high voltage ICs are attached to the fifth die supporting element. The molding encapsulation encloses the first, second, third and fourth die supporting elements, the first group of IGBTs, the second group of IGBTs, the first group of super-junction MOSFETs, the second group of super-junction MOSFETs, the fifth die supporting element, the low voltage IC, the high voltage IC.
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公开(公告)号：US11417648B2
公开(公告)日：2022-08-16
申请号：US17093097
申请日：2020-11-09
发明人： Bum-Seok Suh , Madhur Bobde , Zhiqiang Niu , Junho Lee , Xiaojing Xu , Zhaorong Zhuang
摘要： An intelligent power module (IPM) comprises a first, second, third and fourth die supporting elements, a first group of insulated gate bipolar transistors (IGBTs), a second group of IGBTs, a first group of super-junction metal-oxide-semiconductor field-effect transistors (MOSFETs), a second group of super-junction MOSFETs, a fifth die supporting element, a low voltage IC, a high voltage IC, and a molding encapsulation. The low and high voltage ICs are attached to the fifth die supporting element. The molding encapsulation encloses the first, second, third and fourth die supporting elements, the first group of IGBTs, the second group of IGBTs, the first group of super-junction MOSFETs, the second group of super-junction MOSFETs, the fifth die supporting element, the low voltage IC, the high voltage IC.
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