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公开(公告)号：US20230251201A1
公开(公告)日：2023-08-10
申请号：US18166032
申请日：2023-02-08
Inventor： Jaehyun LEE , Jiyun MOON , Jun-Hui CHOI , Seung-il KIM
CPC classification number: G01N21/658 , C23C16/342
Abstract: The present disclosure relates to a method for analyzing a grain boundary of a polycrystalline two-dimensional material including transferring a polycrystalline two-dimensional material onto a substrate for analysis including a single crystalline two-dimensional material formed on a substrate; analyzing the polycrystalline two-dimensional material; depositing a metal thin film on the polycrystalline two-dimensional material; and exfoliating the polycrystalline two-dimensional material.
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