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公开(公告)号:US20230251201A1
公开(公告)日:2023-08-10
申请号:US18166032
申请日:2023-02-08
Inventor: Jaehyun LEE , Jiyun MOON , Jun-Hui CHOI , Seung-il KIM
CPC classification number: G01N21/658 , C23C16/342
Abstract: The present disclosure relates to a method for analyzing a grain boundary of a polycrystalline two-dimensional material including transferring a polycrystalline two-dimensional material onto a substrate for analysis including a single crystalline two-dimensional material formed on a substrate; analyzing the polycrystalline two-dimensional material; depositing a metal thin film on the polycrystalline two-dimensional material; and exfoliating the polycrystalline two-dimensional material.
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公开(公告)号:US20220033265A1
公开(公告)日:2022-02-03
申请号:US17388600
申请日:2021-07-29
Inventor: Jaehyun LEE , Jiyun MOON
Abstract: The present embodiments relate to a method for manufacturing a two-dimensional material using a top-down method, the method includes the steps of preparing a bulk crystal, forming a metal layer on the bulk crystal, and then attaching a thermal release tape on the metal layer, exfoliating a two-dimensional material to which the metal layer and the thermal release tape have been attached from the bulk crystal, transferring the two-dimensional material to which the metal layer and the thermal release tape have been attached onto a substrate, and removing the thermal release tape and the metal layer from the substrate onto which the two-dimensional material has been transferred.
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