公开(公告)号：US20210375619A1

公开(公告)日：2021-12-02

申请号：US17329394

申请日：2021-05-25

Applicant: Research & Business Foundation Sungkyunkwan University ,  Ajou University Industry-Academic Cooperation Foundation

Inventor： Taesung KIM ,  Jaehyun LEE ,  Hyunho SEOK ,  Hyeong U KIM

IPC: H01L21/02 ,  H01L29/267

Abstract: A method for producing a transition metal dichalcogenide-graphene heterojunction composite, the method includes: transferring a graphene onto a flexible substrate; depositing a transition metal layer on the flexible substrate onto which the graphene has been transferred; and injecting a gas containing plasma-treated sulfur (S) onto the flexible substrate onto which the transition metal layer has been deposited, is disclosed.

公开(公告)号：US20230251201A1

公开(公告)日：2023-08-10

申请号：US18166032

申请日：2023-02-08

Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Jaehyun LEE ,  Jiyun MOON ,  Jun-Hui CHOI ,  Seung-il KIM

IPC: G01N21/65 ,  C23C16/34

CPC classification number: G01N21/658 ,  C23C16/342

Abstract: The present disclosure relates to a method for analyzing a grain boundary of a polycrystalline two-dimensional material including transferring a polycrystalline two-dimensional material onto a substrate for analysis including a single crystalline two-dimensional material formed on a substrate; analyzing the polycrystalline two-dimensional material; depositing a metal thin film on the polycrystalline two-dimensional material; and exfoliating the polycrystalline two-dimensional material.

公开(公告)号：US20230250533A1

公开(公告)日：2023-08-10

申请号：US18164874

申请日：2023-02-06

Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Jaehyun LEE ,  Jiyun Moon

IPC: C23C16/50 ,  C23C14/06 ,  C23C14/58 ,  C23C16/52 ,  C23C16/56

CPC classification number: C23C16/50 ,  C23C14/0623 ,  C23C14/0635 ,  C23C14/5806 ,  C23C16/52 ,  C23C16/56 ,  C23C14/3464

Abstract: The present disclosure relates to a preparing method of two-dimensional materials with a controlled number of layer including depositing a metal thin film on a surface of a bulk material; exfoliating a two-dimensional material from the surface of the bulk material together with the metal thin film; and transferring the two-dimensional material onto a substrate, in which the number of layers of the two-dimensional material to be exploited is controlled by controlling an internal stress of the metal thin film.

公开(公告)号：US20220033265A1

公开(公告)日：2022-02-03

申请号：US17388600

申请日：2021-07-29

Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Jaehyun LEE ,  Jiyun MOON

IPC: C01B32/194 ,  C01B32/19 ,  C01G39/06 ,  C30B33/00 ,  C30B29/02 ,  C30B29/46 ,  C30B29/64

Abstract: The present embodiments relate to a method for manufacturing a two-dimensional material using a top-down method, the method includes the steps of preparing a bulk crystal, forming a metal layer on the bulk crystal, and then attaching a thermal release tape on the metal layer, exfoliating a two-dimensional material to which the metal layer and the thermal release tape have been attached from the bulk crystal, transferring the two-dimensional material to which the metal layer and the thermal release tape have been attached onto a substrate, and removing the thermal release tape and the metal layer from the substrate onto which the two-dimensional material has been transferred.