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    SWITCHING OF PARALLELED REVERSE CONDUCTING IGBT AND WIDE BANDGAP SWITCH
    1.
    发明申请
    SWITCHING OF PARALLELED REVERSE CONDUCTING IGBT AND WIDE BANDGAP SWITCH 审中-公开

    公开(公告)号：US20190273493A1

    公开(公告)日：2019-09-05

    申请号：US16411716

    申请日：2019-05-14

    申请人： ABB Schweiz AG

    发明人： Umamaheswara Vemulapati ,  Ulrich Schlapbach ,  Munaf Rahimo

    IPC分类号： H03K17/567 ,  H03K17/687

    摘要： A semiconductor module comprises reverse conducting IGBT connected in parallel with a wide bandgap MOSFET, wherein each of the reverse conducting IGBT and the wide bandgap MOSFET comprises an internal anti-parallel diode. A method for operating a semiconductor module with the method including the steps of: determining a reverse conduction start time, in which the semiconductor module starts to conduct a current in a reverse direction, which reverse direction is a conducting direction of the internal anti-parallel diodes; applying a positive gate signal to the wide bandgap MOSFET after the reverse conduction start time; determining a reverse conduction end time based on the reverse conduction start time, in which the semiconductor module ends to conduct a current in the reverse direction; and applying a reduced gate signal to the wide bandgap MOSFET a blanking time interval before the reverse conduction end time, the reduced gate signal being adapted for switching the wide bandgap MOSFET

    Semiconductor module
    2.
    发明授权
    Semiconductor module 有权

    公开(公告)号：US10276552B2

    公开(公告)日：2019-04-30

    申请号：US15967233

    申请日：2018-04-30

    申请人： ABB Schweiz AG

    发明人： Samuel Hartmann ,  Ulrich Schlapbach

    IPC分类号： H01L25/18 ,  H01L25/07 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538

    摘要： A semiconductor module, comprises a substrate plate; a semiconductor switch chip and a diode chip attached to a collector conductor on the substrate plate, wherein the diode chip is electrically connected antiparallel to the semiconductor switch chip; wherein the semiconductor switch chip is electrically connected via bond wires to an emitter conductor on the substrate plate providing a first emitter current path, which emitter conductor is arranged oppositely to the semiconductor switch chip with respect to the diode chip; wherein a gate electrode of the semiconductor switch chip is electrically connected via a bond wire to a gate conductor on the substrate plate providing a gate current path, which gate conductor is arranged oppositely to the semiconductor switch chip with respect to the diode chip; and wherein a protruding area of the emitter conductor runs besides the diode chip towards the first semiconductor switch chip and the first semiconductor switch chip is directly connected via a bond wire with the protruding area providing an additional emitter current path running at least partially along the gate current path. The semiconductor switch chip is a first semiconductor switch chip and the diode chip is a first diode chip, which are arranged in a first row. The semiconductor module comprises further a second row of a second semiconductor switch chip and a second diode chip attached to the collector conductor, wherein the diode chip of each row is electrically connected antiparallel to the semiconductor switch chip of the same row and the first and second rows are electrically connected in parallel. The first semiconductor switch chip is arranged besides the second diode chip and the second semiconductor chip is arranged besides the first diode chip.