公开(公告)号：US09112264B2

公开(公告)日：2015-08-18

申请号：US13619100

申请日：2012-09-14

Applicant: Sy-been Wang ,  Yu-Cheng Chen ,  Ching-Wei Ling ,  Chih-pao Lin

Inventor： Sy-been Wang ,  Yu-Cheng Chen ,  Ching-Wei Ling ,  Chih-pao Lin

IPC: H01Q3/02 ,  H01Q3/24 ,  H01Q9/06 ,  H01Q19/30

CPC classification number: H01Q3/24 ,  H01Q9/065 ,  H01Q19/30

Abstract: A switched beam smart antenna apparatus is disclosed including: a first, a second, a third, a fourth, a fifth, a sixth, a seventh, and an eighth beam adjusting elements; a first, a second, a third, and a fourth beam control modules; a first, a second, a third, and a fourth radiation strips positioned within an area surrounded by the first to eighth beam adjusting elements; and a radiation strip control module for selecting either the first and second radiation strips or the third and fourth radiation strips to transmit signals. When the first beam control module conducts the first and second beam adjusting elements, the third beam control module does not conduct the fifth and sixth beam adjusting elements. When the second beam control module conducts the third and fourth beam adjusting elements, the fourth beam control module does not conduct the seventh and eighth beam adjusting elements.

Abstract translation: 公开了一种切换波束智能天线装置，包括：第一，第二，第三，第四，第五，第六，第七和第八波束调节元件; 第一，第二，第三和第四光束控制模块; 位于由第一至第八光束调节元件包围的区域内的第一，第二，第三和第四辐射条; 以及用于选择第一和第二辐射带或第三和第四辐射带以发射信号的辐射带控制模块。 当第一光束控制模块传导第一和第二光束调节元件时，第三光束控制模块不传导第五和第六光束调节元件。 当第二光束控制模块传导第三和第四光束调节元件时，第四光束控制模块不传导第七和第八光束调节元件。

公开(公告)号：US08872184B2

公开(公告)日：2014-10-28

申请号：US12712209

申请日：2010-02-25

Applicant: Yu-Cheng Chen ,  Chih-Hung Lin ,  Yi-Hui Li

Inventor： Yu-Cheng Chen ,  Chih-Hung Lin ,  Yi-Hui Li

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1339 ,  G02F1/1368 ,  G02F1/1362

CPC classification number: H01L27/1288 ,  G02F1/13394 ,  G02F1/13458 ,  G02F1/1368 ,  G02F2001/136231 ,  H01L27/1214 ,  H01L27/1248

Abstract: An array structure, which includes a TFT, a passivation layer, a pixel electrode, a first connecting layer and a first spacer is provided. The TFT includes a gate, a source and a drain. The passivation layer overlays the TFT. The pixel electrode is located on the passivation layer. The first connecting layer is located on the pixel electrode and electrically connected to the pixel electrode and the drain. The first spacer is located on the first connecting layer.

Abstract translation: 提供了包括TFT，钝化层，像素电极，第一连接层和第一间隔物的阵列结构。 TFT包括栅极，源极和漏极。 钝化层覆盖TFT。 像素电极位于钝化层上。 第一连接层位于像素电极上并与像素电极和漏极电连接。 第一间隔件位于第一连接层上。

公开(公告)号：US08516102B2

公开(公告)日：2013-08-20

申请号：US12843962

申请日：2010-07-27

Applicant: Che-Hung Chen ,  Yu-Cheng Chen ,  Tsun-Li Hung ,  Shang-Feng Chiang ,  Chih-Chien Hsu

Inventor： Che-Hung Chen ,  Yu-Cheng Chen ,  Tsun-Li Hung ,  Shang-Feng Chiang ,  Chih-Chien Hsu

IPC: G06F15/173 ,  G06F15/177 ,  G06F15/16

CPC classification number: G06F15/161

Abstract: A computer managing method includes the following steps. Firstly, a blade server system with M blade server units, which includes a number of server blades and a modular management blade (MMB), is provided, wherein the M MMBs are connected with each other via network paths and M is a natural number greater than 1. Then a master MMB among the M MMBs are selected in response to first user operation event. Next, the network parameter data of the master MMB are set in response to second user operation event. Then network topology of the master MMB and the rest of M−1 MMBs are obtained via the master MMB. After that, the rest of M−1 MMBs are driven for utilizing a network protocol service so that the M−1 MMBs are able to receive network parameter data from the master MMB and carry out parameter setting accordingly.

Abstract translation: 计算机管理方法包括以下步骤。 首先，提供了具有M个刀片服务器单元的刀片服务器系统，其包括多个服务器刀片和模块化管理刀片（MMB），其中M MMB通过网络路径相互连接，M是自然数更大 然后响应于第一用户操作事件选择M MMB中的主MMB。 接下来，响应于第二用户操作事件来设置主MMB的网络参数数据。 然后通过主MMB获得主MMB和其余M-1 MMB的网络拓扑。 之后，M-1 MMB的其余部分被驱动以利用网络协议服务，使得M-1 MMB能够从主MMB接收网络参数数据并相应地执行参数设置。

公开(公告)号：US20130069826A1

公开(公告)日：2013-03-21

申请号：US13619100

申请日：2012-09-14

Applicant: Sy-been WANG ,  Yu-Cheng Chen ,  Ching-Wei Ling ,  Chih-pao Lin

Inventor： Sy-been WANG ,  Yu-Cheng Chen ,  Ching-Wei Ling ,  Chih-pao Lin

IPC: H01Q3/24

CPC classification number: H01Q3/24 ,  H01Q9/065 ,  H01Q19/30

Abstract: A switched beam smart antenna apparatus is disclosed including: a first, a second, a third, a fourth, a fifth, a sixth, a seventh, and an eighth beam adjusting elements; a first, a second, a third, and a fourth beam control modules; a first, a second, a third, and a fourth radiation strips positioned within an area surrounded by the first to eighth beam adjusting elements; and a radiation strip control module for selecting either the first and second radiation strips or the third and fourth radiation strips to transmit signals. When the first beam control module conducts the first and second beam adjusting elements, the third beam control module does not conduct the fifth and sixth beam adjusting elements. When the second beam control module conducts the third and fourth beam adjusting elements, the fourth beam control module does not conduct the seventh and eighth beam adjusting elements.

Abstract translation: 公开了一种切换波束智能天线装置，包括：第一，第二，第三，第四，第五，第六，第七和第八波束调节元件; 第一，第二，第三和第四光束控制模块; 位于由第一至第八光束调节元件包围的区域内的第一，第二，第三和第四辐射条; 以及用于选择第一和第二辐射带或第三和第四辐射带以发射信号的辐射带控制模块。 当第一光束控制模块传导第一和第二光束调节元件时，第三光束控制模块不传导第五和第六光束调节元件。 当第二光束控制模块传导第三和第四光束调节元件时，第四光束控制模块不传导第七和第八光束调节元件。

公开(公告)号：US08357570B2

公开(公告)日：2013-01-22

申请号：US13052114

申请日：2011-03-21

Applicant: Yu-Cheng Chen

Inventor： Yu-Cheng Chen

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L27/1288 ,  H01L27/1214

Abstract: A method for fabricating a pixel structure includes providing a substrate having a pixel area. A first metal layer, a gate insulator and a semiconductor layer are formed on the substrate and patterned by using a first half-tone mask or a gray-tone mask to form a transistor pattern, a lower capacitance pattern and a lower circuit pattern. Next, a dielectric layer and an electrode layer both covering the three patterns are sequentially formed and patterned to expose a part of the lower circuit pattern, a part of the lower capacitance pattern and a source/drain region of the transistor pattern. A second metal layer formed on the electrode layer and the electrode layer are patterned by using a second half-tone mask or the gray-tone mask to form an upper circuit pattern, a source/drain pattern and an upper capacitance pattern. A portion of the electrode layer constructs a pixel electrode.

Abstract translation: 一种制造像素结构的方法包括提供具有像素区域的衬底。 在衬底上形成第一金属层，栅极绝缘体和半导体层，并通过使用第一半色调掩模或灰色蒙版掩模进行图案化以形成晶体管图案，较低的电容图案和较低的电路图案。 接下来，依次形成覆盖三个图案的电介质层和电极层，并对其进行图案化以暴露下部电路图案的一部分，下部电容图案的一部分和晶体管图案的源极/漏极区域。 通过使用第二半色调掩模或灰度蒙版来形成在电极层和电极层上形成的第二金属层，以形成上部电路图案，源极/漏极图案和上部电容图案。 电极层的一部分构成像素电极。

公开(公告)号：US20120223312A1

公开(公告)日：2012-09-06

申请号：US13471713

申请日：2012-05-15

Applicant: Yu-Cheng Chen

Inventor： Yu-Cheng Chen

IPC: H01L29/786

CPC classification number: H01L27/1248 ,  G02F1/136213 ,  H01L27/1255

Abstract: A semiconductor structure of a display device and the method for fabricating the same are provided. The semiconductor structure is formed on a substrate having a TFT region and a pixel capacitor region thereon. A TFT, including a gate electrode, a source electrode, a drain electrode, a channel layer, and a gate insulating layer, is formed on the TFT region of the substrate. A pixel capacitor is formed on the pixel capacitor region, wherein the pixel capacitor comprises a bottom electrode formed on a bottom dielectric layer, an interlayer dielectric layer formed on the bottom electrode, a top electrode formed on the interlayer dielectric layer, a contact plug passing through the interlayer dielectric layer and electrically connected to the top and bottom electrodes, a capacitor dielectric layer formed on the top electrode, a transparent electrode formed on the capacitor dielectric layer and electrically connected to the drain electrode.

Abstract translation: 提供了一种显示装置的半导体结构及其制造方法。 半导体结构形成在其上具有TFT区域和像素电容器区域的基板上。 在基板的TFT区域上形成包括栅电极，源电极，漏电极，沟道层和栅极绝缘层的TFT。 像素电容器形成在像素电容器区域上，其中像素电容器包括形成在底部电介质层上的底部电极，形成在底部电极上的层间电介质层，形成在层间电介质层上的顶部电极， 通过所述层间绝缘层和电连接到所述顶部和底部电极，形成在所述顶部电极上的电容器电介质层，形成在所述电容器电介质层上并电连接到所述漏极的透明电极。

公开(公告)号：US08202770B2

公开(公告)日：2012-06-19

申请号：US12815513

申请日：2010-06-15

Applicant: Yu-Cheng Chen

Inventor： Yu-Cheng Chen

IPC: H01L21/00

CPC classification number: H01L27/1248 ,  G02F1/136213 ,  H01L27/1255

Abstract: A semiconductor structure of a display device and the method for fabricating the same are provided. The semiconductor structure is formed on a substrate having a TFT region and a pixel capacitor region thereon. A TFT, including a gate electrode, a source electrode, a drain electrode, a channel layer, and a gate insulating layer, is formed on the TFT region of the substrate. A pixel capacitor is formed on the pixel capacitor region, wherein the pixel capacitor comprises a bottom electrode formed on a bottom dielectric layer, an interlayer dielectric layer formed on the bottom electrode, a top electrode formed on the interlayer dielectric layer, a contact plug passing through the interlayer dielectric layer and electrically connected to the top and bottom electrodes, a capacitor dielectric layer formed on the top electrode, a transparent electrode formed on the capacitor dielectric layer and electrically connected to the drain electrode.

Abstract translation: 提供了一种显示装置的半导体结构及其制造方法。 半导体结构形成在其上具有TFT区域和像素电容器区域的基板上。 在基板的TFT区域上形成包括栅电极，源电极，漏电极，沟道层和栅极绝缘层的TFT。 像素电容器形成在像素电容器区域上，其中像素电容器包括形成在底部电介质层上的底部电极，形成在底部电极上的层间电介质层，形成在层间电介质层上的顶部电极， 通过所述层间绝缘层和电连接到所述顶部和底部电极，形成在所述顶部电极上的电容器电介质层，形成在所述电容器电介质层上并电连接到所述漏极的透明电极。

公开(公告)号：US08198149B2

公开(公告)日：2012-06-12

申请号：US13349586

申请日：2012-01-13

Applicant: Ming-Wei Sun ,  Chen-Yueh Li ,  Yu-Cheng Chen ,  Chia-Tien Peng

Inventor： Ming-Wei Sun ,  Chen-Yueh Li ,  Yu-Cheng Chen ,  Chia-Tien Peng

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L27/14692 ,  H01L27/1214 ,  H01L27/1288 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14645

Abstract: A method for fabricating an active device array substrate is provided. A first patterned semiconductor layer, a gate insulator, a first patterned conductive layer and a first dielectric layer is sequentially formed on a substrate. First contact holes exposing the first patterned semiconductor layer are formed in the first dielectric layer and the gate insulator. A second patterned conductive layer and a second patterned semiconductor layer disposed thereon are simultaneously formed on the first dielectric layer. The second conductive layer includes contact conductors and a bottom electrode. The second patterned semiconductor layer includes an active layer. A second dielectric layer having second contact holes is formed on the first dielectric layer, wherein a portion of the second contact holes exposes the active layer. A third patterned conductive layer electrically connected to the active layer through a portion of the second contact holes is formed on the second dielectric layer.

Abstract translation: 提供一种用于制造有源器件阵列衬底的方法。 第一图案化半导体层，栅极绝缘体，第一图案化导电层和第一介电层依次形成在衬底上。 暴露第一图案化半导体层的第一接触孔形成在第一介电层和栅极绝缘体中。 第一图案化导电层和设置在其上的第二图案化半导体层同时形成在第一介电层上。 第二导电层包括接触导体和底部电极。 第二图案化半导体层包括有源层。 具有第二接触孔的第二电介质层形成在第一电介质层上，其中一部分第二接触孔露出有源层。 通过第二接触孔的一部分电连接到有源层的第三图案化导电层形成在第二介电层上。

公开(公告)号：US20120057090A1

公开(公告)日：2012-03-08

申请号：US13030133

申请日：2011-02-18

Applicant: Yu-Cheng Chen ,  Yi-Hui Li ,  Chih-Hung Lin ,  Maw-Song Chen

Inventor： Yu-Cheng Chen ,  Yi-Hui Li ,  Chih-Hung Lin ,  Maw-Song Chen

IPC: G02F1/1343

CPC classification number: G02F1/136213 ,  G02F1/133707

Abstract: An active device, a pixel structure, and a display panel are provided. The pixel structure includes a scan line, a data line, an active device, a gate insulating layer, a pixel electrode, a capacitor electrode, and a capacitor dielectric layer. The active device includes a gate, a channel, a source, and a drain. The gate is electrically connected to the scan line. The source is electrically connected to the data line. The gate insulating layer is disposed between the gate and the channel. The pixel electrode is electrically connected to the drain. The capacitor electrode is located on the gate insulating layer. The capacitor dielectric layer is located between the capacitor electrode and the drain.

Abstract translation: 提供有源器件，像素结构和显示面板。 像素结构包括扫描线，数据线，有源器件，栅极绝缘层，像素电极，电容器电极和电容器电介质层。 有源器件包括栅极，沟道，源极和漏极。 栅极电连接到扫描线。 源电连接到数据线。 栅极绝缘层设置在栅极和沟道之间。 像素电极电连接到漏极。 电容电极位于栅极绝缘层上。 电容器电介质层位于电容器电极和漏极之间。

公开(公告)号：US20120023210A1

公开(公告)日：2012-01-26

申请号：US12960103

申请日：2010-12-03

Applicant: Te-Hsien LAI ,  Yu-Cheng Chen ,  Ching-Fu Kung

Inventor： Te-Hsien LAI ,  Yu-Cheng Chen ,  Ching-Fu Kung

IPC: G06F15/173

CPC classification number: H04L29/08072 ,  G06F9/46 ,  G06F11/3055 ,  G06F15/17325 ,  H04L69/329

Abstract: An operation method for a server system includes: (A) under control of a hardware abstraction layer (HAL), a plurality of node management units sharing a hardware resource; (B) if one of the node management units needs to use the hardware resource, the node management unit sending an instruction or a data to the HAL and accordingly the HAL using the hardware resource in represent of the node management unit; and (C) if an external instruction is received, the HAL identifying which transmission port of the hardware resource receives the external instruction, so to send the external instruction to a corresponding node management unit, and after the external instruction is executed, the corresponding node management unit sending back an information to the HAL so that the HAL sends back the information to an external system administrator.

Abstract translation: 一种服务器系统的操作方法，包括：（A）在硬件抽象层（HAL）的控制下，共享硬件资源的多个节点管理单元; （B）如果其中一个节点管理单元需要使用硬件资源，则节点管理单元使用代表节点管理单元的硬件资源向HAL发送指令或数据，并相应地发送HAL; 和（C）如果接收到外部指令，则HAL识别硬件资源的哪个传输端口接收外部指令，以便将外部指令发送到对应的节点管理单元，并且在执行外部指令之后，对应的节点 管理单元向HAL发回信息，以便HAL将信息发送回外部系统管理员。