公开(公告)号：US08293545B2

公开(公告)日：2012-10-23

申请号：US11927658

申请日：2007-10-29

Applicant: Hai Cong ,  Yan Shan Li ,  Chun Hui Low ,  Yelehanka Ramachandramurthy Pradeep ,  Liang Choo Hsia

Inventor： Hai Cong ,  Yan Shan Li ,  Chun Hui Low ,  Yelehanka Ramachandramurthy Pradeep ,  Liang Choo Hsia

IPC: G01R31/26 ,  H01L21/66 ,  H01L23/58 ,  H01L29/10

CPC classification number: H01L23/585 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Test structures including test trenches are used to define critical dimension of trenches in a via level of an integrated circuit to produce substantially the same depth. The trenches are formed at the periphery of the IC to serve as guard rings.

Abstract translation: 包括测试沟槽的测试结构用于定义集成电路的通孔级中的沟槽的临界尺寸，以产生基本上相同的深度。 沟槽形成在IC的外围，用作保护环。