METHOD FOR PACKAGING SEMICONDUCTORS AT WAFER LEVEL
    4.
    发明申请
    METHOD FOR PACKAGING SEMICONDUCTORS AT WAFER LEVEL 有权
    用于在水平层包装半导体的方法

    公开(公告)号:US20120009735A1

    公开(公告)日:2012-01-12

    申请号:US13243179

    申请日:2011-09-23

    IPC分类号: H01L21/50

    摘要: A method for packaging a plurality of semiconductor devices formed in a surface portion of a semiconductor wafer. The method includes: lithographically forming, in a first lithographically processable material disposed on the surface portion of the semiconductor wafer, device exposing openings to expose the devices and electrical contact pad openings to expose electrical contact pads for devices; and mounting a support having a rigid dielectric layer formed on a selected portion of the support, such rigid dielectric layer comprising a second lithographically processable material, such rigid material being suspended over the device exposing openings and removed from portions of the support disposed over the electrical contacts pads openings in the first lithographically processable material. The support is released and removed from the second lithographically processable material, leaving the second photolithographically processable material bonded to the first photolithographically processable material.

    摘要翻译: 一种用于封装形成在半导体晶片的表面部分中的多个半导体器件的方法。 该方法包括:在设置在半导体晶片的表面部分上的第一可光刻处理的材料中光刻形成设备,暴露出所述器件和电接触焊盘开口的开口以暴露用于器件的电接触焊盘; 以及安装具有形成在所述支撑件的选定部分上的刚性介电层的支撑件,所述刚性介电层包括第二可光刻处理的材料,所述刚性材料悬挂在所述装置上,露出开口并从所述电气 第一可光刻处理材料中的接触垫开口。 支撑体从第二种​​可光刻加工的材料中释放并除去,留下第二光刻加工材料结合到第一可光刻加工的材料上。

    Packaging semiconductors at wafer level
    5.
    发明授权
    Packaging semiconductors at wafer level 有权
    在晶圆级封装半导体

    公开(公告)号:US08035219B2

    公开(公告)日:2011-10-11

    申请号:US12175692

    申请日:2008-07-18

    IPC分类号: H01L23/12 H01L21/00

    摘要: A method for packaging a plurality of semiconductor devices formed in a surface portion of a semiconductor wafer. The method includes: lithographically forming, in a first lithographically processable material disposed on the surface portion of the semiconductor wafer, device exposing openings to expose the devices and electrical contact pad openings to expose electrical contact pads for devices; and mounting a support having a rigid dielectric layer formed on a selected portion of the support, such rigid dielectric layer comprising a second lithographically processable material, such rigid material being suspended over the device exposing openings and removed from portions of the support disposed over the electrical contacts pads openings in the first lithographically processable material. The support is released and removed from the second lithographically processable material, leaving the second photolithographically processable material bonded to the first photolithographically processable material.

    摘要翻译: 一种用于封装形成在半导体晶片的表面部分中的多个半导体器件的方法。 该方法包括:在设置在半导体晶片的表面部分上的第一可光刻处理的材料中光刻形成设备,暴露出所述器件和电接触焊盘开口的开口以暴露用于器件的电接触焊盘; 以及安装具有形成在所述支撑件的选定部分上的刚性介电层的支撑件,所述刚性介电层包括第二可光刻处理的材料,所述刚性材料悬挂在所述装置上,露出开口并从所述电气 第一可光刻处理材料中的接触垫开口。 支撑体从第二种​​可光刻加工的材料中释放并除去,留下第二光刻加工材料结合到第一可光刻加工的材料上。

    Method for packaging semiconductors at wafer level
    7.
    发明授权
    Method for packaging semiconductors at wafer level 有权
    在晶圆级封装半导体的方法

    公开(公告)号:US08178391B2

    公开(公告)日:2012-05-15

    申请号:US13243179

    申请日:2011-09-23

    IPC分类号: H01L21/00 H01L23/12

    摘要: A method for packaging a plurality of semiconductor devices formed in a surface portion of a semiconductor wafer. The method includes: lithographically forming, in a first lithographically processable material disposed on the surface portion of the semiconductor wafer, device exposing openings to expose the devices and electrical contact pad openings to expose electrical contact pads for devices; and mounting a support having a rigid dielectric layer formed on a selected portion of the support, such rigid dielectric layer comprising a second lithographically processable material, such rigid material being suspended over the device exposing openings and removed from portions of the support disposed over the electrical contacts pads openings in the first lithographically processable material. The support is released and removed from the second lithographically processable material, leaving the second photolithographically processable material bonded to the first photolithographically processable material.

    摘要翻译: 一种用于封装形成在半导体晶片的表面部分中的多个半导体器件的方法。 该方法包括:在设置在半导体晶片的表面部分上的第一可光刻处理的材料中光刻形成设备,暴露出所述器件和电接触焊盘开口的开口以暴露用于器件的电接触焊盘; 以及安装具有形成在所述支撑件的选定部分上的刚性介电层的支撑件,所述刚性介电层包括第二可光刻处理的材料,所述刚性材料悬挂在所述装置上,露出开口并从所述电气 第一可光刻处理材料中的接触垫开口。 支撑体从第二种​​可光刻加工的材料中释放并除去,留下第二光刻加工材料结合到第一可光刻加工的材料上。

    METHOD FOR PACKAGING SEMICONDUCTORS AT A WAFER LEVEL
    8.
    发明申请
    METHOD FOR PACKAGING SEMICONDUCTORS AT A WAFER LEVEL 有权
    在半导体层上封装半导体的方法

    公开(公告)号:US20100013088A1

    公开(公告)日:2010-01-21

    申请号:US12175692

    申请日:2008-07-18

    IPC分类号: H01L23/14 H01L21/58

    摘要: A method for packaging a plurality of semiconductor devices formed in a surface portion of a semiconductor wafer. The method includes: lithographically forming, in a first lithographically processable material disposed on the surface portion of the semiconductor wafer, device exposing openings to expose the devices and electrical contact pad openings to expose electrical contact pads for devices; and mounting a support having a rigid dielectric layer formed on a selected portion of the support, such rigid dielectric layer comprising a second lithographically processable material, such rigid material being suspended over the device exposing openings and removed from portions of the support disposed over the electrical contacts pads openings in the first lithographically processable material. The support is released and removed from the second lithographically processable material, leaving the second photolithographically processable material bonded to the first photolithographically processable material.

    摘要翻译: 一种用于封装形成在半导体晶片的表面部分中的多个半导体器件的方法。 该方法包括:在设置在半导体晶片的表面部分上的第一可光刻处理的材料中光刻形成设备,暴露出所述器件和电接触焊盘开口的开口以暴露用于器件的电接触焊盘; 以及安装具有形成在所述支撑体的选定部分上的刚性介电层的支撑件,所述刚性介电层包括第二可光刻处理的材料,所述刚性材料悬挂在所述装置上,露出开口并从所述电气 第一可光刻处理材料中的接触垫开口。 支撑体从第二种​​可光刻加工的材料中释放并除去,留下第二光刻加工材料结合到第一可光刻加工的材料上。