公开(公告)号：US08133782B2

公开(公告)日：2012-03-13

申请号：US13028730

申请日：2011-02-16

申请人： Hiroshi Akahori ,  Wakako Takeuchi ,  Atsuhiro Sato

发明人： Hiroshi Akahori ,  Wakako Takeuchi ,  Atsuhiro Sato

IPC分类号： H01L21/8247

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42336

摘要： A memory device includes a semiconductor substrate, memory elements formed above the substrate in rows and columns, bit lines and word lines selectively connected with the memory elements in the respective columns and rows, each memory element including, a first gate insulator formed above the substrate, a charge accumulation layer formed on the first gate insulator, a second gate insulator formed on the charge accumulation layer, and a control electrode formed on the second gate insulator, wherein a ratio r/d is not smaller than 0.5, where r: a radius of curvature of an upper corner portion or surface roughness of the charge accumulation layer and d: an equivalent oxide thickness of the second gate insulator in a cross section along a direction vertical to the bit lines.

摘要翻译： 存储器件包括：半导体衬底，以行和列形成在衬底上方的存储元件，位线和字线与各个列和行中的存储元件选择性地连接，每个存储元件包括形成在衬底上的第一栅极绝缘体 ，形成在第一栅极绝缘体上的电荷累积层，形成在电荷累积层上的第二栅极绝缘体和形成在第二栅极绝缘体上的控制电极，其中比率r / d不小于0.5，其中r：a 上角部的曲率半径或电荷蓄积层的表面粗糙度，d：沿着与位线垂直的方向的截面中的第二栅极绝缘体的等效氧化物厚度。

公开(公告)号：US20120032253A1

公开(公告)日：2012-02-09

申请号：US13277255

申请日：2011-10-20

申请人： Hiroshi Akahori ,  Wakako Takeuchi

发明人： Hiroshi Akahori ,  Wakako Takeuchi

IPC分类号： H01L29/792

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A nonvolatile semiconductor memory has a semiconductor substrate, a first insulating film formed on a channel region on a surface portion of the semiconductor substrate, a charge accumulating layer formed on the first insulating film, a second insulating film formed on the charge accumulating layer, a control gate electrode formed on the second insulating film, and a third insulating film including an Si—N bond that is formed on a bottom surface and side surfaces of the charge accumulating layer.

摘要翻译： 非易失性半导体存储器具有半导体衬底，形成在半导体衬底的表面部分上的沟道区上的第一绝缘膜，形成在第一绝缘膜上的电荷累积层，形成在电荷累积层上的第二绝缘膜， 形成在第二绝缘膜上的控制栅电极和形成在电荷累积层的底表面和侧表面上的包含Si-N键的第三绝缘膜。

公开(公告)号：US08071444B2

公开(公告)日：2011-12-06

申请号：US12923646

申请日：2010-09-30

申请人： Hiroshi Akahori ,  Wakako Takeuchi

发明人： Hiroshi Akahori ,  Wakako Takeuchi

IPC分类号： H01L21/336

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A nonvolatile semiconductor memory has a semiconductor substrate, a first insulating film formed on a channel region on a surface portion of the semiconductor substrate, a charge accumulating layer formed on the first insulating film, a second insulating film formed on the charge accumulating layer, a control gate electrode formed on the second insulating film, and a third insulating film including an Si—N bond that is formed on a bottom surface and side surfaces of the charge accumulating layer.

公开(公告)号：US07906804B2

公开(公告)日：2011-03-15

申请号：US11798888

申请日：2007-05-17

申请人： Hiroshi Akahori ,  Wakako Takeuchi ,  Atsuhiro Sato

发明人： Hiroshi Akahori ,  Wakako Takeuchi ,  Atsuhiro Sato

IPC分类号： H01L29/78

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42336

摘要： A memory device includes a semiconductor substrate, memory elements formed above the substrate in rows and columns, bit lines and word lines selectively connected with the memory elements in the respective columns and rows, each memory element including, a first gate insulator formed above the substrate, a charge accumulation layer formed on the first gate insulator, a second gate insulator formed on the charge accumulation layer, and a control electrode formed on the second gate insulator, wherein a ratio r/d is not smaller than 0.5, where r: a radius of curvature of an upper corner portion or surface roughness of the charge accumulation layer and d: an equivalent oxide thickness of the second gate insulator in a cross section along a direction vertical to the bit lines.

摘要翻译： 存储器件包括：半导体衬底，以行和列形成在衬底上方的存储元件，位线和字线与各个列和行中的存储元件选择性地连接，每个存储元件包括形成在衬底上的第一栅极绝缘体 ，形成在第一栅极绝缘体上的电荷累积层，形成在电荷累积层上的第二栅极绝缘体和形成在第二栅极绝缘体上的控制电极，其中比率r / d不小于0.5，其中r：a 上角部的曲率半径或电荷蓄积层的表面粗糙度，d：沿着与位线垂直的方向的截面中的第二栅极绝缘体的等效氧化物厚度。

公开(公告)号：US07829950B2

公开(公告)日：2010-11-09

申请号：US12037693

申请日：2008-02-26

申请人： Hiroshi Akahori ,  Wakako Takeuchi

发明人： Hiroshi Akahori ,  Wakako Takeuchi

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A nonvolatile semiconductor memory has a semiconductor substrate, a first insulating film formed on a channel region on a surface portion of the semiconductor substrate, a charge accumulating layer formed on the first insulating film, a second insulating film formed on the charge accumulating layer, a control gate electrode formed on the second insulating film, and a third insulating film including an Si—N bond that is formed on a bottom surface and side surfaces of the charge accumulating layer.

摘要翻译： 非易失性半导体存储器具有半导体衬底，形成在半导体衬底的表面部分上的沟道区上的第一绝缘膜，形成在第一绝缘膜上的电荷累积层，形成在电荷累积层上的第二绝缘膜， 形成在第二绝缘膜上的控制栅电极和形成在电荷累积层的底表面和侧表面上的包含Si-N键的第三绝缘膜。

公开(公告)号：US20080296663A1

公开(公告)日：2008-12-04

申请号：US12113245

申请日：2008-05-01

申请人： Wakako Takeuchi ,  Hiroshi Akahori

发明人： Wakako Takeuchi ,  Hiroshi Akahori

IPC分类号： H01L29/792 ,  H01L21/28

CPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/40114 ,  H01L29/42324

摘要： A semiconductor device according to an embodiment of the present invention includes a first gate insulator, a first gate electrode, a second gate insulator, and a second gate electrode. Regarding the thickness of the second gate insulator, the thickness of the insulator, on a first edge of the first gate electrode in the word-line direction, and the thickness of the insulator, on a second edge of the first gate electrode in the word-line direction, are larger than, the thickness of the insulator, on the upper surface of the first gate electrode, the thickness of the insulator, on the first side of the first gate electrode in the word-line direction, and the thickness of the insulator, on the second side of the first gate electrode in the word-line direction.

摘要翻译： 根据本发明实施例的半导体器件包括第一栅极绝缘体，第一栅极电极，第二栅极绝缘体和第二栅极电极。 关于第二栅极绝缘体的厚度，在字线方向上的第一栅电极的第一边缘上的绝缘体的厚度和绝缘体的厚度在该字中的第一栅电极的第二边缘上 在第一栅电极的上表面上的绝缘体的厚度，绝缘体的厚度，第一栅极的第一侧的字线方向上的厚度，以及绝缘体的厚度 绝缘体，位于第一栅电极的第二侧的字线方向上。

公开(公告)号：US20080203481A1

公开(公告)日：2008-08-28

申请号：US12037693

申请日：2008-02-26

申请人： Hiroshi AKAHORI ,  Wakako Takeuchi

发明人： Hiroshi AKAHORI ,  Wakako Takeuchi

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A nonvolatile semiconductor memory has a semiconductor substrate, a first insulating film formed on a channel region on a surface portion of the semiconductor substrate, a charge accumulating layer formed on the first insulating film, a second insulating film formed on the charge accumulating layer, a control gate electrode formed on the second insulating film, and a third insulating film including an Si—N bond that is formed on a bottom surface and side surfaces of the charge accumulating layer.

摘要翻译： 非易失性半导体存储器具有半导体衬底，形成在半导体衬底的表面部分上的沟道区上的第一绝缘膜，形成在第一绝缘膜上的电荷累积层，形成在电荷累积层上的第二绝缘膜， 形成在第二绝缘膜上的控制栅电极和形成在电荷累积层的底表面和侧表面上的包含Si-N键的第三绝缘膜。

公开(公告)号：US07414285B2

公开(公告)日：2008-08-19

申请号：US11870793

申请日：2007-10-11

申请人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

发明人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

IPC分类号： H01L27/108

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/513

摘要： A nonvolatile semiconductor memory device includes a first insulating film provided on a surface of a semiconductor substrate, a charge accumulation layer provided on the first insulating film, a second insulating film provided above the charge accumulation layer and contains silicon and nitrogen, a third insulating film provided on the second insulating film, and composed of a single-layer insulating film containing oxygen or a plural-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, relative dielectric constant thereof being larger than it of a silicon oxide film, a fourth insulating film provided on the third insulating film and contains silicon and nitrogen, a control gate provided above the fourth insulating film, and a fifth insulating film provided between the charge accumulation layer and the second insulating film or between the fourth insulating film and the control gate, and contains silicon and oxygen.

摘要翻译： 非易失性半导体存储器件包括设置在半导体衬底的表面上的第一绝缘膜，设置在第一绝缘膜上的电荷累积层，设置在电荷累积层上方并含有硅和氮的第二绝缘膜，第三绝缘膜 设置在第二绝缘膜上，并且由包含氧的单层绝缘膜或至少其顶层和底层上的膜含有氧的多层堆叠绝缘膜组成，其相对介电常数大于 氧化硅膜，设置在第三绝缘膜上并含有硅和氮的第四绝缘膜，设置在第四绝缘膜上方的控制栅极和设置在电荷累积层和第二绝缘膜之间的第五绝缘膜， 第四绝缘膜和控制栅，并含有硅和氧。

公开(公告)号：US20080087937A1

公开(公告)日：2008-04-17

申请号：US11870793

申请日：2007-10-11

申请人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

发明人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

IPC分类号： H01L29/788

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/513

摘要： A nonvolatile semiconductor memory device includes a first insulating film provided on a surface of a semiconductor substrate, a charge accumulation layer provided on the first insulating film, a second insulating film provided above the charge accumulation layer and contains silicon and nitrogen, a third insulating film provided on the second insulating film, and composed of a single-layer insulating film containing oxygen or a plural-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, relative dielectric constant thereof being larger than it of a silicon oxide film, a fourth insulating film provided on the third insulating film and contains silicon and nitrogen, a control gate provided above the fourth insulating film, and a fifth insulating film provided between the charge accumulation layer and the second insulating film or between the fourth insulating film and the control gate, and contains silicon and oxygen.

摘要翻译： 非易失性半导体存储器件包括设置在半导体衬底的表面上的第一绝缘膜，设置在第一绝缘膜上的电荷累积层，设置在电荷累积层上方并含有硅和氮的第二绝缘膜，第三绝缘膜 设置在第二绝缘膜上，并且由包含氧的单层绝缘膜或至少其顶层和底层上的膜含有氧的多层堆叠绝缘膜组成，其相对介电常数大于 氧化硅膜，设置在第三绝缘膜上并含有硅和氮的第四绝缘膜，设置在第四绝缘膜上方的控制栅极和设置在电荷累积层和第二绝缘膜之间的第五绝缘膜， 第四绝缘膜和控制栅，并含有硅和氧。

公开(公告)号：US08450787B2

公开(公告)日：2013-05-28

申请号：US13277255

申请日：2011-10-20

申请人： Hiroshi Akahori ,  Wakako Takeuchi

发明人： Hiroshi Akahori ,  Wakako Takeuchi

IPC分类号： H01L29/76 ,  H01L29/792 ,  H01L23/58

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A nonvolatile semiconductor memory has a semiconductor substrate, a first insulating film formed on a channel region on a surface portion of the semiconductor substrate, a charge accumulating layer formed on the first insulating film, a second insulating film formed on the charge accumulating layer, a control gate electrode formed on the second insulating film, and a third insulating film including an Si—N bond that is formed on a bottom surface and side surfaces of the charge accumulating layer.

摘要翻译： 非易失性半导体存储器具有半导体衬底，形成在半导体衬底的表面部分上的沟道区上的第一绝缘膜，形成在第一绝缘膜上的电荷累积层，形成在电荷累积层上的第二绝缘膜， 形成在第二绝缘膜上的控制栅电极和形成在电荷累积层的底表面和侧表面上的包含Si-N键的第三绝缘膜。