METHOD OF ALIGNING A LASER-BASED RADIATION SOURCE
    2.
    发明申请
    METHOD OF ALIGNING A LASER-BASED RADIATION SOURCE 有权
    对准基于激光的辐射源的方法

    公开(公告)号:US20160302295A1

    公开(公告)日:2016-10-13

    申请号:US14212787

    申请日:2014-03-14

    Inventor: Donald Umstadter

    CPC classification number: H05G2/008 H05G2/00 H05G2/001 H05G2/003

    Abstract: A method for temporally and spatially aligning a laser-based x-ray source and maintaining alignment is disclosed. A pump laser beam, which interacts with a plasma source to create an electron beam, is aligned with the electron beam. A scattering laser beam is overlapped with the pump laser beam at an intersection point. The pump laser beam and scattering laser beam alignments are monitored and adjusted to maintain optimal alignment during operation of the laser-based x-ray source.

    Abstract translation: 公开了一种用于时间和空间上对准基于激光的x射线源并保持对准的方法。 与等离子体源相互作用以产生电子束的泵浦激光束与电子束对准。 散射激光束在交点处与泵浦激光束重叠。 监测和调整泵激光束和散射激光束对准以在基于激光的x射线源的操作期间保持最佳对准。

    Method of aligning a laser-based radiation source
    5.
    发明授权
    Method of aligning a laser-based radiation source 有权
    对准基于激光的辐射源的方法

    公开(公告)号:US09485847B1

    公开(公告)日:2016-11-01

    申请号:US14212787

    申请日:2014-03-14

    Inventor: Donald Umstadter

    CPC classification number: H05G2/008 H05G2/00 H05G2/001 H05G2/003

    Abstract: A method for temporally and spatially aligning a laser-based x-ray source and maintaining alignment is disclosed. A pump laser beam, which interacts with a plasma source to create an electron beam, is aligned with the electron beam. A scattering laser beam is overlapped with the pump laser beam at an intersection point. The pump laser beam and scattering laser beam alignments are monitored and adjusted to maintain optimal alignment during operation of the laser-based x-ray source.

    Abstract translation: 公开了一种用于时间和空间上对准基于激光的x射线源并保持对准的方法。 与等离子体源相互作用以产生电子束的泵浦激光束与电子束对准。 散射激光束在交点处与泵浦激光束重叠。 监测和调整泵激光束和散射激光束对准以在基于激光的x射线源的操作期间保持最佳对准。

    Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
    10.
    发明申请
    Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes 失效
    硼碳化物和富含硼的晶体管和隧道二极管

    公开(公告)号:US20020045300A1

    公开(公告)日:2002-04-18

    申请号:US09991768

    申请日:2001-11-16

    Inventor: Peter A. Dowben

    CPC classification number: H01L29/267 H01L29/26 H01L29/802 H01L29/88

    Abstract: The present invention relates to the fabrication of a boron carbide/boron semiconductor devices. The results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron carbide (B5C) acts as a p-type material. Both boron and boron carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement. We have doped boron carbide grown by plasma enhanced chemical vapor deposition. The source gas closo-1,2-dicarbadecaborane (orthocarborane) was used to grow the boron carbide while nickelocene (Ni(C5H5)2) was used to introduce nickel into the growing film. The doping of nickel transformed a B5C material p-type relative to lightly doped n-type silicon to an n-type material. Both p-n heterojunction diodes and n-p heterojunction diodes with n- and p-type Si null1,1,1null respectively. With sufficient partial pressures of nickelocene in the plasma reactor diodes with characteristic tunnel diode behavior can be successfully fabricated.

    Abstract translation: 本发明涉及碳化硼/硼半导体器件的制造。 结果表明,对于大约2eV带隙纯硼材料,0.9eV带隙碳化硼(B5C)用作p型材料。 使用等离子体增强化学气相沉积(PECVD)从单源硼烷笼分子制造硼和碳化硼(B5C)薄膜。 外延增长似乎不是要求。 我们已经掺杂了通过等离子体增强化学气相沉积生长的碳化硼。 使用源气氯-1,2-二十硼烷(原碳硼烷)生长碳化硼,而使用镍(Ni(C 5 H 5)2)将镍引入生长膜。 镍的掺杂将相对于轻掺杂的n型硅的B5C材料p型转变为n型材料。 分别具有n型和p型Si [1,1,1]的p-n异质结二极管和n-p异质结二极管。 在具有特征隧道二极管性能的等离子体电抗器二极管中具有足够的分压,可以成功制造。

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