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    Transparent conductive film, method for production thereof and touch panel therewith
    1.
    发明授权
    Transparent conductive film, method for production thereof and touch panel therewith 有权
    透明导电膜，其制造方法和触摸屏

    公开(公告)号：US09428625B2

    公开(公告)日：2016-08-30

    申请号：US12250645

    申请日：2008-10-14

    申请人： Tomotake Nashiki ,  Hideo Sugawara

    发明人： Tomotake Nashiki ,  Hideo Sugawara

    IPC分类号： B32B7/12 ,  C23C14/34 ,  C08J7/04 ,  G06F3/045 ,  G02F1/1333

    CPC分类号： C08J7/045 ,  G02F1/13338 ,  G02F2001/133331 ,  G02F2202/022 ,  G02F2202/09 ,  G02F2202/16 ,  G06F3/045 ,  Y10T428/265

    摘要： There is provided a transparent conductive film having a transparent conductor layer with a high level of pen input durability and high-temperature, high-humidity reliability. The transparent conductive film of the present invention is a transparent conductive film, comprising: a transparent film substrate; a transparent conductor layer that is provided on one side of the transparent film substrate and has a thickness d of 15 nm to 35 nm and an average surface roughness Ra of 0.37 nm to 1 nm; and at least a single layer of an undercoat layer interposed between the transparent film substrate and the transparent conductor layer.

    摘要翻译： 提供了具有透明导体层的透明导电膜，其具有高水平的笔输入耐久性和高温，高湿度的可靠性。 本发明的透明导电膜是透明导电膜，包括：透明膜基板; 透明导体层，其设置在透明膜基板的一面上，具有15nm至35nm的厚度d和0.37nm至1nm的平均表面粗糙度Ra; 以及插入在透明膜基板和透明导体层之间的至少一层底涂层。

    Transparent crystalline electrically-conductive thin film, method of production thereof, transparent electrically-conductive film, and touch panel
    3.
    发明授权
    Transparent crystalline electrically-conductive thin film, method of production thereof, transparent electrically-conductive film, and touch panel 有权
    透明结晶导电薄膜，其制造方法，透明导电膜和触摸面板

    公开(公告)号：US09260777B2

    公开(公告)日：2016-02-16

    申请号：US11917110

    申请日：2006-12-27

    申请人： Tomotake Nashiki ,  Tomonori Noguchi ,  Hideo Sugawara

    发明人： Tomotake Nashiki ,  Tomonori Noguchi ,  Hideo Sugawara

    IPC分类号： C23C16/00 ,  C23C14/08

    CPC分类号： C23C14/086

    摘要： A transparent crystalline electrically-conductive thin film of the present invention comprises an indium tin oxide as a main component, wherein the indium tin oxide contains 9% by weight or less of tin oxide based on the total amount of indium oxide and tin oxide, wherein the transparent crystalline electrically-conductive thin film contains 0.45 atomic % or less of nitrogen. The transparent crystalline electrically-conductive thin film of the present invention has a high resistance value and good reliability in a high-temperature, high-humidity environment.

    摘要翻译： 本发明的透明结晶性导电性薄膜，以铟锡氧化物为主要成分，其中，所述氧化铟锡含有氧化铟和氧化锡总量的9重量％以下，其中， 透明结晶性导电性薄膜含有0.45原子％以下的氮。 本发明的透明结晶性导电性薄膜在高温高湿环境下具有高电阻值和良好的可靠性。

    TRANSPARENT CONDUCTIVE FILM AND MANUFACTURING METHOD THEREFOR
    6.
    发明申请
    TRANSPARENT CONDUCTIVE FILM AND MANUFACTURING METHOD THEREFOR 审中-公开
    透明导电薄膜及其制造方法

    公开(公告)号：US20130149555A1

    公开(公告)日：2013-06-13

    申请号：US13808487

    申请日：2011-07-06

    申请人： Yuka Yamazaki ,  Tomotake Nashiki ,  Hideo Sugawara ,  Hironobu Machinaga ,  Eri Sasaki

    发明人： Yuka Yamazaki ,  Tomotake Nashiki ,  Hideo Sugawara ,  Hironobu Machinaga ,  Eri Sasaki

    IPC分类号： H01B5/14

    CPC分类号： H01B5/14 ,  C08J7/045 ,  C08J7/08 ,  C08J2323/06 ,  C08J2483/04 ,  C23C14/086 ,  C23C14/562 ,  C23C14/5806

    摘要： An object of the present invention is to manufacture a long transparent conductive film comprising a transparent film substrate and a crystalline indium composite oxide film formed on the transparent film substrate. The manufacturing method of the present invention includes an amorphous laminate formation step of forming an amorphous film of an indium composite oxide containing indium and a tetravalent metal on the long transparent film substrate with a sputtering method, and a crystallization step of continuously feeding the long transparent film substrate on which the amorphous film is formed into a furnace and crystallizing the amorphous film. The temperature inside the furnace in the crystallization step is preferably 170 to 220° C. The change rate of the film length in the crystallization step is preferably +2.5% or less.

    摘要翻译： 本发明的目的在于制造在透明膜基板上形成的透明膜基板和结晶铟复合氧化物膜的长透明导电膜。 本发明的制造方法包括：通过溅射法在长透明膜基板上形成含有铟和四价金属的铟复合氧化物的非晶质膜的无定形层叠体形成工序，以及连续供给长透明性的结晶工序 将其上形成无定形薄膜的薄膜基片放入炉中并使无定形薄膜结晶。 结晶步骤中的炉内的温度优选为170〜220℃。结晶步骤中的膜长度的变化率优选为+ 2.5％以下。

    VACUUM FILM FORMATION METHOD AND LAMINATE OBTAINED BY THE METHOD
    7.
    发明申请
    VACUUM FILM FORMATION METHOD AND LAMINATE OBTAINED BY THE METHOD 有权
    真空膜形成方法和方法获得的层压板

    公开(公告)号：US20120276396A1

    公开(公告)日：2012-11-01

    申请号：US13458640

    申请日：2012-04-27

    申请人： Tomotake NASHIKI ,  Yoshimasa SAKATA ,  Hideo SUGAWARA ,  Kenkichi YAGURA ,  Akira HAMADA ,  Yoshihisa ITO ,  Kuniaki ISHIBASHI

    发明人： Tomotake NASHIKI ,  Yoshimasa SAKATA ,  Hideo SUGAWARA ,  Kenkichi YAGURA ,  Akira HAMADA ,  Yoshihisa ITO ,  Kuniaki ISHIBASHI

    IPC分类号： C23C16/455 ,  C23C14/34 ,  B32B15/00 ,  C23C16/06

    CPC分类号： C23C14/562 ,  C23C14/086 ,  C23C14/14 ,  C23C14/34 ,  C23C14/568 ,  H01L21/67132 ,  H01L21/67173 ,  Y10T428/31678

    摘要： A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.

    摘要翻译： 公开了一种连续使细长衬底经受真空成膜的方法。 该方法包括以下步骤：将来自第一辊室的第一衬底沿第一方向从第一辊室向第二辊室供给; 对第一衬底进行脱气; 在第二成膜室中在第一基板上形成第二材料的膜; 并卷起第二辊室中的第一基板，从而制造第一基板，并且包括类似的步骤以产生第二基板。 在利用第二材料膜制造第一基板之前，第一成膜室的第一阴极电极从第一成膜室除去，并且在用第一材料膜制造第二基板之前，第二阴极 第二成膜室的电极从第二成膜室移除。

    TRANSPARENT CONDUCTIVE LAMINATE AND TOUCH PANEL EQUIPPED WITH IT
    8.
    发明申请
    TRANSPARENT CONDUCTIVE LAMINATE AND TOUCH PANEL EQUIPPED WITH IT 有权
    透明导电层压板和触控面板

    公开(公告)号：US20110217548A1

    公开(公告)日：2011-09-08

    申请号：US13112061

    申请日：2011-05-20

    申请人： Tomotake NASHIKI ,  Hideo SUGAWARA ,  Hidetoshi YOSHITAKE

    发明人： Tomotake NASHIKI ,  Hideo SUGAWARA ,  Hidetoshi YOSHITAKE

    IPC分类号： B32B5/00

    CPC分类号： B32B7/02 ,  B32B5/16 ,  B32B7/12 ,  B32B2264/102 ,  B32B2307/202 ,  B32B2307/412 ,  B32B2307/536 ,  G06F3/0414 ,  Y10T428/24942 ,  Y10T428/256 ,  Y10T428/26 ,  Y10T428/265 ,  Y10T428/269

    摘要： The transparent conductive laminate of the present invention is a transparent conductive laminate, comprising: a transparent film substrate; a transparent conductive thin film provided on one side of the transparent film substrate with a dielectric thin film interposed therebetween; and a transparent substrate bonded to another side of the transparent film substrate with a transparent pressure-sensitive adhesive layer interposed therebetween, wherein the transparent substrate comprises at least two transparent base films laminated with the transparent pressure-sensitive adhesive layer interposed therebetween, and the dielectric thin film comprises a first transparent dielectric thin film consisting of a SiOx (x is from 1.5 to less than 2) film having a relative refractive index of 1.6 to 1.9, and a second transparent dielectric thin film consisting of a SiO2 film. This feature can improve the surface contact pressure durability.

    摘要翻译： 本发明的透明导电性层叠体是透明导电性层叠体，其包含：透明膜基板; 透明导电薄膜，其设置在介于其间的介电薄膜的透明薄膜基片一侧; 以及透明基板，其中透明粘合剂层与透明膜基材的另一侧粘合，其中所述透明基板包括至少两个层压有透明压敏粘合剂层的透明基膜和介电层 薄膜包括由相对折射率为1.6至1.9的SiOx（x为1.5至小于2）的膜构成的第一透明电介质薄膜和由SiO 2膜组成的第二透明电介质薄膜。 此功能可以提高表面接触压力的耐久性。