公开(公告)号：US20230248152A1

公开(公告)日：2023-08-10

申请号：US18134045

申请日：2023-04-13

Applicant: Ting Li

Inventor： Ting Li

IPC: A47C7/68 ,  A47C7/62 ,  G06F3/039

CPC classification number: A47C7/705 ,  A47C7/622 ,  G06F3/0395

Abstract: A laptop computer holder includes a table; a first connector and a second connector arranged at a lower end of the table in which the first connector is sleeved on one armrest of a chair, the second connector is sleeved on the other armrest of the chair, and the first connector is fastened with a bottom end of the table; a bottom of the table provided with a sliding groove extending from one armrest of the chair to the other armrest thereof; and a sliding member arranged in the sliding groove and fastened with the second connector. The first connector and the second connector each include a sleeve hole. The sleeve holes are sleeved on the armrests of the chair respectively.

公开(公告)号：US09362459B2

公开(公告)日：2016-06-07

申请号：US12553025

申请日：2009-09-02

Applicant: Sten Heikman ,  Matthew Jacob-Mitos ,  Ting Li ,  James Ibbetson

Inventor： Sten Heikman ,  Matthew Jacob-Mitos ,  Ting Li ,  James Ibbetson

IPC: H01L33/46 ,  H01L33/00 ,  H01L33/38 ,  H01L33/60 ,  H01L33/40

CPC classification number: H01L33/46 ,  H01L33/00 ,  H01L33/0062 ,  H01L33/387 ,  H01L33/405 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A composite high reflectivity mirror (CHRM) with at least one relatively smooth interior surface interface. The CHRM includes a composite portion, for example dielectric and metal layers, on a base element. At least one of the internal surfaces is polished to achieve a smooth interface. The polish can be performed on the surface of the base element, on various layers of the composite portion, or both. The resulting smooth interface(s) reflect more of the incident light in an intended direction. The CHRMs may be integrated into light emitting diode (LED) devices to increase optical output efficiency.

Abstract translation: 具有至少一个相对平滑的内表面界面的复合高反射镜（CHRM）。 CHRM在基底元件上包括复合部分，例如电介质和金属层。 至少一个内表面被抛光以实现平滑的界面。 抛光剂可以在基体表面，复合部分的各个层上，或两者上进行。 所得到的平滑界面反射更多的入射光在预期的方向。 CHRM可以集成到发光二极管（LED）装置中以增加光输出效率。

公开(公告)号：US08843686B1

公开(公告)日：2014-09-23

申请号：US13598282

申请日：2012-08-29

Applicant: Ting Li Chan ,  Fredarico E. Dutton

Inventor： Ting Li Chan ,  Fredarico E. Dutton

IPC: G06F13/36

CPC classification number: G06F5/12 ,  G06F1/3209 ,  G06F1/3237 ,  G06F1/3287 ,  G06F2205/061 ,  G06F2205/126 ,  Y02D10/128 ,  Y02D10/171 ,  Y02D50/20

Abstract: In an embodiment, an apparatus comprises a buffer, a plurality of processors, and a processor control module. The processor control module is to manage how many of the plurality of processors are used to process data from the buffer based at least in part on an amount of the data stored in the buffer.

Abstract translation: 在一个实施例中，一种装置包括缓冲器，多个处理器和处理器控制模块。 处理器控制模块至少部分地基于存储在缓冲器中的数据的量来管理多个处理器用于处理来自缓冲器的数据。

公开(公告)号：US08759868B2

公开(公告)日：2014-06-24

申请号：US13271865

申请日：2011-10-12

Applicant: Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

Inventor： Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

IPC: H01L29/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/32 ,  H01L33/38

CPC classification number: H01L33/42 ,  H01L24/32 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/3011 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

Abstract translation: 基于倒装芯片半导体的发光器件（LED）可以在衬底上包括n型半导体衬底和n型GaN外延层。 p型GaN外延层可以在n型GaN外延层上，并且金属欧姆接触p电极可以在p型GaN外延层上，其中金属欧姆接触p电极可以具有 平均厚度小于约25埃。 反射器可以在金属欧姆接触p电极上，金属堆叠可以在反射器上。 n电极可以在与n型GaN外延层相对的衬底上，并且焊盘可以在n电极上。

公开(公告)号：US08531323B2

公开(公告)日：2013-09-10

申请号：US13142367

申请日：2010-06-21

Applicant: Ting Li ,  Yuxin Wang ,  Xiaofeng Shen ,  Shutao Zhou ,  Tao Liu ,  Mingyuan Xu ,  Ruzhang Li ,  Kaiquan He

Inventor： Ting Li ,  Yuxin Wang ,  Xiaofeng Shen ,  Shutao Zhou ,  Tao Liu ,  Mingyuan Xu ,  Ruzhang Li ,  Kaiquan He

IPC: H03M1/06

CPC classification number: H03M1/0695 ,  H03M1/168

Abstract: A pipeline A/D converter and its single redundancy bit digital correction are provided. The single redundancy bit digital correction includes the following steps: substages except for the last one quantizes input voltage, calculates the residual voltage, which is amplified and shifted to the middle part of the reference voltage range, and outputs to the following substage until the last one, which only quantizes the input voltage; the code and offset code of each substage corresponding to the quantized thermometer code are calculated; the offset codes of all stages are added by weight to get total offset code; and codes of all substages are added by weight, to which the total offset code is added. The comparator offset error is corrected to obtain an output code which identifies the negative or positive overflow of input signals. The A/D converter adopting the above digital correction is provided.

Abstract translation: 提供流水线A / D转换器及其单个冗余位数字校正。 单个冗余位数字校正包括以下步骤：除最后一个以外的子步长量化输入电压，计算被放大并转移到参考电压范围中间部分的剩余电压，并输出到下一个子站直到最后一个 一个，仅量化输入电压; 计算与量化温度计代码相对应的每个子级的代码和偏移代码; 所有阶段的偏移代码通过权重相加得到总偏移代码; 并且通过加权添加所有子级的代码，添加总偏移代码。 校正比较器偏移误差以获得识别输入信号的负或正溢出的输出代码。 提供采用上述数字校正的A / D转换器。

公开(公告)号：US08507924B2

公开(公告)日：2013-08-13

申请号：US13045246

申请日：2011-03-10

Applicant: Ting Li

Inventor： Ting Li

IPC: H01L27/15

CPC classification number: H01L33/22 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2224/0401

Abstract: The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

Abstract translation: 通过对发光表面施加反应离子蚀刻（RIE）工艺来改变LED发光表面的表面形态。 在施加反应离子蚀刻工艺之前，通过将具有亚微米图案的薄膜金属硬掩模转移到表面，在发光表面上形成高纵横比，亚微米粗糙度。 金属硬掩模中的亚微米图案可以使用低成本的市售纳米图案模板来形成，其通过掩模转印到表面。 在将掩模结合到表面之后，去除模板，并且施加RIE过程足以改变表面形态的持续时间。 改性表面含有具有高纵横比的非对称亚微米结构，这提高了器件的效率。

公开(公告)号：US20130105912A1

公开(公告)日：2013-05-02

申请号：US13283603

申请日：2011-10-28

Applicant: Chun-Wei Hsu ,  Po-Cheng Huang ,  Ren-Peng Huang ,  Jie-Ning Yang ,  Chia-Lin Hsu ,  Teng-Chun Tsai ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Yen-Ming Chen ,  Yu-Ting Li

Inventor： Chun-Wei Hsu ,  Po-Cheng Huang ,  Ren-Peng Huang ,  Jie-Ning Yang ,  Chia-Lin Hsu ,  Teng-Chun Tsai ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Yen-Ming Chen ,  Yu-Ting Li

IPC: H01L27/06 ,  H01L21/8234

CPC classification number: H01L27/0629

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the substrate of the resistor region; forming a tank in the STI of the resistor region; and forming a resistor in the tank and on the surface of the STI adjacent to two sides of the tank.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供具有晶体管区域和电阻器区域的衬底; 在电阻器区域的衬底上形成浅沟槽隔离（STI）; 在电阻区域的STI中形成槽; 并且在罐中形成电阻器，并且在与槽的两侧相邻的STI的表面上形成电阻器。

公开(公告)号：US20120295094A1

公开(公告)日：2012-11-22

申请号：US13293531

申请日：2011-11-10

Applicant: HUANN-WU CHIANG ,  CHENG-SHI CHEN ,  DUN MAO ,  KONG-TING LI

Inventor： HUANN-WU CHIANG ,  CHENG-SHI CHEN ,  DUN MAO ,  KONG-TING LI

IPC: B32B3/26 ,  B29C45/14

CPC classification number: C03C15/00 ,  B32B17/064 ,  B32B27/286 ,  B32B2262/101 ,  B32B2262/106 ,  C03C2204/08 ,  Y10T428/249956

Abstract: A composite article includes a glass part and a plastic part. The glass part includes a porous surface defining a plurality of nano-pores. Each nano-pore has a pore opening size between about 50 nm and about 200 nm. The plastic part is molded on the porous surface.

Abstract translation: 复合制品包括玻璃部件和塑料部件。 玻璃部分包括限定多个纳米孔的多孔表面。 每个纳米孔具有在约50nm和约200nm之间的孔开口尺寸。 塑料部分模制在多孔表面上。

公开(公告)号：US08281686B2

公开(公告)日：2012-10-09

申请号：US12885691

申请日：2010-09-20

Applicant: Jeng-Shyong Chen ,  Po-Ting Li ,  Yong-Chang Zeng

Inventor： Jeng-Shyong Chen ,  Po-Ting Li ,  Yong-Chang Zeng

IPC: F16F15/14 ,  F16F15/30 ,  F16C15/00 ,  G01M1/16

CPC classification number: G01M1/36 ,  Y10T74/2109 ,  Y10T74/2121 ,  Y10T74/2127 ,  Y10T74/2128

Abstract: An eddy-current actuated balancer includes a barrel having a locating wall at one end thereof; two balancing wheels mounted around the barrel and carrying a respective counterweight at the border, a washer set between the balancing wheels, an elastic ring and a lock ring and a pulsed magnetic field generator mounted on each balancing wheel. The balancing wheels, the washer and the elastic ring are clamped between the locating wall of the barrel and the lock ring. Each pulsed magnetic field generator is controlled to generate a pulsed magnetic field acting upon the associating balancing wheel during its rotation for inducing an eddy current that causes the associating balancing wheel to make an angular displacement relative to the barrel for balance adjustment.

Abstract translation: 涡流驱动平衡器包括在其一端具有定位壁的筒体; 两个平衡轮安装在机筒周围并在边界处携带相应的配重，设置在平衡轮之间的垫圈，弹性环和锁定环以及安装在每个平衡轮上的脉冲磁场发生器。 平衡轮，垫圈和弹性环被夹在筒的定位壁和锁环之间。 每个脉冲磁场发生器被控制以在其旋转期间产生作用在关联平衡轮上的脉冲磁场，用于引起涡流，其使相关平衡轮相对于所述筒进行角位移以进行平衡调节。

公开(公告)号：US20120080688A1

公开(公告)日：2012-04-05

申请号：US13271865

申请日：2011-10-12

Applicant: Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

Inventor： Mark Raffetto ,  Jayesh Bharathan ,  Kevin Haberern ,  Michael Bergmann ,  David Emerson ,  James Ibbetson ,  Ting Li

IPC: H01L33/02 ,  H01L33/60

CPC classification number: H01L33/42 ,  H01L24/32 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/3011 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

Abstract translation: 基于倒装芯片半导体的发光器件（LED）可以在衬底上包括n型半导体衬底和n型GaN外延层。 p型GaN外延层可以在n型GaN外延层上，并且金属欧姆接触p电极可以在p型GaN外延层上，其中金属欧姆接触p电极可以具有 平均厚度小于约25埃。 反射器可以在金属欧姆接触p电极上，金属堆叠可以在反射器上。 n电极可以在与n型GaN外延层相对的衬底上，并且焊盘可以在n电极上。