公开(公告)号：US20120133381A1

公开(公告)日：2012-05-31

申请号：US12956030

申请日：2010-11-30

Applicant: Kelly BRULAND ,  Timothy R. WEBB ,  Andy E. HOOPER ,  John R. CARRUTHERS

Inventor： Kelly BRULAND ,  Timothy R. WEBB ,  Andy E. HOOPER ,  John R. CARRUTHERS

IPC: H01L21/66 ,  H01L23/48 ,  G01R1/06

CPC classification number: H01L22/32 ,  G01R31/2884 ,  H01L25/0652 ,  H01L25/0657 ,  H01L2224/48091 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06534 ,  H01L2225/06551 ,  H01L2225/06596 ,  H01L2924/1461 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method of performing a function on a three-dimensional semiconductor chip package as well as on individual chips in the package is disclosed. That method involves the creation of an operative relationship between a function performer and an edge feature on the chip or chips wherein the edge feature consists of one or more of an electrically conductive pad, thermally conductive pad, a probe pad, a fuse, a resistor, a capacitor, an inductor, an optical emitter, an optical receiver, a test pad, a bond pad, a contact pin, a heat dissipator, an alignment marker, a metrology feature and a function performer may be any one or more of a test probe, the laser, a programming device, an interrogation device, a loading device or a tuning device. In addition, a chip per se with edge features is disclosed along with a three-dimensional stack of such chips in either of several different configurations. The disclosure provides information regarding the formation of edge feature, the singulation of dice having incipient edge features, the stacking of dice and the handling or dice with edge features.

Abstract translation: 公开了一种在三维半导体芯片封装以及封装中的各个芯片上执行功能的方法。 该方法涉及在功能执行器和芯片上的边缘特征之间创建操作关系，其中边缘特征由导电焊盘，导热焊盘，探针焊盘，熔丝，电阻器中的一个或多个组成 ，电容器，电感器，光发射器，光接收器，测试焊盘，接合焊盘，接触针，散热器，对准标记，计量特征和功能执行器可以是以下中的任何一个或多个： 测试探头，激光器，编程设备，询问设备，加载设备或调谐设备。 此外，具有边缘特征的芯片本身以及几种不同配置中的任何一种的这种芯片的三维堆叠被公开。 本公开提供了关于边缘特征的形成，具有初始边缘特征的骰子的分割，骰子的堆叠以及具有边缘特征的处理或骰子的信息。

公开(公告)号：US06770565B2

公开(公告)日：2004-08-03

申请号：US10043561

申请日：2002-01-08

Applicant: Donald J. K. Olgado ,  Avi Tepman ,  Dmitry Lubomirsky ,  Timothy R. Webb

Inventor： Donald J. K. Olgado ,  Avi Tepman ,  Dmitry Lubomirsky ,  Timothy R. Webb

IPC: H01L2302

CPC classification number: H01L21/6708 ,  C23F1/18 ,  H01L21/32115 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/7684

Abstract: A method of planarizing a metal conductive layer on a substrate is provided. In one embodiment, a substrate having a metal conductive layer disposed on a top surface of the substrate is provided on a substrate support. The substrate support is rotated and the top surface of the substrate is contacted with a liquid etching composition. The metal conductive layer is then exposed to an etchant gas in order to planarize the top surface of the metal conductive layer. Also provided is an apparatus for etching a metal conductive layer on a substrate. The apparatus comprises a container, a substrate support disposed in the container, a rotation actuator attached to the substrate support, and a fluid delivery assembly disposed in the container.

Abstract translation: 提供了在基板上平面化金属导电层的方法。 在一个实施例中，在衬底支架上设置具有设置在衬底顶表面上的金属导电层的衬底。 衬底支撑件旋转并且衬底的顶表面与液体蚀刻组合物接触。 然后将金属导电层暴露于蚀刻剂气体，以平坦化金属导电层的顶表面。 还提供了一种用于在基板上蚀刻金属导电层的装置。 该装置包括容器，设置在容器中的基板支撑件，附接到基板支撑件的旋转致动器以及设置在容器中的流体输送组件。

公开(公告)号：US5779926A

公开(公告)日：1998-07-14

申请号：US596960

申请日：1996-02-05

Applicant: Diana Xiaobing Ma ,  Daisuke Tajima ,  Allen Zhao ,  Peter K. Loewenhardt ,  Timothy R. Webb

Inventor： Diana Xiaobing Ma ,  Daisuke Tajima ,  Allen Zhao ,  Peter K. Loewenhardt ,  Timothy R. Webb

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  B44C1/22 ,  C23F1/00 ,  H01L21/00

CPC classification number: H01J37/321 ,  C23F4/00 ,  H01L21/32136

Abstract: A method of etching a multicomponent alloy on a substrate, without forming etchant residue on the substrate, is described. In the method, the substrate is placed in a process chamber comprising a plasma generator and plasma electrodes. A process gas comprising a volumetric flow ratio V.sub.r of (i) a chlorine-containing gas capable of ionizing to form dissociated Cl.sup.+ plasma ions and non-dissociated Cl.sub.2.sup.+ plasma ions, and (ii) an inert gas capable of enhancing dissociation of the chlorine-containing gas, in introduced into the process chamber. The process gas is ionized to form plasma ions that energetically impinge on the substrate by (i) applying RF current at a first power level to the plasma generator, and (ii) applying RF current at a second power level to the plasma electrodes. The combination of (i) the volumetric flow ratio V.sub.r of the process gas and (ii) the power ratio P.sub.r of the first power level to the second power level, is selected so that the chlorine-containing etchant gas ionizes to form dissociated Cl.sup.+ plasma ions and non-dissociated Cl.sub.2.sup.+ plasma ions in a number ratio of at least about 0.6:1. The increased amount of dissociated Cl.sup.+ ions relative to non-dissociated Cl.sub.2.sup.+ ions etches the multicomponent alloy on the substrate at an etch rate of at least about 500 nm/min, without forming etchant residue on the substrate.

Abstract translation: 描述了在衬底上蚀刻多组分合金而不在衬底上形成蚀刻剂残留物的方法。 在该方法中，将基板放置在包括等离子体发生器和等离子体电极的处理室中。 一种工艺气体，其包括（i）能够电离以形成离解的Cl +等离子体离子和非离解的Cl 2 +等离子体离子的含氯气体的体积流量比Vr，和（ii）能够增强氯 - 含有气体，被引入处理室。 通过（i）以等离子体发生器施加第一功率电平的RF电流，并且（ii）将第二功率电平的RF电流施加到等离子体电极，将工艺气体电离以形成能量地撞击衬底的等离子体离子。 选择（i）处理气体的体积流量比Vr和（ii）第一功率水平与第二功率水平的功率比Pr的组合，使得含氯蚀刻剂气体电离以形成离解的Cl +等离子体 离子和非离解的Cl2 +等离子体离子的数量比至少为约0.6:1。 解离的Cl +离子相对于未离解的Cl 2 +离子的量的增加量以至少约500nm / min的蚀刻速率蚀刻衬底上的多组分合金，而不在衬底上形成蚀刻剂残留物。

公开(公告)号：US07025862B2

公开(公告)日：2006-04-11

申请号：US10278527

申请日：2002-10-22

Applicant: Harald Herchen ,  Henan Hao ,  Celina M. Esteban ,  Timothy R. Webb ,  Son N. Trinh

Inventor： Harald Herchen ,  Henan Hao ,  Celina M. Esteban ,  Timothy R. Webb ,  Son N. Trinh

IPC: C25B9/00

CPC classification number: C25D17/06 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  Y10T29/49117 ,  Y10T29/49204 ,  Y10T29/5313 ,  Y10T29/532

Abstract: An apparatus for providing an electrical bias to a substrate in a processing system is described. The apparatus generally includes a conductive annular body defining a central opening. The conductive annular body may have a substrate seating surface adapted to receive the substrate and a plurality of scallops formed on a surface opposing the substrate seating surface. A plurality of electrical contacts may be formed on the substrate seating surface opposite the plurality of scallops. The electrical contacts may be adapted to engage a plating surface of the substrate.

Abstract translation: 描述了一种用于在处理系统中向基板提供电偏压的装置。 该装置通常包括限定中心开口的导电环形体。 导电环形体可以具有适于容纳衬底的衬底安置表面和形成在与衬底安置表面相对的表面上的多个扇贝。 多个电触头可以形成在与多个扇贝相对的基板支座表面上。 电触点可以适于接合基板的电镀表面。

公开(公告)号：US6090717A

公开(公告)日：2000-07-18

申请号：US622657

申请日：1996-03-26

Applicant: Stephen F. Powell ,  Jeffrey V. Musser ,  Robert Guerra ,  Timothy R. Webb

Inventor： Stephen F. Powell ,  Jeffrey V. Musser ,  Robert Guerra ,  Timothy R. Webb

IPC: H01L21/3213 ,  H01L21/302

CPC classification number: H01L21/32136

Abstract: A method in a plasma processing chamber for etching through a selected portion of a metallization layer of a wafer's layer stack. The method includes the step of etching at least partially through the metallization layer of the layer stack with an etchant source gas that consists essentially of chlorine and nitrogen. In another embodiment, the metallization layer comprises aluminum, and the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 10:1. More preferably, the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 4:1 and preferably ranges from about 1:1 to about 2:1.

Abstract translation: 一种等离子体处理室中用于蚀刻通过晶片层叠层的金属化层的选定部分的方法。 该方法包括至少部分地通过层叠体的金属化层蚀刻的步骤，该蚀刻剂源气体基本上由氯和氮组成。 在另一个实施方案中，金属化层包含铝，并且氯与氮的流动比范围为约1:1至约10:1。 更优选地，氯与氮的流动比范围为约1:1至约4:1，优选为约1:1至约2:1。