公开(公告)号：US20130061556A1

公开(公告)日：2013-03-14

申请号：US13605856

申请日：2012-09-06

Applicant: Akinori HATSUNO ,  Tetsuo SAKURAI

Inventor： Akinori HATSUNO ,  Tetsuo SAKURAI

IPC: B65B57/00

CPC classification number: B65B61/26 ,  B65B9/093 ,  G07F17/0092

Abstract: A solid preparation packaging apparatus includes a solid preparation accommodating unit, a transfer mechanism unit and a solid preparation packaging mechanism unit each individually accommodated in a main body so as to be capable of being pulled out or pushed back in the back-and-forth direction; an electrical component chamber containing a CPU circuit board and a power supply at the lowest portion of the solid preparation packaging apparatus, and a flexible wiring cover mounted across the electrical component chamber and the solid preparation packaging mechanism unit in order to pass, through the flexible wiring cover, a wiring of the solid preparation accommodating unit, the transfer mechanism unit and the solid preparation packaging mechanism unit to the CPU circuit board and the power supply.

Abstract translation: 固体制剂包装装置包括固体制剂容纳单元，转移机构单元和固体制剂包装机构单元，每个单独容纳在主体中，以便能够沿前后方向被拉出或推回 ; 包含CPU电路板的电气部件室和固体制剂包装装置的最下部的电源，以及安装在电气部件室和固体准备包装机构部的两侧的柔性配线罩，以便通过柔性 接线罩，固体准备容纳单元的布线，传送机构单元和固体制备包装机构单元连接到CPU电路板和电源。

公开(公告)号：US08216830B2

公开(公告)日：2012-07-10

申请号：US12707122

申请日：2010-02-17

Applicant: Kuniyoshi Kobayashi ,  Hiroki Busujima ,  Yasuhiro Kikuchi ,  Yuichi Tamaoki ,  Shinji Sugimoto ,  Tetsuo Sakurai

Inventor： Kuniyoshi Kobayashi ,  Hiroki Busujima ,  Yasuhiro Kikuchi ,  Yuichi Tamaoki ,  Shinji Sugimoto ,  Tetsuo Sakurai

IPC: C12M1/38

CPC classification number: C12M41/14 ,  C12M23/48 ,  C12M37/00 ,  Y10S435/809

Abstract: A culture apparatus includes a culture chamber in which culture is cultured, a shelf plate included in the culture chamber, on which the culture is placed, and shelf rests in a left-and-right pair configured to support the shelf plate and a plurality of shelf supports configured to support the shelf rests. The shelf rests each include one piece supporting the shelf plate and the other piece supported by the shelf supports. The shelf rests are in an L-shape in a cross-sectional manner whose angle between the one piece and the other piece is an acute angle. The one piece is in line contact with a lower face of the shelf plate at an end of the one piece extending obliquely upward from a side face of the culture chamber toward the inside of the culture chamber. The culture chamber is supplied with sterilizing gas to be sterilized.

Abstract translation: 培养装置包括培养培养的培养室，培养室中包含培养物的搁板，并且搁置在构成为支撑搁板的左右对中的多个 支架配置为支撑货架。 搁板每个都包括支撑搁板的一个部件和由搁板支撑件支撑的另一个部件。 搁板搁板是横截面的L形，其中一件与另一件之间的角度是锐角。 该单件在从培养室的侧面向培养室的内侧向斜上方延伸的单件的端部与搁板的下表面线接触。 向培养室供给灭菌气体。

公开(公告)号：US20100267221A1

公开(公告)日：2010-10-21

申请号：US12827890

申请日：2010-06-30

Applicant: Tetsuo SAKURAI

Inventor： Tetsuo SAKURAI

IPC: H01L21/20

CPC classification number: H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02614 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L33/325

Abstract: A Group III nitride semiconductor device and method for producing the same. The device includes a substrate, and a plurality of Group III nitride semiconductor layers provided on the substrate. A first layer which is in contact with the substrate is composed of AlxGa1-x N (0≦x≦1), and the difference in height between a protrusion and a depression which are present at the interface between the first layer and a second layer provided thereon is 10 nm or more and is equal to, or less than, 99% the thickness of the first layer. The method includes a first step of depositing on a substrate, a layer containing fine Group III metal particles containing silicon; a second step of nitridizing the fine particles in an atmosphere containing a nitrogen source; and a third step of growing a Group III nitride semiconductor single crystal on the thus-nitridized fine particles.

Abstract translation: 一种III族氮化物半导体器件及其制造方法。 该器件包括衬底和设置在衬底上的多个III族氮化物半导体层。 与基板接触的第一层由Al x Ga 1-x N（0＆lt; n 1; x＆n 1; 1）构成，并且存在于第一层与第二层之间的界面处的突起与凹陷之间的高度差 其上设置有10nm以上且等于或小于第一层的厚度的99％。 该方法包括沉积在基底上的第一步骤，包含含有硅的细小的III族金属颗粒; 在含氮源的气氛中氮化微粒子的第二步骤; 以及在这样的氮化微粒上生长III族氮化物半导体单晶的第三步骤。

公开(公告)号：US07601979B2

公开(公告)日：2009-10-13

申请号：US10586849

申请日：2005-01-28

Applicant: Hisayuki Miki ,  Tetsuo Sakurai ,  Hitoshi Takeda

Inventor： Hisayuki Miki ,  Tetsuo Sakurai ,  Hitoshi Takeda

IPC: H01L29/06

CPC classification number: H01L33/24 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining a satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, an active layer, and a p-type layer formed on the substrate, the active layer being sandwiched by the n-type layer and the p-type layer, and the active layer comprising a thick portion and a thin portion, wherein the active layer has a flat lower surface (on the substrate side) and an uneven upper surface so as to form the thick portion and the thin portion.

Abstract translation: 本发明的目的是提供一种氮化镓化合物半导体多层结构，其用于制造在低电压下工作并保持令人满意的发光输出的氮化镓系化合物半导体发光元件。 本发明的氮化镓化合物半导体多层结构包括基板，形成在基板上的n型层，有源层和p型层，活性层夹在n型层和p型 层，有源层包括厚部分和薄部分，其中有源层具有平坦的下表面（在基板侧）和不平坦的上表面，以便形成厚部分和薄部分。

公开(公告)号：US20090104728A1

公开(公告)日：2009-04-23

申请号：US12338882

申请日：2008-12-18

Applicant: Masato KOBAYAKAWA ,  Hitoshi TAKEDA ,  Hisayuki MIKI ,  Tetsuo SAKURAI

Inventor： Masato KOBAYAKAWA ,  Hitoshi TAKEDA ,  Hisayuki MIKI ,  Tetsuo SAKURAI

IPC: H01L31/18 ,  H01L21/18

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/24

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

Abstract translation: 本发明的目的是提供一种氮化镓化合物半导体多层结构，其可用于制造在低电压下工作并保持良好的发光输出的氮化镓化合物半导体发光器件。 本发明的氮化镓化合物半导体多层结构包括基板，形成在基板上的n型层，发光层和p型层，所述发光层具有多量子阱结构，其中， 阱层和阻挡层重复交替层叠，所述发光层被n型层和p型层夹持，其中阱层包括厚部和薄部，阻挡层含有 掺杂剂。

公开(公告)号：US20070170457A1

公开(公告)日：2007-07-26

申请号：US10589610

申请日：2005-02-23

Applicant: Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

Inventor： Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

IPC: H01L33/00

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/24

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

Abstract translation: 本发明的目的是提供一种氮化镓化合物半导体多层结构，其可用于制造在低电压下工作并保持良好的发光输出的氮化镓化合物半导体发光器件。 本发明的氮化镓化合物半导体多层结构包括基板，形成在基板上的n型层，发光层和p型层，所述发光层具有多量子阱结构，其中， 阱层和阻挡层重复交替层叠，所述发光层被n型层和p型层夹持，其中阱层包括厚部和薄部，阻挡层含有 掺杂剂。

公开(公告)号：USD475794S1

公开(公告)日：2003-06-10

申请号：US29157056

申请日：2002-03-12

Applicant: Hiroya Ishigaki ,  Masatoshi Okuda ,  Norioki Fujimoto ,  Tetsuo Sakurai ,  Koji Ono ,  Motohiko Kosano

Designer： Hiroya Ishigaki ,  Masatoshi Okuda ,  Norioki Fujimoto ,  Tetsuo Sakurai ,  Koji Ono ,  Motohiko Kosano

公开(公告)号：US06515767B1

公开(公告)日：2003-02-04

申请号：US10173876

申请日：2002-06-19

Applicant: Tetsuo Sakurai

Inventor： Tetsuo Sakurai

IPC: G06K1500

CPC classification number: H04N1/393

Abstract: The digital synthesizer comprises a system control unit, a read control unit, and a write drive control unit, and based on a magnification fine adjustment value set using a magnification fine adjustment panel, in the copy mode, a magnification of an image in the main scanning direction is finely adjusted by controlling a write reference clock frequency for modulating a laser beam for image formation so that a desired pixel density is obtained and also a magnification of the image in the auxiliary scanning direction is finely adjusted by controlling a scan speed when reading an image from a document, while in the printer mode, a magnification of an image in the main scanning direction is finely adjusted by controlling a write reference clock frequency and also a magnification of the image in the auxiliary scanning direction is finely adjusted by controlling a rotational speed of a polygon mirror for scanning a photosensitive mirror with a write beam.

Abstract translation: 数字合成器包括系统控制单元，读取控制单元和写入驱动控制单元，并且基于在复制模式下使用倍率微调面板设置的倍率微调值，主要是图像的放大倍率 通过控制用于调制用于图像形成的激光束的写参考时钟频率来精细地调整扫描方向，从而获得期望的像素密度，并且通过在读取时控制扫描速度来微调辅助扫描方向上的图像的倍率 来自文档的图像在打印机模式下，通过控制写入基准时钟频率来精细地调整图像在主扫描方向上的放大倍率，并且还可以通过控制辅助扫描方向来精细地调整图像的辅助扫描方向的倍率 用于用写入光束扫描光敏反射镜的多面镜的旋转速度。

公开(公告)号：US6147776A

公开(公告)日：2000-11-14

申请号：US106906

申请日：1998-06-30

Applicant: Tetsuo Sakurai ,  Yoshiharu Niito ,  Syuuichi Yamazaki

Inventor： Tetsuo Sakurai ,  Yoshiharu Niito ,  Syuuichi Yamazaki

IPC: G02B26/12 ,  H04N1/393 ,  H04N1/04

CPC classification number: G02B26/127 ,  H04N1/393

Abstract: An image scanner, including an optical image reading unit which reads an image from a document and a carriage which carries the optical image reading unit. Also included is a motor which drives the carriage, and a driver which outputs a sequence of drive signals to drive the motor. Further, a timing of each drive signal of the sequence of drive signals output by the driver is selected in accordance with a desired incremental magnification of the document. In addition, the incremental magnification of the document may be selected in steps of 0.1%.

Abstract translation: 一种图像扫描仪，包括从文件读取图像的光学图像读取单元和携带光学图像读取单元的滑架。 还包括驱动滑架的马达和输出一系列驱动信号以驱动马达的驱动器。 此外，根据文档的期望的增量放大率来选择由驾驶员输出的驱动信号序列的每个驱动信号的定时。 此外，可以以0.1％的步长选择文档的增量放大率。

公开(公告)号：US08913115B2

公开(公告)日：2014-12-16

申请号：US13407391

申请日：2012-02-28

Applicant: Tetsuo Sakurai ,  Bin Qi

Inventor： Tetsuo Sakurai ,  Bin Qi

IPC: H04N7/18 ,  H04N5/235 ,  H04N5/232 ,  H04N5/353 ,  H04N5/225

CPC classification number: H04N5/2354 ,  H04N5/23254 ,  H04N5/353 ,  H04N7/18 ,  H04N2005/2255

Abstract: An imaging device includes: an imaging module configured to have a plurality of photoelectric conversion elements corresponding to a frame composed of a plurality of lines, with start of an accumulation period of electric charge by the plural photoelectric conversion elements being different depending on each of the lines, and reading the accumulated electric charge to repeatedly output the read electric charge as an image signal; a light source configured to irradiate an imaging range of the imaging module; and a controller configured to control an irradiation time of the light source according to a motion of an image captured by the imaging module.

Abstract translation: 一种成像装置，包括：成像模块，其被配置为具有与由多条线构成的帧对应的多个光电转换元件，所述多个光电转换元件的电荷累积期间的开始根据 并读取累积的电荷以重复地输出读取的电荷作为图像信号; 被配置为照射所述成像模块的成像范围的光源; 以及控制器，被配置为根据由所述成像模块捕获的图像的运动来控制所述光源的照射时间。