公开(公告)号：US4419685A

公开(公告)日：1983-12-06

申请号：US245510

申请日：1981-03-19

申请人： Yoshitaka Sugawara ,  Tatsuya Kamei ,  Tetsuma Sakurai

发明人： Yoshitaka Sugawara ,  Tatsuya Kamei ,  Tetsuma Sakurai

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/735

CPC分类号： H01L29/402 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/735

摘要： A lateral transistor having a high breakdown voltage and operable with an improved current amplification factor and an improved cut-off frequency comprises in a semiconductor substrate of one conductivity type, a base layer of the one conductivity type and an emitter layer of the other conductivity type formed in the base layer. A first collector layer of the other conductivity type is formed in the one principal surface of the substrate apart from the base layer and a second collector layer of the same conductivity type having an impurity concentration lower than that of the first collector layer is formed between the first collector layer and the base layer in contact with the latter layers. Emitter, base and collector electrodes make ohmic contact with the emitter, base and first collector layers respectively. The emitter electrode extends on a passivation film covering the one principal surface of the substrate to terminate at a point on the second collector layer.

摘要翻译： 具有高击穿电压并且具有改善的电流放大因子和改进的截止频率的横向晶体管包括在一种导电类型的半导体衬底中，一种导电类型的基极层和另一种导电类型的发射极层 形成在基层。 另外导电型的第一集电体层形成在与基底层相隔的基板的一个主表面上，并且在第二集电极层之间形成具有比第一集电体层低的杂质浓度的相同导电类型的第二集电极层 第一集电体层和与后一层接触的基层。 发射极，基极和集电极电极分别与发射极，基极和第一集电极层欧姆接触。 发射电极在覆盖衬底的一个主表面的钝化膜上延伸以终止于第二集电极层上的一点。

公开(公告)号：US4408386A

公开(公告)日：1983-10-11

申请号：US326751

申请日：1981-12-02

申请人： Tetsuya Takayashiki ,  Taiji Usui ,  Tetsuma Sakurai

发明人： Tetsuya Takayashiki ,  Taiji Usui ,  Tetsuma Sakurai

IPC分类号： H01L21/762 ,  H01L21/76 ,  H01L21/20

CPC分类号： H01L21/76297

摘要： Spaced recesses are formed in a surface of a low impurity concentration P type single-crystal substrate by using a mask. A P type impurity is diffused at a high concentration into an entire surface of the substrate including the recesses to form a P type diffused layer, and an N type layer is epitaxially grown on the P type diffused layer. Then, mask layers are formed on bottom surfaces of the recesses in the epitaxially grown N type layer and this N type layer is anisotropically etched by using the mask layers to form island regions in the recesses. After removing the mask layers, N type diffused layers are formed to cover the island regions. An insulating film (SiO.sub.2) acting to isolate completed transistor elements is formed on the P and N type diffused layers, and a polycrystalline silicon layer acting as a support of a dielectrically isolated integrated circuit device is formed on the insulating film. Then, the rear surface of the single-crystal silicon substrate is ground off to expose the insulating film. MOS or bipolar type transistor elements are formed in the island regions to obtain a dielectrically isolated semiconductor integrated device.

摘要翻译： 通过使用掩模，在低杂质浓度P型单晶衬底的表面上形成间隔开的凹部。 P型杂质以高浓度扩散到包括凹部的基板的整个表面，形成P型扩散层，在P型扩散层上外延生长N型层。 然后，在外延生长的N型层中的凹部的底面上形成掩模层，并且通过使用掩模层对该N型层进行各向异性蚀刻，以在凹部中形成岛状区域。 在去除掩模层之后，形成N型扩散层以覆盖岛状区域。 在P和N型扩散层上形成用于隔离完成的晶体管元件的绝缘膜（SiO 2），并且在绝缘膜上形成用作介电隔离集成电路器件的支撑体的多晶硅层。 然后，将单晶硅衬底的后表面研磨以露出绝缘膜。 在岛区域中形成MOS或双极型晶体管元件，以获得介电隔离的半导体集成器件。

公开(公告)号：US5732394A

公开(公告)日：1998-03-24

申请号：US630668

申请日：1996-04-10

申请人： Yoshio Nakadai ,  Tetsuma Sakurai ,  Yutaka Nishino

发明人： Yoshio Nakadai ,  Tetsuma Sakurai ,  Yutaka Nishino

IPC分类号： G10L15/04 ,  G10L15/10 ,  G10L15/20 ,  G10L5/06 ,  G10L9/00

CPC分类号： G10L15/10 ,  G10L15/04

摘要： In a word speech recognition method which performs pattern matching between unknown speech pattern and multiple reference templates and detects that one of the reference templates which provides the smallest one of distance measures detected between the unknown speech pattern and the reference templates, when the difference d between the speech period length of the unknown speech pattern and the speech period length of a selected reference template exceeds a fixed threshold value .epsilon..sub.1, partial patterns are extracted from the unknown speech pattern, each starting at a different position, and the minimum one of the distances obtained by pattern matching between these extracted partial patterns and the selected reference template is determined to be the distance between the selected reference template and the unknown speech pattern. When the difference d is in the range of -.epsilon..sub.2 .ltoreq.d.ltoreq..epsilon..sub.1, pattern matching is performed between speech periods of the unknown speech pattern and the reference templates with their variation periods eliminated therefrom at their both ends.

摘要翻译： 在一种语音识别方法中，其执行未知语音模式与多个参考模板之间的模式匹配，并且检测在未知语音模式与参考模板之间检测到距离度量中最小的一个参考模板中的一个参考模板，当 未知语音模式的语音周期长度和所选择的参考模板的语音周期长度超过固定阈值ε1，从未知语音模式中提取部分模式，每个从不同的位置开始，最小的一个 将这些提取的部分图案与所选参考模板之间的模式匹配获得的距离确定为所选参考模板与未知语音模式之间的距离。 当差分d在-ε2范围内时，在未知语音模式的语音周期与参考模板之间进行模式匹配，并在其两端消除其变化周期。

公开(公告)号：US4393573A

公开(公告)日：1983-07-19

申请号：US181357

申请日：1980-08-26

申请人： Kotaro Kato ,  Tetsuma Sakurai

发明人： Kotaro Kato ,  Tetsuma Sakurai

IPC分类号： H01L21/762 ,  H01L21/8228 ,  H01L27/08 ,  H01L27/082 ,  H01L27/092 ,  H01L21/223

CPC分类号： H01L27/0928 ,  H01L21/76297 ,  H01L21/82285 ,  H01L27/0817 ,  H01L27/0826

摘要： The semiconductor device is provided with semiconductor elements having the complementary characteristics and high breakdown strength. These semiconductor elements are formed in N and P islands respectively each having an inverted frustum shape.Surfaces of the frustum are inclined by an angle determined by semiconductor crystal structure. Side and bottom surfaces of the islands are formed adjacent to an insulating layer and both islands are supported part from the polycrystalline semiconductor layer. All side and bottom surfaces of the islands adjacent the insulating layer are made of high impurity substance of the same type as respective islands.

摘要翻译： 半导体器件设置有具有互补特性和高击穿强度的半导体元件。 这些半导体元件分别形成在具有倒立的截头锥形状的N和P岛中。 平截头体的表面倾斜由半导体晶体结构确定的角度。 岛的侧表面和底表面邻近绝缘层形成，并且两个岛都是来自多晶半导体层的支撑部分。 与绝缘层相邻的岛的所有侧表面和底表面由与各岛相同类型的高杂质物质制成。

公开(公告)号：US5442561A

公开(公告)日：1995-08-15

申请号：US58175

申请日：1993-05-10

申请人： Masahiro Yoshizawa ,  Tetsuma Sakurai

发明人： Masahiro Yoshizawa ,  Tetsuma Sakurai

IPC分类号： G05B19/418 ,  G06Q10/06 ,  G06F15/46

CPC分类号： G06Q10/06 ,  G05B19/41865 ,  G05B2219/32256 ,  G05B2219/32266 ,  G05B2219/32297 ,  G05B2219/32298 ,  Y02P90/20

摘要： Production schedules are executed for production machines and lots having high importance or priority from among lots being objects of production process by the production machines, and progress of production process is managed by a scheduler based on the production schedules. For those lots whose progresses are delayed, the production schedules are automatically adjusted by the scheduler so that the delays can be eliminated.

摘要翻译： 对于生产机器和生产机器的生产过程对象的生产机器和重要性高的生产计划执行生产计划，并且生产过程的进度由基于生产计划的调度器进行管理。 对于那些进度延迟的批次，生产计划由调度程序自动调整，以便可以消除延迟。