公开(公告)号：US4408386A

公开(公告)日：1983-10-11

申请号：US326751

申请日：1981-12-02

申请人： Tetsuya Takayashiki ,  Taiji Usui ,  Tetsuma Sakurai

发明人： Tetsuya Takayashiki ,  Taiji Usui ,  Tetsuma Sakurai

IPC分类号： H01L21/762 ,  H01L21/76 ,  H01L21/20

CPC分类号： H01L21/76297

摘要： Spaced recesses are formed in a surface of a low impurity concentration P type single-crystal substrate by using a mask. A P type impurity is diffused at a high concentration into an entire surface of the substrate including the recesses to form a P type diffused layer, and an N type layer is epitaxially grown on the P type diffused layer. Then, mask layers are formed on bottom surfaces of the recesses in the epitaxially grown N type layer and this N type layer is anisotropically etched by using the mask layers to form island regions in the recesses. After removing the mask layers, N type diffused layers are formed to cover the island regions. An insulating film (SiO.sub.2) acting to isolate completed transistor elements is formed on the P and N type diffused layers, and a polycrystalline silicon layer acting as a support of a dielectrically isolated integrated circuit device is formed on the insulating film. Then, the rear surface of the single-crystal silicon substrate is ground off to expose the insulating film. MOS or bipolar type transistor elements are formed in the island regions to obtain a dielectrically isolated semiconductor integrated device.

摘要翻译： 通过使用掩模，在低杂质浓度P型单晶衬底的表面上形成间隔开的凹部。 P型杂质以高浓度扩散到包括凹部的基板的整个表面，形成P型扩散层，在P型扩散层上外延生长N型层。 然后，在外延生长的N型层中的凹部的底面上形成掩模层，并且通过使用掩模层对该N型层进行各向异性蚀刻，以在凹部中形成岛状区域。 在去除掩模层之后，形成N型扩散层以覆盖岛状区域。 在P和N型扩散层上形成用于隔离完成的晶体管元件的绝缘膜（SiO 2），并且在绝缘膜上形成用作介电隔离集成电路器件的支撑体的多晶硅层。 然后，将单晶硅衬底的后表面研磨以露出绝缘膜。 在岛区域中形成MOS或双极型晶体管元件，以获得介电隔离的半导体集成器件。