公开(公告)号：US08710659B2

公开(公告)日：2014-04-29

申请号：US13006965

申请日：2011-01-14

申请人： Kei Moriyama ,  Shuichi Tamaki ,  Shuichi Sako ,  Mitsuhide Kori ,  Junji Goto ,  Tatsuya Sawada

发明人： Kei Moriyama ,  Shuichi Tamaki ,  Shuichi Sako ,  Mitsuhide Kori ,  Junji Goto ,  Tatsuya Sawada

IPC分类号： H01L23/532

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48799 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/00014 ,  H01L2224/05155 ,  H01L2224/05124 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2224/48724

摘要： A semiconductor device includes an interlayer dielectric film, a passivation film, made of an insulating material, formed on the interlayer dielectric film, an uppermost wire, made of a material mainly composed of copper, formed between the surface of the interlayer dielectric film and the passivation film, and a wire covering film, made of a material mainly composed of aluminum, interposed between the passivation film and the surface of the uppermost wire for covering the surface of the uppermost wire.

摘要翻译： 半导体器件包括在层间电介质膜上形成的由绝缘材料制成的层间绝缘膜，钝化膜，由主要由铜构成的材料制成的最上面的导线，形成在层间电介质膜的表面和 钝化膜和由主要由铝组成的材料制成的覆盖膜，介于钝化膜和最上面的金属丝的表面之间，用于覆盖最上面的金属丝的表面。

公开(公告)号：US20110186962A1

公开(公告)日：2011-08-04

申请号：US13006965

申请日：2011-01-14

申请人： Kei MORIYAMA ,  Shuichi Tamaki ,  Shuichi Sako ,  Mitsuhide Kori ,  Junji Goto ,  Tatsuya Sawada

发明人： Kei MORIYAMA ,  Shuichi Tamaki ,  Shuichi Sako ,  Mitsuhide Kori ,  Junji Goto ,  Tatsuya Sawada

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L23/525

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48799 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/00014 ,  H01L2224/05155 ,  H01L2224/05124 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2224/48724

摘要： A semiconductor device includes an interlayer dielectric film, a passivation film, made of an insulating material, formed on the interlayer dielectric film, an uppermost wire, made of a material mainly composed of copper, formed between the surface of the interlayer dielectric film and the passivation film, and a wire covering film, made of a material mainly composed of aluminum, interposed between the passivation film and the surface of the uppermost wire for covering the surface of the uppermost wire.

摘要翻译： 半导体器件包括在层间电介质膜上形成的由绝缘材料制成的层间绝缘膜，钝化膜，由主要由铜构成的材料制成的最上面的导线，形成在层间电介质膜的表面和 钝化膜和由主要由铝组成的材料制成的覆盖膜，介于钝化膜和最上面的金属丝的表面之间，用于覆盖最上面的金属丝的表面。